公开(公告)号：US07452488B2

公开(公告)日：2008-11-18

申请号：US11590179

申请日：2006-10-31

申请人： Prabhat Kumar ,  Rong-Chein Richard Wu ,  Shuwei Sun

发明人： Prabhat Kumar ,  Rong-Chein Richard Wu ,  Shuwei Sun

IPC分类号： H01B1/00 ,  H01B1/12

CPC分类号： C04B35/457 ,  C03C17/2453 ,  C03C2217/211 ,  C03C2218/154 ,  C04B2235/3251 ,  C04B2235/3253 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/404 ,  C04B2235/5436 ,  C04B2235/5445 ,  C23C14/086 ,  C23C14/3414 ,  Y10T428/12771 ,  Y10T428/24364

摘要： The present invention is directed to a composition consisting essentially of: a) from about 60 to about 99 mole % of SnO2, and b) from about 1 to about 40 mole % of one or more materials selected from the group consisting of i) Nb2O5, ii) NbO, iii) NbO2, iv) WO2, v) a material selected consisting of a) a mixture of MoO2 and Mo and b) Mo, vi) W, vii) Ta2O5, and viii) mixtures thereof, wherein the mole % s are based on the total product and wherein the sum of components a) and b) is 100. The invention is also directed to the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.

摘要翻译： 本发明涉及一种组合物，其基本上由以下组成：a）约60至约99摩尔％的SnO 2 2，以及b）约1至约40摩尔％的选自下列的一种或多种材料 由以下组成的组：i）Nb 2 O 5，ii）NbO，iii）NbO 2，iv）WO 2， 选自由以下组成的材料：a）MoO 2和Mo的混合物，b）Mo，vi）W，vii）Ta 2 O _{5＆gt;和viii）其混合物，其中摩尔％s基于总产物，其中组分a）和b）的总和为100.本发明还涉及这种组合物的烧结产品 ，由烧结产品制成的溅射靶和由该组合物制成的透明导电膜。}

公开(公告)号：US07368176B2

公开(公告)日：2008-05-06

申请号：US10542945

申请日：2004-01-14

申请人： Richard Wu ,  James Cornie ,  Stephen Cornie ,  Hank Breit ,  Larry Ballard ,  Richard Malen ,  Prabhat Kumar ,  John Shields ,  Robert Desberg

发明人： Richard Wu ,  James Cornie ,  Stephen Cornie ,  Hank Breit ,  Larry Ballard ,  Richard Malen ,  Prabhat Kumar ,  John Shields ,  Robert Desberg

IPC分类号： B32B15/04 ,  B32B15/14 ,  B32B15/20

CPC分类号： C23C2/02 ,  C23C4/02 ,  C23C26/00 ,  C23C28/321 ,  C23C28/322 ,  C23C28/345 ,  C25D5/34 ,  C25D5/54 ,  H05K1/056 ,  Y10T428/12625 ,  Y10T428/12736 ,  Y10T428/24132 ,  Y10T428/249927 ,  Y10T428/30 ,  Y10T428/31678

摘要： The invention relates to a method that involves (a) removing graphite from at least one surface of a metal graphite composite material; (b) chemically cleaning or plasma etching the surface of the metal graphite composite material; (c) applying a metal-containing material to the surface of the chemically cleaned or plasma etched metal graphite composite material, and thereby forming an intermediate layer; (d) applying a metal coating on the intermediate layer, and thereby forming a composite material. The invention also relates to a composite material comprising (a) a metal graphite composite substrate having at least one surface that is substantially free of graphite; (b) a metal-containing intermediate layer located on a surface of the substrate; and (c) a metal coating on the intermediate layer.

摘要翻译： 本发明涉及一种方法，涉及（a）从金属石墨复合材料的至少一个表面去除石墨; （b）化学清洗或等离子体蚀刻金属石墨复合材料的表面; （c）将金属含有材料施加到化学清洁或等离子体蚀刻的金属石墨复合材料的表面上，从而形成中间层; （d）在中间层上涂覆金属涂层，从而形成复合材料。 本发明还涉及一种复合材料，其包括（a）具有至少一个基本上不含石墨的表面的金属石墨复合基材; （b）位于所述基板的表面上的含金属的中间层; 和（c）中间层上的金属涂层。

公开(公告)号：US20080102304A1

公开(公告)日：2008-05-01

申请号：US11742607

申请日：2005-10-27

申请人： Henry F. Breit ,  Rong-Chen R. Wu ,  Prabhat Kumar

发明人： Henry F. Breit ,  Rong-Chen R. Wu ,  Prabhat Kumar

IPC分类号： B32B3/10 ,  H01L23/373

CPC分类号： H01L23/3736 ,  H01L23/3733 ,  H01L23/3735 ,  H01L2924/0002 ,  Y10T428/12361 ,  Y10T428/12486 ,  Y10T428/12528 ,  Y10T428/12535 ,  Y10T428/12806 ,  Y10T428/12861 ,  Y10T428/12903 ,  Y10T428/31678 ,  H01L2924/00

摘要： A substrate for semiconductor and integrated circuit components including: a core plate containing a Group VIB metal from the periodic table of the elements and/or an anisotropic material, having a first major surface and a second major surface and a plurality of openings extending, at least partially, from the first major surface to the second major surface; and a Group IB metal from the periodic table of the elements or other high thermally conductive material filling at least a portion of the space encompassed by at least some of the openings; and optionally, a layer containing a Group IB metal from the periodic table or other high thermally conductive material disposed over at least a portion of the first major surface and at least a portion of the second major surface.

摘要翻译： 一种用于半导体和集成电路部件的衬底，包括：含有来自元件的周期表的VIB族金属和/或各向异性材料的芯板，具有第一主表面和第二主表面，以及多个开口， 最少部分地从第一主表面到第二主表面; 和来自元件周期表的IB族金属或其它高导​​热材料填充由至少一些开口包围的空间的至少一部分; 以及可选地，包含来自周期表的IB族金属或设置在第一主表面的至少一部分和第二主表面的至少一部分上的其它高导热材料的层。

公开(公告)号：US07056470B2

公开(公告)日：2006-06-06

申请号：US10498174

申请日：2003-01-21

申请人： Richard Malen ,  Prabhat Kumar

发明人： Richard Malen ,  Prabhat Kumar

IPC分类号： B22F1/00 ,  B22F3/20

CPC分类号： H01G9/042 ,  B22F2998/00 ,  B22F2998/10 ,  C22C1/045 ,  H01G9/0525 ,  B22F3/18 ,  B22F3/20 ,  B22F5/12 ,  B22F9/023 ,  B22F3/04 ,  B22F3/16

摘要： A capacitor-grade wire made from powder metallurgy containing at least niobium and silicon, wherein the niobium is the highest weight percent metal present in the niobium wire. The wire having a controlled tensile strength at finish diameter exceeds the strength of capacitor-grade wire formed by ingot metallurgy. Also, the powder metallurgy wire hardness exceeds capacitor-grade wire formed from ingot metallurgy with electrical leakage meeting the specifications normally applied to capacitor grade tantalum, niobium or niobium-zirconium lead wire at sinter temperatures of about 1150° C. and above.

公开(公告)号：US20050118052A1

公开(公告)日：2005-06-02

申请号：US10502281

申请日：2003-01-21

申请人： Paul Aimone ,  Howard Goldberg ,  Richard Malen ,  Thomas Morse ,  Prabhat Kumar ,  Henning Uhlenhut

发明人： Paul Aimone ,  Howard Goldberg ,  Richard Malen ,  Thomas Morse ,  Prabhat Kumar ,  Henning Uhlenhut

IPC分类号： B22F3/10 ,  B22F1/00 ,  B22F3/20 ,  B22F3/24 ,  C22C32/00 ,  B22F1/02

CPC分类号： B22F3/1003 ,  B22F1/0088 ,  B22F2003/1032 ,  B22F2005/002 ,  B22F2998/00 ,  B22F2998/10 ,  C22C32/0031 ,  B22F5/007 ,  B22F1/0003 ,  B22F3/15 ,  B22F3/16 ,  B22F3/20

摘要： A powder metal (P/M) mill product and the method of fabrication such product made out of low oxygen (

摘要翻译： 粉末金属（P / M）研磨产品和使用氧化物添加剂（例如MgO，SiO 2）的低氧（<400ppm）难熔金属或其合金制成的产品的方法 >和Y 2 O 3 3），用于共同制造以实现在高温应用中所需的难熔金属晶粒尺寸稳定性。 一种这样的产品是具有小颗粒尺寸的片状物，其含有氧化物颗粒作为晶粒尺寸稳定剂。 该产品具有良好的机械性能，在磨机产品中的粉末的难熔金属纤维衍生物中的低氧含量，如果可用作大片（侧向尺寸）。 金属粉末通过不同的方法固结到片材棒，其可以重50磅或更多。

公开(公告)号：US06731495B2

公开(公告)日：2004-05-04

申请号：US10285748

申请日：2002-11-01

申请人： Prabhat Kumar ,  Henning Uhlenhut

发明人： Prabhat Kumar ,  Henning Uhlenhut

IPC分类号： H01G420

CPC分类号： H01G9/15 ,  H01G4/10 ,  H01G11/48 ,  H05K1/162 ,  H05K2201/0179 ,  H05K2201/0329 ,  H05K2201/09763 ,  Y02E60/13

摘要： The invention relates to a thin film capacitor containing (a) a substrate, (b) a first polymeric film containing an electrically conductive polymer located on the substrate, (c) a pentoxide layer selected from the group consisting of tantalum pentoxide, or niobium pentoxide, and mixtures thereof, (d) a second polymeric film containing an electrically conductive polymer located on the pentoxide layer.

摘要翻译： 本发明涉及一种薄膜电容器，其包含（a）基底，（b）含有位于基底上的导电聚合物的第一聚合物膜，（c）选自五氧化二钽或五氧化二铌的五氧化物层 ，及其混合物，（d）含有位于五氧化物层上的导电聚合物的第二聚合物膜。

公开(公告)号：US06358625B1

公开(公告)日：2002-03-19

申请号：US09567677

申请日：2000-05-09

申请人： Prabhat Kumar ,  Howard V. Goldberg ,  Thomas Ryan

发明人： Prabhat Kumar ,  Howard V. Goldberg ,  Thomas Ryan

IPC分类号： B22F708

CPC分类号： H01G9/012 ,  B22F7/08 ,  C22B34/24 ,  H01G9/052 ,  Y10T428/12063 ,  Y10T428/1259 ,  Y10T428/12819

摘要： Refractory metal articles having hither than normal impurity levels of concentrations of additive species near the surface that promote chemically enhanced sintering without any adverse effect on function properties, including, among others, tantalum or niobium lead wires that form assemblies useful as electrolytic capacitor anodes and the like, as made by surface oxidation of the wire, embedding a wire end in a loose mass of the powder and sintering to producing assemblies of enhanced structural integrity and affording stable electrical characteristics of electrical devices including such assemblies.

摘要翻译： 耐火金属制品具有不止于表面附近的添加剂物质浓度的正常杂质水平，其促进化学增强烧结而对功能性能没有任何不利影响，包括形成用作电解电容器阳极的组件的钽或铌引线，以及 如通过线的表面氧化制成的，将线端嵌入松散的粉末块中并烧结以产生增强的结构完整性的组件，并提供包括这种组件的电气装置的稳定的电特性。

公开(公告)号：US5245514A

公开(公告)日：1993-09-14

申请号：US888670

申请日：1992-05-27

申请人： James A. Fife ,  David A. Knudson ,  Prabhat Kumar ,  Viren Pathare

发明人： James A. Fife ,  David A. Knudson ,  Prabhat Kumar ,  Viren Pathare

IPC分类号： B21C23/14 ,  B21C37/04 ,  C22C1/00 ,  C22C1/08 ,  C25D11/34 ,  H01G9/00 ,  H01G9/04 ,  H01G9/042 ,  H01G9/048

CPC分类号： H01G9/042 ,  B21C37/047

摘要： Tantalum electrode material is produced which has extremely low tortuosity, exceptionally low ESL and ESR, potentially extended high frequency performance, very high volumetric efficiency, and reduced tantalum consumption per electrode. The electrode material is characterized by having a cross-section composed of plates of tantalum separated by spaced gaps resulting in a highly dense (volumetric efficiency) electrode. The plates are electrically interconnected which also adds to the structural stability of the article. This is made possible by being able to carefully control the geometry of the tantalum material during processing. A method for producing such material includes extruding a billet filled with a (preferentially geometrically uniform) mixture of rods of tantalum and an extrudable metal. When the billet has been sufficiently reduced in size and severed, the extrudable metal is removed by selectively dissolving with acid. In addition to the above advantages, the resulting article is particularly adapted for use in super-miniaturization applications.

摘要翻译： 生产的钽电极材料具有非常低的曲折度，特别低的ESL和ESR，可能延长高频性能，非常高的体积效率和减少每个电极的钽消耗量。 电极材料的特征在于具有由间隔开的间隔开的由钽板隔开的横截面，导致高密度（体积效率）电极。 这些板是电互连的，这也增加了制品的结构稳定性。 这可以通过在加工过程中仔细地控制钽材料的几何形状而实现。 制造这种材料的方法包括挤出填充有（优选几何均匀的）钽棒和可挤出金属的混合物的坯料。 当坯料的尺寸已经被充分地减小并被切断时，可选择地用酸溶解去除可挤压的金属。 除了上述优点之外，所得到的制品特别适用于超小型化应用。