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    Semiconductor laser device
    3.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US09225146B2

    公开(公告)日：2015-12-29

    申请号：US13826061

    申请日：2013-03-14

    申请人： NICHIA CORPORATION

    发明人： Shingo Masui ,  Yasuhiro Kawata ,  Tsuyoshi Hirao

    IPC分类号： H01S5/223 ,  H01S5/042 ,  H01S5/16 ,  H01S5/22

    CPC分类号： H01S5/223 ,  H01S5/0021 ,  H01S5/0224 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02461 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/34333 ,  H01S2301/16

    摘要： The present invention is aimed to prevent occurrence of COD and rapid degradation of light output in semiconductor laser devices. The semiconductor laser device includes a semiconductor laser element 100A and a support member 200. The semiconductor laser element 100a includes a first electrode 13, a substrate 11, and a semiconductor structure 12 having an emitting facet and a reflecting facet, a second electrode 15, and a pad 16, in this order. The semiconductor laser element 100A is connected to a support member 200 at its pad 16 side via a connecting member 300. The emitting-side end portion of the second electrode 15 is spaced apart from the emitting facet of the semiconductor structure 12, and the emitting-side end portion of the pad 16 is located at an outer side than the emitting-side end portion the second electrode 15.

    摘要翻译： 本发明旨在防止半导体激光器件中COD的发生和光输出的快速劣化。 半导体激光器件包括半导体激光元件100A和支撑部件200.半导体激光器元件100a包括第一电极13，基板11和具有发光面和反射面的半导体结构12，第二电极15， 和垫16。 半导体激光元件100A经由连接部件300在其焊盘16侧与支撑部件200连接。第二电极15的发光侧端部与半导体结构体12的发光面间隔开，发光 焊盘16的侧端部位于比第二电极15的发光侧端部的外侧。

    Optical semiconductor device
    6.
    发明授权
    Optical semiconductor device 有权
    光半导体器件

    公开(公告)号：US08855163B2

    公开(公告)日：2014-10-07

    申请号：US14132170

    申请日：2013-12-18

    申请人： Kabushiki Kaisha Toshiba

    发明人： Haruhiko Yoshida ,  Kazuya Ohira ,  Mizunori Ezaki

    IPC分类号： H01S5/00 ,  H01S5/026

    CPC分类号： H01S5/026 ,  H01S5/0422 ,  H01S5/1032 ,  H01S5/1042 ,  H01S5/1071 ,  H01S5/223

    摘要： An optical semiconductor device of one embodiment includes: a first semiconductor layer of a first conductivity type; an active layer provided on the first semiconductor layer and has a ring- or disk-like shape; a second semiconductor layer of a second conductivity type that is provided on the active layer and has a ring- or disk-like shape; a first electrode provided on the first semiconductor layer; and a second electrode provided on the second semiconductor layer. The first semiconductor layer includes a first region having a ring- or disk-like shape, and a second region provided around the outer circumference of the first region and has a smaller thickness than the first region. The first electrode is provided on the second region, and a groove or holes are provided in a portion of the second region located between the first region and the first electrode.

    摘要翻译： 一个实施例的光学半导体器件包括：第一导电类型的第一半导体层; 设置在所述第一半导体层上并具有环形或圆盘状的有源层; 第二导电类型的第二半导体层，设置在有源层上并具有环形或圆盘状; 设置在所述第一半导体层上的第一电极; 以及设置在第二半导体层上的第二电极。 第一半导体层包括具有环形或圆盘形形状的第一区域和设置在第一区域的外周周围并且具有比第一区域更小的厚度的第二区域。 第一电极设置在第二区域上，并且在位于第一区域和第一电极之间的第二区域的一部分中设置有凹槽或孔。

    Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing
    7.
    发明授权
    Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing 失效
    半导体发光元件，其制造方法，背衬上形成的凸部和用于背衬的凸部形成方法

    公开(公告)号：US08138002B2

    公开(公告)日：2012-03-20

    申请号：US12461409

    申请日：2009-08-11

    申请人： Kiyotaka Yashima ,  Yoshinari Kiwaki ,  Kamada Michiru ,  Sachio Karino ,  Hironobu Narui ,  Nobukata Okano

    发明人： Kiyotaka Yashima ,  Yoshinari Kiwaki ,  Kamada Michiru ,  Sachio Karino ,  Hironobu Narui ,  Nobukata Okano

    IPC分类号： H01L21/00

    CPC分类号： H01S5/227 ,  H01L33/24 ,  H01S5/22 ,  H01S5/223 ,  H01S5/3202

    摘要： A convex part formation method of forming a convex part in parallel with a direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the direction on the backing; (b) etch the backing so as to form a convex-part upper layer whose sectional shape on a cutting plane corresponding to a {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of θU; and (c) further etching the backing so as to form a convex-part lower layer whose sectional shape on the cutting plane corresponding to the {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of θD (where θD≠θU).

    摘要翻译： 在具有{100}面作为其顶面的背衬上形成与背衬的<110>方向平行的凸部的凸部形成方法包括：（a） 110>方向在背面; （b）蚀刻背衬以便形成凸起部分上层，其在与{110}面相对应的切割平面上的截面形状是等腰梯形，其基部比其上侧长，并且侧面 其表面具有倾斜度; U; （c）进一步蚀刻背衬，以便形成凸起部分的下层，其在与{110}面对应的切割平面上的截面形状是等腰梯形，其基部比其上侧长;以及 其侧表面具有倾斜度; D（其中＆amp; D;≠＆thetas; U）。

    SEMICONDUCTOR LASER
    8.
    发明申请
    SEMICONDUCTOR LASER 有权
    半导体激光器

    公开(公告)号：US20110128985A1

    公开(公告)日：2011-06-02

    申请号：US12734665

    申请日：2008-10-17

    申请人： Tsuguki Noma ,  Miroru Murayama ,  Satoshi Uchida ,  Tsutomu Ishikawa

    发明人： Tsuguki Noma ,  Miroru Murayama ,  Satoshi Uchida ,  Tsutomu Ishikawa

    IPC分类号： H01S5/026

    CPC分类号： H01S5/223 ,  H01S5/221 ,  H01S5/2219 ,  H01S5/2227 ,  H01S5/2231 ,  H01S5/34326

    摘要： Provided is a semiconductor laser which has a low operating current and stably oscillates even for high-temperature output. The semiconductor laser is provided with a substrate (10); an n-type clad layer (12) arranged on the substrate (10); an active layer (13) arranged on the n-type clad layer (12); a p-type clad layer (14), which is arranged on the active layer (13) and composed of a compound containing Al and has a stripe-shaped ridge structure to be a current channel; a current block layer (16), which is arranged on the surface of the p-clad layer (14) excluding an upper surface of the ridge structure and composed of a compound containing Al and has an Al composition ratio not more than that of the p-type clad layer (14); and a light absorption layer (17), which is arranged on the current block layer (16) and absorbs light at the laser oscillation wavelength.

    摘要翻译： 提供了即使对于高温输出也具有低工作电流并稳定地振荡的半导体激光器。 半导体激光器设置有基板（10）; 布置在所述基板（10）上的n型覆盖层（12）; 布置在所述n型覆层（12）上的有源层（13）; p型覆盖层（14），其配置在有源层（13）上，由含有Al的化合物构成，具有条状的脊状结构成为电流通道; 布置在p包覆层（14）的表面上的电流阻挡层（16），除了脊结构的上表面，并且由含Al的化合物构成，Al组成比不大于 p型覆层（14）; 以及布置在当前阻挡层（16）上并吸收激光振荡波长的光的光吸收层（17）。

    Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
    10.
    发明授权
    Nitride semiconductor laser device having current blocking layer and method of manufacturing the same 有权
    具有电流阻挡层的氮化物半导体激光器件及其制造方法

    公开(公告)号：US07817692B2

    公开(公告)日：2010-10-19

    申请号：US11790442

    申请日：2007-04-25

    申请人： Hiroaki Matsumura ,  Tomoya Yanamono

    发明人： Hiroaki Matsumura ,  Tomoya Yanamono

    IPC分类号： H01S5/00

    CPC分类号： H01S5/223 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/32341

    摘要： A nitride semiconductor laser including a laminate that includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer, the n-side semiconductor layer or p-side semiconductor layer including a current blocking layer 30 that is made of InxAlyGa1-x-yN (0≦x≦0.1, 0.5≦y≦1, 0.5≦x+y≦1) and has a stripe-shaped window 32 formed therein to pass current flow.

    摘要翻译： 一种包括n侧半导体层，有源层和p侧半导体层的层叠体的氮化物半导体激光器，包括由In x Al y Ga 1构成的电流阻挡层30的n侧半导体层或p侧半导体层 -x-yN（0＆nlE; x＆nlE; 0.1,0.5＆nlE; y＆nlE; 1,0.5＆amp; n; x + y＆nlE; 1）并且具有形成在其中的条形窗口32以传递电流。