公开(公告)号：US4651322A

公开(公告)日：1987-03-17

申请号：US754195

申请日：1985-07-10

申请人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada ,  Iwao Teramoto ,  Kazuo Fujimoto

发明人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada ,  Iwao Teramoto ,  Kazuo Fujimoto

IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2238 ,  H01S5/028

摘要： In a laser of such type that the distribution of the effective refractive index varies in a direction which is along the face of its active layer and perpendicular to the direction of the laser light transmission, thereby defining the active region to be between a pair of refractive index changing zones, the refractive indexes of a pair of end surfaces of a laser resonator (i.e. the active region) is made smaller than the intrinsic refractive indexes of the cleavage face of the active layer.

摘要翻译： 在这种类型的激光器中，有效折射率的分布沿着其有源层的面并且垂直于激光传输的方向的方向变化，从而将有源区域限定在一对折射率 折射率变化区域，使激光谐振器（即有源区域）的一对端面的折射率小于有源层的解理面的固有折射率。

公开(公告)号：US4488306A

公开(公告)日：1984-12-11

申请号：US358104

申请日：1982-03-15

申请人： Takashi Sugino ,  Kunio Itoh ,  Masaru Wada ,  Hirokazu Shimizu ,  Hiroyuki Mizuno ,  Kazuo Fujimoto

发明人： Takashi Sugino ,  Kunio Itoh ,  Masaru Wada ,  Hirokazu Shimizu ,  Hiroyuki Mizuno ,  Kazuo Fujimoto

IPC分类号： H01L21/208 ,  H01S5/00 ,  H01S5/024 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2238 ,  H01S5/024 ,  H01S5/02272 ,  H01S5/3203

摘要： In a semiconductor laser of terraced substrate type, comprising on a terraced substrate (11) of n-GaAs substrate, a first clad layer (12) of n-GaAlAs, an active layer (13) of non-doped GaAlAs, a second clad layer (14) of p-GaAlAs and a current limiting layer (15) of n-GaAs, and further thereon a thick overriding layer (19) of n-GaAlAs with strip shaped opening (191), are epitaxially formed, and a current injection layer (16) is formed by Zn diffusion through the opening (191) in a manner one corner (161) of the injection front penetrate the current limiting layer (15) and reaches the second clad layer (14). By means of thick overriding layer (19), shortcircuiting between the active layer (13) and a p-side electrode (7) is prevented.

摘要翻译： 在梯形衬底类型的半导体激光器中，包括在n-GaAs衬底的梯形衬底（11）上，n-GaAlAs的第一覆盖层（12），非掺杂GaAlAs的有源层（13），第二覆层 p-GaAlAs的层（14）和n-GaAs的限流层（15），并且还具有带条形开口（191）的n-GaAlAs厚的覆盖层（19），外延形成电流 注入层（16）以注入前沿的一个角部（161）穿过开口（191）的Zn扩散形成，穿过限流层（15）并到达第二覆层（14）。 通过厚覆盖层（19），防止有源层（13）和p侧电极（7）之间的短路。

公开(公告)号：US4377865A

公开(公告)日：1983-03-22

申请号：US218442

申请日：1980-12-19

申请人： Takashi Sugino ,  Masaru Wada ,  Hirokazu Shimizu ,  Kunio Itoh

发明人： Takashi Sugino ,  Masaru Wada ,  Hirokazu Shimizu ,  Kunio Itoh

IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2232 ,  H01S5/2059 ,  H01S5/2234 ,  H01S5/2235

摘要： On an n-type semiconductor substrate having a ridge part of stripe-shaped pattern, the following layers are formed by liquid phase sequential epitaxial growth: an undoped active layer; a p-type clad layer; and an n-type isolation layer. Thereafter, a Cd impurity is diffused in the isolation layer in a stripe-shaped pattern at the position above the ridge part, thereby forming a p+-type conduction region in the central part of the isolation layer. By forming the stripe-shaped ridge part on the substrate overriding the active layer, the injected current is effectively confined to the lasing region which is the thinner part of the active layer and is on the ridge part. Therefore the threshold current is decreased. Accordingly, the light lased in the active layer is effectively confined in a stripe-shaped lasing region thereof, and a stable transverse mode of lasing is obtainable.

摘要翻译： 在具有条状图案的脊部的n型半导体衬底上，通过液相顺序外延生长形成以下层：未掺杂的有源层; p型覆层; 和n型隔离层。 此后，Cd隔离层在脊部上方的位置以条状图案扩散到隔离层，由此在隔离层的中央部形成p +型导电区​​域。 通过在衬底上形成条状脊部来覆盖有源层，注入的电流被有效地限制在作为有源层的较薄部分并且在脊部上的激光区域。 因此，阈值电流降低。 因此，在有源层中照射的光被有效地限制在条状的激光区域中，并且可以获得稳定的横模激光。

公开(公告)号：US4546478A

公开(公告)日：1985-10-08

申请号：US614390

申请日：1984-05-25

申请人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada

发明人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada

IPC分类号： H01S5/00 ,  H01L21/60 ,  H01S5/02 ,  H01S3/19

CPC分类号： H01S5/02252 ,  H01L2224/32057 ,  H01L2224/83385 ,  H01L2224/83801 ,  H01L24/31 ,  H01L24/83 ,  H01L2924/01014 ,  H01L2924/12042

摘要： A mounting of semiconductor laser chip on a heat sink or metal mount is improved so as to enable high accuracy of position and direction. A heat sink or metal mount, on which a semiconductor laser chip is mounted, comprises two parts, namely a main mount or larger portion and a sub-mount or smaller portion. The semiconductor laser chip is soldered by a solder layer on the sub-mount utilizing a microscope so as to assure an accurate position and an accurate direction with respect to the sub-mount. Then, the sub-mount is soldered on the main mount by a solder layer with an accurate relation both in position and direction by engaging a linear ridge as a first engaging means provided on the upper face of the main mount with a straight groove and a rear end face as a second engaging means, or by engaging a square recess as a first engaging means and the square bottom of the sub-mount as a second engaging means with each other. As a result of the above-mentioned structure, accurate position and direction of the semiconductor laser chip with respect to the mount is easily obtainable with a high yield.

摘要翻译： 提高半导体激光芯片在散热片或金属安装座上的安装，以实现高精度的位置和方向。 安装有半导体激光芯片的散热器或金属安装件包括两部分，即主安装件或更大部分和副安装件或更小部件。 利用显微镜将半导体激光芯片通过焊接层焊接在子座上，以确保相对于子安装座的精确位置和准确的方向。 然后，通过将位于主要安装座的上表面上设置的第一接合装置的直线状脊线与直槽相啮合，通过焊接层将焊接层焊接在主安装座上，焊接层的位置和方向都精确， 后端面作为第二接合装置，或者通过将作为第一接合装置的方形凹槽和副安装座的方形底部彼此接合作为第二接合装置。 作为上述结构的结果，可以容易地以高产率获得半导体激光器芯片相对于安装座的精确位置和方向。

公开(公告)号：US4371967A

公开(公告)日：1983-02-01

申请号：US215665

申请日：1980-12-12

申请人： Masaru Wada ,  Hirokazu Shimizu ,  Takashi Sugino ,  Kunio Itoh

发明人： Masaru Wada ,  Hirokazu Shimizu ,  Takashi Sugino ,  Kunio Itoh

IPC分类号： H01S5/00 ,  H01S5/30 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/305 ,  H01S5/32308 ,  Y10S438/916

摘要： In a semiconductor laser which has epitaxial layers including an active layer on a semiconductor substrate, a buffer layer is formed neighboring the active layer, in order to prevent undesirable diffusion of a highly diffusing dopant (Zn) into the active layer from an adjacent layer such as the second clad layer. The buffer layer has the same conductivity as that of the adjacent layer, has a broader energy gap than the active layer, and the dopant of the buffer layer is less diffusing than that of the adjacent layer.

摘要翻译： 在半导体衬底上具有包括有源层的外延层的半导体激光器中，形成与有源层相邻的缓冲层，以便防止高度扩散的掺杂​​剂（Zn）从相邻层（例如 作为第二包覆层。 缓冲层具有与相邻层相同的导电性，具有比有源层更宽的能隙，并且缓冲层的掺杂剂比相邻层的扩散更少。

公开(公告)号：US4520485A

公开(公告)日：1985-05-28

申请号：US357086

申请日：1982-03-11

申请人： Takashi Sugino ,  Kunio Itoh ,  Masaru Wada ,  Hirokazu Shimizu

发明人： Takashi Sugino ,  Kunio Itoh ,  Masaru Wada ,  Hirokazu Shimizu

IPC分类号： H01S5/10 ,  H01S5/223 ,  H01S5/50 ,  H01S3/19 ,  G02B5/174

CPC分类号： H01S5/2232 ,  H01S5/10 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/2234 ,  H01S5/2237 ,  H01S5/50

摘要： On a semiconductor laser substrate, a groove of tapered width is formed, and at least one crystal layer is formed on the substrate. The crystal layer is usable as a waveguide with two light input ends l.sub.1 and l.sub.2 and one light output end l.sub.3 as shown in FIG. 4(C).

摘要翻译： 在半导体激光基板上形成锥形宽度的槽，并且在基板上形成至少一个结晶层。 晶体层可用作具有两个光输入端11和12的波导和一个光输出端13，如图1所示。 4（C）。

公开(公告)号：US4383319A

公开(公告)日：1983-05-10

申请号：US183413

申请日：1980-09-02

申请人： Hirokazu Shimizu ,  Masaru Wada ,  Takashi Sugino ,  Kunio Itoh

发明人： Hirokazu Shimizu ,  Masaru Wada ,  Takashi Sugino ,  Kunio Itoh

IPC分类号： H01L21/208 ,  H01S5/00 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32308 ,  H01S5/3201

摘要： In a laser comprising a GaAs substrate, an active layer of GaAlAs put between a first and a second clad layers, a buffer layer is disposed between said first clad layer and said substrate, and thermal expansion coefficient of the buffer layer is selected smaller than that of said active layer; thereby an internal stress of the active layer is released and lifetime of the laser is very much prolonged.

摘要翻译： 在包括GaAs衬底的激光器中，GaAlAs的有源层放置在第一和第二覆盖层之间，缓冲层设置在所述第一覆盖层和所述衬底之间，并且缓冲层的热膨胀系数被选择为小于 的所述活性层; 从而释放有源层的内部应力，并且激光器的寿命非常长。

公开(公告)号：US4358850A

公开(公告)日：1982-11-09

申请号：US185921

申请日：1980-09-10

申请人： Takashi Sugino ,  Masaru Wada ,  Hirokazu Shimizu ,  Kunio Itoh

发明人： Takashi Sugino ,  Masaru Wada ,  Hirokazu Shimizu ,  Kunio Itoh

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2238

摘要： In a semiconductor laser comprising a terrace-shaped semiconductor substrate, a first clad layer formed on the semiconductor substrate, an active layer formed on the first clad layer and having two discontinuity places at bending portions of the first clad layer, a second clad layer formed on the active layer, and a current injection electrode above a lasing region in the active layer, the improvement is that a stable fundamental transverse lasing mode and a circular laser beam are obtainable from the lasing region definitely separated by two discontinuity places in the active layer.

摘要翻译： 在包括平台状半导体衬底的半导体激光器中，形成在半导体衬底上的第一覆盖层，形成在第一覆盖层上的有源层，并且在第一覆盖层的弯曲部分处具有两个不连续位置，形成第二覆盖层 在有源层上的激光层和激光层上方的电流注入电极，改进之处在于可以从有源层中的两个不连续位置明确分离的激光区域获得稳定的基本横向激光模式和圆形激光束 。

公开(公告)号：US4603419A

公开(公告)日：1986-07-29

申请号：US768144

申请日：1985-08-22

申请人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada

发明人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada

IPC分类号： H01S5/00 ,  H01L21/60 ,  H01S5/02 ,  H01S3/045

CPC分类号： H01S5/02252 ,  H01L2224/32057 ,  H01L2224/83385 ,  H01L2224/83801 ,  H01L24/31 ,  H01L24/83 ,  H01L2924/01014 ,  H01L2924/12042

摘要： A mounting of semiconductor laser chip on a heat sink or metal mount is improved so as to enable high accuracy of position and direction. A heat sink or metal mount, on which a semiconductor laser chip is mounted, comprises two parts, namely a main mount or larger portion and a sub-mount or smaller portion. The semiconductor laser chip is soldered by a solder layer on the sub-mount utilizing a microscope so as to assure an accurate position and an accurate direction with respect to the sub-mount. Then, the sub-mount is soldered on the main mount by a solder layer with an accurate relation both in position and direction by engaging a linear ridge as a first engaging means provided on the upper face of the main mount with a straight groove and a rear end face as a second engaging means. As a result of the above-mentioned structure, accurate position and direction of the semiconductor laser chip with respect to the mount is easily obtainable with a high yield.

摘要翻译： 提高半导体激光芯片在散热片或金属安装座上的安装，以实现高精度的位置和方向。 安装有半导体激光芯片的散热器或金属安装件包括两部分，即主安装件或更大部分以及副安装件或更小部件。 利用显微镜将半导体激光芯片通过焊接层焊接在子座上，以确保相对于子安装座的精确位置和准确的方向。 然后，通过将位于主要安装座的上表面上设置的第一接合装置的直线状脊线与直槽相啮合，通过焊接层将焊接层焊接在主安装座上，焊接层的位置和方向都精确， 后端面作为第二接合装置。 作为上述结构的结果，可以容易地以高产率获得半导体激光器芯片相对于安装座的精确位置和方向。

公开(公告)号：US4488304A

公开(公告)日：1984-12-11

申请号：US583784

申请日：1984-02-29

申请人： Hirokazu Shimizu ,  Kunio Itoh ,  Masaru Wada ,  Takashi Sugino ,  Takako Okabe

发明人： Hirokazu Shimizu ,  Kunio Itoh ,  Masaru Wada ,  Takashi Sugino ,  Takako Okabe

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/022 ,  H01S3/04

CPC分类号： H01S5/02 ,  H01S5/02236

摘要： A stem for a semiconductor laser device of a terraced substrate structure which has a tilted active layer against flat parts of the substrate, the stem comprises a base plate and a heat sink block, a flat face of the heat sink block for bonding the semiconductor laser device thereonto is tilted with respect to a base face of the base plate; this stem has features that the polarization direction of the lased light from the semiconductor laser device can be set to be parallel to (or perpendicular to) the base face of the base plate, and therefore it becomes much easier to make adjustments related with the polarization direction of the lased light.

摘要翻译： 一种用于梯形衬底结构的半导体激光器件的杆，其具有抵抗所述衬底的平坦部分的倾斜的有源层，所述杆包括基板和散热块，所述散热块的平坦表面用于接合所述半导体激光器 装置相对于基板的基面倾斜; 该杆具有使得来自半导体激光装置的带激光的偏振方向能够设定为与基板的基面平行（或垂直）的特征，因此与极化相关的调整变得容易一些 灯光方向。