公开(公告)号：US10453817B1

公开(公告)日：2019-10-22

申请号：US16011283

申请日：2018-06-18

Applicant: Texas Instruments Incorporated

Inventor： Nazila Dadvand ,  Christopher Daniel Manack ,  Salvatore Frank Pavone

IPC: H01L23/00 ,  H01L23/495 ,  B23K1/00 ,  C25D7/12 ,  C25D3/22 ,  B23K101/36 ,  C25D3/12

Abstract: A microelectronic device has bump bond structures on input/output (I/O) pads. The bump bond structures include copper-containing pillars, a barrier layer including cobalt and zinc on the copper-containing pillars, and tin-containing solder on the barrier layer. The barrier layer includes 0.1 weight percent to 50 weight percent cobalt and an amount of zinc equivalent to a layer of pure zinc 0.05 microns to 0.5 microns thick. A lead frame has a copper-containing member with a similar barrier layer in an area for a solder joint. Methods of forming the microelectronic device are disclosed.

公开(公告)号：US10424552B2

公开(公告)日：2019-09-24

申请号：US15954254

申请日：2018-04-16

Applicant: Texas Instruments Incorporated

Inventor： Nazila Dadvand ,  Salvatore Frank Pavone ,  Christopher Daniel Manack

IPC: H01L23/00 ,  C25D5/12

Abstract: A microelectronic device includes a reflow structure. The reflow structure has a copper-containing member and a solder member, and a barrier layer between them. The barrier layer has metal grains, with a diffusion barrier filler between the metal grains. The metal grains include at least a first metal and a second metal, each selected from nickel, cobalt, lanthanum, and cerium, with each having a concentration in the metal grains of at least 10 weight percent. The diffusion barrier filler includes at least a third metal, selected from tungsten and molybdenum. A combined concentration of tungsten and molybdenum in the diffusion barrier filler is higher than in the metal grains to provide a desired resistance to diffusion of copper. The barrier layer includes 2 weight percent to 15 weight percent of the combined concentration of tungsten, and molybdenum. A bump bond structure and a lead frame package are disclosed.

公开(公告)号：US20190088389A1

公开(公告)日：2019-03-21

申请号：US15984346

申请日：2018-05-19

Applicant: Texas Instruments Incorporated

Inventor： Nazila Dadvand ,  Christopher Daniel Manack ,  Salvatore Frank Pavone

IPC: H01B13/00 ,  H01B1/02 ,  H01L23/00

Abstract: A nanostructure barrier for copper wire bonding includes metal grains and inter-grain metal between the metal grains. The nanostructure barrier includes a first metal selected from nickel or cobalt, and a second metal selected from tungsten or molybdenum. A concentration of the second metal is higher in the inter-grain metal than in the metal grains. The nanostructure barrier may be on a copper core wire to provide a coated bond wire. The nanostructure barrier may be on a bond pad to form a coated bond pad. A method of plating the nanostructure barrier using reverse pulse plating is disclosed. A wire bonding method using the coated bond wire is disclosed.