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    SEMICONDUCTOR LASER DEVICE
    6.
    发明申请
    SEMICONDUCTOR LASER DEVICE 有权
    半导体激光器件

    公开(公告)号：US20140204969A1

    公开(公告)日：2014-07-24

    申请号：US13826061

    申请日：2013-03-14

    申请人： NICHIA CORPORATION

    发明人： Shingo MASUI ,  Yasuhiro Kawata ,  Tsuyoshi Hirao

    IPC分类号： H01S5/223

    CPC分类号： H01S5/223 ,  H01S5/0021 ,  H01S5/0224 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02461 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/34333 ,  H01S2301/16

    摘要： The present invention is aimed to prevent occurrence of COD and rapid degradation of light output in semiconductor laser devices. The semiconductor laser device includes a semiconductor laser element 100A and a support member 200. The semiconductor laser element 100a includes a first electrode 13, a substrate 11, and a semiconductor structure 12 having an emitting facet and a reflecting facet, a second electrode 15, and a pad 16, in this order. The semiconductor laser element 100A is connected to a support member 200 at its pad 16 side via a connecting member 300. The emitting-side end portion of the second electrode 15 is spaced apart from the emitting facet of the semiconductor structure 12, and the emitting-side end portion of the pad 16 is located at an outer side than the emitting-side end portion the second electrode 15.

    摘要翻译： 本发明旨在防止半导体激光器件中COD的发生和光输出的快速劣化。 半导体激光器件包括半导体激光元件100A和支撑部件200.半导体激光器元件100a包括第一电极13，基板11和具有发光面和反射面的半导体结构12，第二电极15， 和垫16。 半导体激光元件100A经由连接部件300在其焊盘16侧与支撑部件200连接。第二电极15的发光侧端部与半导体结构体12的发光面间隔开，发光 焊盘16的侧端部位于比第二电极15的发光侧端部的外侧。

    EDGE-EMITTING ETCHED-FACET LASERS
    7.
    发明申请
    EDGE-EMITTING ETCHED-FACET LASERS 有权
    边缘发光蚀刻面激光

    公开(公告)号：US20130156059A1

    公开(公告)日：2013-06-20

    申请号：US13690792

    申请日：2012-11-30

    申请人： BinOptics Corporation

    发明人： Alex A. BEHFAR ,  Malcolm R. GREEN ,  Cristian STAGARESCU

    IPC分类号： H01S5/20

    CPC分类号： H01S5/0014 ,  G01R31/26 ,  G01R31/2635 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/0203 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34333

    摘要： A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in said epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.

    摘要翻译： 一种具有衬底的激光芯片，在衬底上的外延结构，所述外延结构包括有源区和产生有源区的有源区，形成在沿第一方向延伸的外延结构中的波导，所述波导具有前蚀刻刻面和 限定边缘发射激光器的后蚀刻刻面，以及形成在所述外延结构中的第一凹陷区域，所述第一凹陷区域布置在距离波导一定距离处，并且具有与所述后蚀刻刻面相邻的开口，所述第一凹陷区域有助于 在激光芯片分离之前对相邻激光芯片进行测试。

    Injector emitter
    8.
    发明授权
    Injector emitter 有权
    注射器发射器

    公开(公告)号：US08204092B2

    公开(公告)日：2012-06-19

    申请号：US11997883

    申请日：2006-07-07

    申请人： Vasily Ivanovich Shveykin

    发明人： Vasily Ivanovich Shveykin

    IPC分类号： H01S5/042

    CPC分类号： H01S5/32341 ,  H01L33/08 ,  H01L33/20 ,  H01S5/1032 ,  H01S5/1039 ,  H01S5/18 ,  H01S5/223 ,  H01S5/42

    摘要： Injection emitters (light-emitting diodes, superluminescent emitters) are used in the form of highly-efficient solid state radiation sources within a large wavelength range and for wide field of application, including general illumination using white light emitters provided with light-emitting diodes. Said invention also relates to superpower highly-efficient and reliable injection surface-emitting lasers, which generate radiation in the form of a plurality of output beams and which are characterized by a novel original and efficient method for emitting the radiation through the external surfaces thereof.

    摘要翻译： 喷射发射体（发光二极管，超发光发射体）以高效固体辐射源的形式在大波长范围内使用，并且用于广泛的应用领域，包括使用配有发光二极管的白光发射器的一般照明。 所述发明还涉及超大功率高效可靠的注入表面发射激光器，其产生多个输出光束形式的辐射，其特征在于用于通过其外表面发射辐射的新颖且有效的方法。

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT, FABRICATION METHOD THEREOF, CONVEX PART FORMED ON BACKING, AND CONVEX PART FORMATION METHOD FOR BACKING
    9.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT, FABRICATION METHOD THEREOF, CONVEX PART FORMED ON BACKING, AND CONVEX PART FORMATION METHOD FOR BACKING 有权
    半导体发光元件，其制造方法，背面形成的凸部，以及用于支撑的凸起部分形成方法

    公开(公告)号：US20120122257A1

    公开(公告)日：2012-05-17

    申请号：US13356202

    申请日：2012-01-23

    申请人： Kiyotaka Yashima ,  Yoshinari Kiwaki ,  Kamada Michiru ,  Sachio Karino ,  Hironobu Narui ,  Nobukata Okano

    发明人： Kiyotaka Yashima ,  Yoshinari Kiwaki ,  Kamada Michiru ,  Sachio Karino ,  Hironobu Narui ,  Nobukata Okano

    IPC分类号： H01L33/14 ,  H01L33/16

    CPC分类号： H01S5/227 ,  H01L33/24 ,  H01S5/22 ,  H01S5/223 ,  H01S5/3202

    摘要： A convex part formation method of forming a convex part in parallel with a direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the direction on the backing; (b) etch the backing so as to form a convex-part upper layer whose sectional shape on a cutting plane corresponding to a {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of θU; and (c) further etching the backing so as to form a convex-part lower layer whose sectional shape on the cutting plane corresponding to the {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of θD (where θD≠θU).

    摘要翻译： 在具有{100}面作为其顶面的背衬上形成与背衬的<110>方向平行的凸部的凸部形成方法包括：（a） 110>方向在背面; （b）蚀刻背衬以便形成凸起部分上层，其在与{110}面相对应的切割平面上的截面形状是等腰梯形，其基部比其上侧长，并且侧面 其表面具有倾斜度; U; （c）进一步蚀刻背衬，以便形成凸起部分的下层，其在与{110}面对应的切割平面上的截面形状是等腰梯形，其基部比其上侧长;以及 其侧表面具有倾斜度; D（其中＆amp; D;≠＆thetas; U）。

    Semiconductro laser device
    10.
    发明授权
    Semiconductro laser device 有权
    半导体激光器件

    公开(公告)号：US07879628B2

    公开(公告)日：2011-02-01

    申请号：US12314348

    申请日：2008-12-09

    申请人： Tsunenori Asatsuma ,  Shoji Hirata

    发明人： Tsunenori Asatsuma ,  Shoji Hirata

    IPC分类号： H01L21/20

    CPC分类号： H01S5/223 ,  H01S5/10 ,  H01S5/105 ,  H01S5/2036 ,  H01S5/2081

    摘要： This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal formed on both side regions of the light emission area is the crystal having the property that 780 nm laser light cannot be wave-guided in a resonator direction parallel to a striped ridge within the region. The light traveling in the direction can exist only in the light emission area sandwiched between two photonic crystal regions, which results in the light laterally confined by the photonic crystal region. The optical confinement of the region suppresses the loss in the light at both edges of the stripe serving as the boundary of the optical confinement, which reduces the curve of wave surface and uniforms the light intensity distributions of NFP and FFP.

    摘要翻译： 该半导体激光装置具有与现有的广域型半导体激光装置相同的结构，不同之处在于有源包层和发光层的发光区域的两个侧面区域是二维光子结晶的。 形成在发光区域的两侧区域上的二维光子晶体是具有780nm激光不能在与区域内的条纹脊平行的谐振器方向上被波导的特性的晶体。 沿该方向行进的光只能存在于夹在两个光子晶体区域之间的发光区域中，这导致由光子晶体区域横向限制的光。 该区域的光学限制抑制了作为光学限制边界的条纹的两边的光的损失，这降低了波面的曲线并使NFP和FFP的光强分布均匀化。