公开(公告)号：US20110173460A1

公开(公告)日：2011-07-14

申请号：US13119524

申请日：2009-10-07

申请人： Takayuki Ito ,  Hideki Matsushima ,  Hisashi Takayama ,  Tomoyuki Haga

发明人： Takayuki Ito ,  Hideki Matsushima ,  Hisashi Takayama ,  Tomoyuki Haga

IPC分类号： G06F12/14

CPC分类号： H04L9/0836 ,  H04L9/0894 ,  H04L2209/60

摘要： The aim is to provide high-speed data synchronization. To achieve the aim, in data synchronization using a plurality of key databases with respect to same data pieces, a key for one key database, which has been determined in advance, is used for updating the data piece managed under the other key database. This reduces the number of key decryption operations. A key management software 116, which manages a key database A120 and a key database B121 each having a tree structure, determines whether to perform data synchronization when requested by an upper-level application to perform data encryption, and performs synchronization of encrypted data by using a key of the other database which has been determined in advance. This reduces the number of times the encrypted key is loaded onto a cryptographic processing unit 114, and realizes high-speed cryptographic processing on data.

摘要翻译： 目的是提供高速数据同步。 为了实现上述目的，在使用多个密钥数据库的数据同步中，使用已经被预先确定的一个密钥数据库的密钥来更新在另一密钥数据库下管理的数据片段。 这减少了密钥解密操作的数量。 管理密钥数据库A120的密钥管理软件116和具有树状结构的密钥数据库B121，在上层应用程序请求时进行数据同步，进行数据加密，通过使用加密数据进行同步， 预先确定的其他数据库的一个关键字。 这减少了加密密钥加载到加密处理单元114上的次数，并实现对数据的高速加密处理。

公开(公告)号：US07907867B2

公开(公告)日：2011-03-15

申请号：US11418215

申请日：2006-05-05

申请人： Fuminori Moro ,  Shoichi Yoshikawa ,  Toshiyuki Sakai ,  Hiroshi Ibaraki ,  Takayuki Ito

发明人： Fuminori Moro ,  Shoichi Yoshikawa ,  Toshiyuki Sakai ,  Hiroshi Ibaraki ,  Takayuki Ito

IPC分类号： G03G15/16

CPC分类号： G03G15/161 ,  G03G2215/1661

摘要： There is provided a cleaning device capable of maintaining a sufficient cleaning effect by preventing creep deformation of a cleaning member. The cleaning device of the present invention for cleaning a transfer body in an image forming apparatus includes a first cleaning member whose top end is brought into pressure contact with the transfer body, and a second cleaning member which is placed downstream from the first cleaning member with respect to a moving direction of the transfer body and whose top end is brought into pressure contact with the transfer body, wherein the second cleaning member is provided rotatably with respect to the first cleaning member.

摘要翻译： 提供了一种能够通过防止清洁构件的蠕变变形来保持足够的清洁效果的清洁装置。 用于清洁图像形成装置中的转印体的本发明的清洁装置包括：第一清洁部件，其顶端与转印体压力接触;以及第二清洁部件，其设置在第一清洁部件的下游， 相对于转印体的移动方向，其顶端与转印体压力接触，其中第二清洁部件相对于第一清洁部件可旋转地设置。

公开(公告)号：US20100325628A1

公开(公告)日：2010-12-23

申请号：US12866311

申请日：2009-02-23

申请人： Tomoyuki Haga ,  Hideki Matsushima ,  Hisashi Takayama ,  Takayuki Ito ,  Manabu Maeda

发明人： Tomoyuki Haga ,  Hideki Matsushima ,  Hisashi Takayama ,  Takayuki Ito ,  Manabu Maeda

IPC分类号： G06F9/455

CPC分类号： G06F21/575

摘要： A terminal having a plurality of virtual machines in one-to-one correspondence with a plurality of stakeholders is enabled to activate in compliance with the trust dependency relation among the virtual machines and a virtual machine monitor. The terminal includes: the plurality of virtual machines in one-to-one correspondence with the plurality of stakeholders; a plurality of tamper-resistant modules in one-to-one correspondence with the virtual machines, and a management unit controlling the virtual machines and the tamper-resistant modules in mutually related manner. Each virtual machine securely boots with reference to a certificate having a trust dependency with one or other virtual machines.

摘要翻译： 具有与多个利益相关者一一对应的多个虚拟机的终端能够根据虚拟机和虚拟机监视器之间的信任依赖关系来激活。 终端包括：多个虚拟机与多个利益相关者一一对应; 与虚拟机一一对应的多个防篡改模块，以及以相互关联的方式控制虚拟机和防篡改模块的管理单元。 参考具有与一个或其他虚拟机的信任依赖关系的证书，每个虚拟机都将安​​全启动。

公开(公告)号：US20100318781A1

公开(公告)日：2010-12-16

申请号：US12864589

申请日：2009-01-29

申请人： Kenneth Alexander Nicolson ,  Hideki Matsushima ,  Hisashi Takayama ,  Takayuki Ito ,  Tomoyuki Haga

发明人： Kenneth Alexander Nicolson ,  Hideki Matsushima ,  Hisashi Takayama ,  Takayuki Ito ,  Tomoyuki Haga

IPC分类号： G06F21/00 ,  G06F9/00

CPC分类号： G06F21/575

摘要： A method to allow a device to boot in a secure fashion, even though some of the components within the secure device's firmware may not be present, not correctly authorized, or not correctly operating.

摘要翻译： 即使安全设备的固件中的某些组件可能不存在，未正确授权或不正确操作，允许设备以安全方式引导的方法。

公开(公告)号：US07849331B2

公开(公告)日：2010-12-07

申请号：US12081889

申请日：2008-04-23

申请人： Makoto Fujiwara ,  Yusuke Nemoto ,  Junichi Yasui ,  Takuji Maeda ,  Takayuki Ito ,  Yasushi Yamada ,  Shinji Inoue

发明人： Makoto Fujiwara ,  Yusuke Nemoto ,  Junichi Yasui ,  Takuji Maeda ,  Takayuki Ito ,  Yasushi Yamada ,  Shinji Inoue

IPC分类号： G06F21/00

CPC分类号： G06F21/123 ,  G06F21/572 ,  G06F21/72

摘要： A system including a secure LSI 1 establishes a communication path to/from a server 3 (UD1), and receives a common key-encrypted program generated by encryption with a common key and transmitted from the server 3 (UD6 and UD7). The received common key-encrypted program is decrypted to generate a raw program, and the raw program is re-encrypted with an inherent key to newly generate an inherent key-encrypted program, which is stored in an external memory.

摘要翻译： 包括安全LSI1的系统建立到服务器3（UD1）的通信路径，并且从服务器3（UD6和UD7）接收通过公共密钥通过加密生成的公共密钥加密程序。 对所接收的公用密钥加密程序进行解密以生成原始程序，并且用固有密钥重新加密原始程序，以新生成存储在外部存储器中的固有密钥加密程序。

公开(公告)号：US07781848B2

公开(公告)日：2010-08-24

申请号：US11704924

申请日：2007-02-12

申请人： Takayuki Ito ,  Kyoichi Suguro ,  Kouji Matsuo

发明人： Takayuki Ito ,  Kyoichi Suguro ,  Kouji Matsuo

IPC分类号： H01L29/78

CPC分类号： H01L21/823857 ,  H01L21/823814 ,  H01L21/823842

摘要： A semiconductor device includes a semiconductor region, a source region, a drain region, a source extension region a drain extension region, a first gate insulation film, a second gate insulation film, and a gate electrode. The source region, drain region, source extension region and drain extension region are formed in a surface portion of the semiconductor region. The first gate insulation film is formed on the semiconductor region between the source extension region and the drain extension region. The first gate insulation film is formed of a silicon oxide film or a silicon oxynitride film having a nitrogen concentration of 15 atomic % or less. The second gate insulation film is formed on the first gate insulation film and contains nitrogen at a concentration of between 20 atomic % and 57 atomic %. The gate electrode is formed on the second gate insulation film.

摘要翻译： 半导体器件包括半导体区域，源极区域，漏极区域，源极延伸区域，漏极延伸区域，第一栅极绝缘膜，第二栅极绝缘膜和栅极电极。 源极区域，漏极区域，源极延伸区域和漏极延伸区域形成在半导体区域的表面部分中。 第一栅极绝缘膜形成在源极延伸区域和漏极延伸区域之间的半导体区域上。 第一栅极绝缘膜由氮浓度为15原子％以下的氧化硅膜或氮氧化硅膜形成。 第二栅极绝缘膜形成在第一栅极绝缘膜上，并且含有浓度为20原子％至57原子％之间的氮。 栅电极形成在第二栅绝缘膜上。

公开(公告)号：US20100193874A1

公开(公告)日：2010-08-05

申请号：US12757658

申请日：2010-04-09

申请人： Takayuki Ito ,  Kyoichi Suguro ,  Kouji Matsuo

发明人： Takayuki Ito ,  Kyoichi Suguro ,  Kouji Matsuo

IPC分类号： H01L27/092

CPC分类号： H01L21/823857 ,  H01L21/823814 ,  H01L21/823842

摘要： A semiconductor device includes a semiconductor region, a source region, a drain region, a source extension region a drain extension region, a first gate insulation film, a second gate insulation film, and a gate electrode. The source region, drain region, source extension region and drain extension region are formed in a surface portion of the semiconductor region. The first gate insulation film is formed on the semiconductor region between the source extension region and the drain extension region. The first gate insulation film is formed of a silicon oxide film or a silicon oxynitride film having a nitrogen concentration of 15 atomic % or less. The second gate insulation film is formed on the first gate insulation film and contains nitrogen at a concentration of between 20 atomic % and 57 atomic %. The gate electrode is formed on the second gate insulation film.

摘要翻译： 半导体器件包括半导体区域，源极区域，漏极区域，源极延伸区域，漏极延伸区域，第一栅极绝缘膜，第二栅极绝缘膜和栅极电极。 源极区域，漏极区域，源极延伸区域和漏极延伸区域形成在半导体区域的表面部分中。 第一栅极绝缘膜形成在源极延伸区域和漏极延伸区域之间的半导体区域上。 第一栅极绝缘膜由氮浓度为15原子％以下的氧化硅膜或氮氧化硅膜形成。 第二栅极绝缘膜形成在第一栅极绝缘膜上，并且含有浓度为20原子％至57原子％之间的氮。 栅电极形成在第二栅绝缘膜上。

公开(公告)号：US07746207B2

公开(公告)日：2010-06-29

申请号：US10571771

申请日：2004-11-05

申请人： Mitsuhiro Yamashita ,  Takashi Nagasaka ,  Hideki Miura ,  Yasuhiro Matsukawa ,  Kazuo Sato ,  Akira Sato ,  Hironori Sato ,  Takayuki Ito ,  Yasuhiko Kitajima

发明人： Mitsuhiro Yamashita ,  Takashi Nagasaka ,  Hideki Miura ,  Yasuhiro Matsukawa ,  Kazuo Sato ,  Akira Sato ,  Hironori Sato ,  Takayuki Ito ,  Yasuhiko Kitajima

IPC分类号： H01F5/00

CPC分类号： H01F27/292 ,  H01F17/045 ,  H01F27/027 ,  H01F27/33 ,  H01F41/082

摘要： A coil apparatus having a divided winding conformation and a manufacturing method of the coil apparatus which can prevent a winding from collapsing while achieving a reduction in size of a core and simplification of a structure. A coil apparatus includes a ferrite core and a coil provided around the core. The coil includes at least a first coil portion and a second coil portion, and a boundary end surface of the first coil portion on the second coil portion side is inclined in such a manner that its inner peripheral side is closer to the second coil portion than its outer peripheral side. Further, a boundary end surface of the second coil portion on the first coil portion side is inclined in such a manner that its outer peripheral side is closer to the first coil portion than its inner peripheral side.

摘要翻译： 具有分割绕组结构的线圈装置和线圈装置的制造方法，其可以防止绕组塌陷同时实现芯的尺寸的减小并且简化结构。 线圈装置包括铁氧体磁芯和设置在磁芯周围的线圈。 线圈至少包括第一线圈部分和第二线圈部分，并且第二线圈部分侧的第一线圈部分的边界端面以其内周侧比第二线圈部分更靠近第二线圈部分的方式倾斜， 其外围边。 此外，第一线圈部分侧的第二线圈部分的边界端面以其外周侧比其内周侧更靠近第一线圈部分的方式倾斜。

公开(公告)号：US07685435B2

公开(公告)日：2010-03-23

申请号：US10624481

申请日：2003-07-23

申请人： Makoto Fujiwara ,  Yusuke Nemoto ,  Junichi Yasui ,  Takuji Maeda ,  Takayuki Ito ,  Yasushi Yamada ,  Shinji Inoue

发明人： Makoto Fujiwara ,  Yusuke Nemoto ,  Junichi Yasui ,  Takuji Maeda ,  Takayuki Ito ,  Yasushi Yamada ,  Shinji Inoue

IPC分类号： G06F11/30

CPC分类号： G06F21/72 ,  G06F8/60 ,  G06F21/575 ,  G06F2221/2105

摘要： An development environment of a high security level is provided for a key-installed system. Development of a program for a system having an LSI device which includes a secure memory is performed by providing another LSI device having the same structure and setting the provided LSI device to a development mode which is different from a product operation mode. Alternatively, the provided LSI device is set to an administrator mode to perform development and encryption of a key-generation program. The LSI device is set to a key-generation mode to execute the encrypted key-generation program, thereby generating various keys.

摘要翻译： 为安装密钥的系统提供了高安全级别的开发环境。 通过提供具有相同结构的另一LSI器件和将所提供的LSI器件设置为与产品操作模式不同的开发模式来执行具有包括安全存储器的LSI器件的系统的程序的开发。 或者，将所提供的LSI设备设置为管理员模式，以执行密钥生成程序的开发和加密。 LSI设备被设置为执行加密密钥生成程序的密钥生成模式，从而生成各种密钥。

公开(公告)号：US07501332B2

公开(公告)日：2009-03-10

申请号：US11097259

申请日：2005-04-04

申请人： Takayuki Ito ,  Kyoichi Suguro

发明人： Takayuki Ito ,  Kyoichi Suguro

IPC分类号： H01L21/425

CPC分类号： H01L21/2236 ,  H01L21/823814 ,  Y10S438/918 ,  Y10S438/964

摘要： A doping method includes implanting first impurity ions into a semiconductor substrate, so as to form a damaged region in the vicinity of a surface of the semiconductor substrate, the first impurity ions not contributing to electric conductivity; implanting second impurity ions into the semiconductor substrate through the damaged region, the second impurity ions having an atomic weight larger than the first impurity ions and contributing to the electric conductivity; and heating the surface of the semiconductor substrate with a light having a pulse width of about 0.1 ms to about 100 ms, so as to activate the second impurity ions.

摘要翻译： 掺杂方法包括将第一杂质离子注入到半导体衬底中，以在半导体衬底的表面附近形成损伤区域，不对导电性有贡献的第一杂质离子; 通过损伤区域将第二杂质离子注入到半导体衬底中，第二杂质离子的原子量大于第一杂质离子并有助于导电性; 并用脉冲宽度为约0.1ms至约100ms的光来加热半导体衬底的表面，以激活第二杂质离子。