公开(公告)号：US4366568A

公开(公告)日：1982-12-28

申请号：US217652

申请日：1980-12-18

申请人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada

发明人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada

IPC分类号： H01S5/223 ,  H01S3/19

CPC分类号： H01S5/223

摘要： In a semiconductor laser, an n-type first clad layer, an undoped active layer, and a p-type second clad layer are formed on an n-type semiconductor substrate by liquid phase sequential epitaxial growth. The second clad layer is photo-etched to form a stripe-shaped thicker part at the center and thinner parts on both sides thereof. Thereafter, an n-type isolation layer is further epitaxially formed, and a Zn impurity is diffused in a thinner part of the isolation layer in a stripe-shaped pattern at the position above the thicker part, thereby forming a p+-type conduction region in the central part of the thinner part of the n-type isolation layer. By forming the stripe-shaped ridge part in the clad layer, light lased in the active layer is effectively confined in a stripe-shaped part thereof which is underneath the ridge part. Therefore, a stable transverse mode of lasing results. By forming the thicker part, the n-type isolation layer, very closely above the thinner side parts of the active layer, injected current is effectively confined to the lasing region which is underneath the ridge part. Therefore, the threshold current is decreased.

摘要翻译： 在半导体激光器中，通过液相顺序外延生长在n型半导体衬底上形成n型第一覆盖层，未掺杂有源层和p型第二覆盖层。 第二覆盖层被光蚀刻以在中心形成条状较厚的部分，并在其两侧形成更薄的部分。 此后，进一步外延形成n型隔离层，并且在较厚部分上方的位置处，在杂质图案中的Zn隔离层的较薄部分中扩散Zn杂质，形成p +型导电区​​域 n型隔离层较薄部分的中心部分。 通过在包覆层中形成条状的脊部，在活性层中照射的光被有效地限制在其脊部下方的条状部分中。 因此，可以获得稳定的激光横向模式。 通过形成较厚的部分，非常接近活性层较薄侧面部分的n型隔离层注入电流有效地限制在脊部下方的激光区域。 因此，阈值电流降低。

公开(公告)号：US4365336A

公开(公告)日：1982-12-21

申请号：US208021

申请日：1980-11-18

申请人： Takashi Sugino ,  Hirokazu Shimizu ,  Masaru Wada ,  Kunio Itoh

发明人： Takashi Sugino ,  Hirokazu Shimizu ,  Masaru Wada ,  Kunio Itoh

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2238

摘要： A terraced-substrate structure semiconductor laser in accordance with the present invention comprises:a terrace-shaped semiconductor substrate having an upper face, a lower face and a step part disposed between said upper face and said lower face,a clad layer formed on said terrace shaped semiconductor substrate and including at least an upper part formed on said upper face and a step part having a triangular section and formed at a corner defined by said lower face and said step part, said step part being thicker than said upper part,an active layer formed on said first clad layer and including a horizontal upper part formed on said upper part of said first clad layer and an oblique lasing region formed oblique on said step part of said first clad layer, but excluding a lower horizontal part, hitherto formed on said lower face,a current injection electrode having a stripe shaped injection face disposed above said lasing region,the improvement is that said active layer is terminated substantially at a lower end of said oblique lasing region by etching away said lower horizontal part of the active layer and said clad layer at the part on said lower face, thereby limiting a path of injected current to enter only in said lasing region.

摘要翻译： 根据本发明的梯形半导体衬底结构半导体激光器包括：具有上表面，下表面和设置在所述上​​表面和所述下表面之间的台阶部分的平台状半导体衬底，形成在所述露台上的覆层 并且至少包括形成在所述上表面上的上部和具有三角形截面的阶梯部，并形成在由所述下表面和所述台阶部限定的拐角处，所述台阶部分比所述上部部分厚，活动部件 层，形成在所述第一包层上，并且包括形成在所述第一包层的所述上部上的水平上部部分和在所述第一包层的所述台阶部分上倾斜形成的倾斜激光区域，但不包括以前形成的下部水平部分 所述下表面，具有设置在所述激光区域上方的条形注入面的电流注入电极，改善的是所述活性层是终端 基本上在所述斜激光区域的下端，通过在所述下表面的部分刻蚀掉有源层和所述覆盖层的所述下水平部分，从而限制注入电流的路径仅在所述激光区域中进入。

公开(公告)号：US4329661A

公开(公告)日：1982-05-11

申请号：US128313

申请日：1980-03-07

申请人： Takashi Sugino ,  Kunio Ito ,  Masaru Wada ,  Hirokazu Shimizu

发明人： Takashi Sugino ,  Kunio Ito ,  Masaru Wada ,  Hirokazu Shimizu

IPC分类号： H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2238

摘要： A semiconductor laser is comprised of a terrace shaped substrate andepitaxially grown layers including an active layer on the substrate. The active layer has an oblique active region formed between an upper horizontal part on the thicker part of the substrate and a lower horizontal part on the thinner part of the substrate. The laser is characterized by a current limiting layer of high resistivity or a layer forming a current limiting p-n junction with the substrate between the lower horizontal part of the active layer and the thinner part of the substrate, thereby limiting the path of the current from the active layer to the substrate almost horizontally through the vertical step wall part between the thinner part and the thicker part.

摘要翻译： 半导体激光器由平台形状的衬底和在衬底上包括有源层的外延生长层组成。 有源层具有形成在基板的较厚部分上的上部水平部分和基板的较薄部分上的下部水平部分之间的倾斜有源区域。 该激光器的特征在于具有高电阻率的限流层或在有源层的下部水平部分与衬底的较薄部分之间形成与衬底的限流pn结的层，由此限制电流从 有源层几乎水平地穿过基板之间的较薄部分与较厚部分之间的垂直台阶壁部分。