公开(公告)号：US4603419A

公开(公告)日：1986-07-29

申请号：US768144

申请日：1985-08-22

申请人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada

发明人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada

IPC分类号： H01S5/00 ,  H01L21/60 ,  H01S5/02 ,  H01S3/045

CPC分类号： H01S5/02252 ,  H01L2224/32057 ,  H01L2224/83385 ,  H01L2224/83801 ,  H01L24/31 ,  H01L24/83 ,  H01L2924/01014 ,  H01L2924/12042

摘要： A mounting of semiconductor laser chip on a heat sink or metal mount is improved so as to enable high accuracy of position and direction. A heat sink or metal mount, on which a semiconductor laser chip is mounted, comprises two parts, namely a main mount or larger portion and a sub-mount or smaller portion. The semiconductor laser chip is soldered by a solder layer on the sub-mount utilizing a microscope so as to assure an accurate position and an accurate direction with respect to the sub-mount. Then, the sub-mount is soldered on the main mount by a solder layer with an accurate relation both in position and direction by engaging a linear ridge as a first engaging means provided on the upper face of the main mount with a straight groove and a rear end face as a second engaging means. As a result of the above-mentioned structure, accurate position and direction of the semiconductor laser chip with respect to the mount is easily obtainable with a high yield.

摘要翻译： 提高半导体激光芯片在散热片或金属安装座上的安装，以实现高精度的位置和方向。 安装有半导体激光芯片的散热器或金属安装件包括两部分，即主安装件或更大部分以及副安装件或更小部件。 利用显微镜将半导体激光芯片通过焊接层焊接在子座上，以确保相对于子安装座的精确位置和准确的方向。 然后，通过将位于主要安装座的上表面上设置的第一接合装置的直线状脊线与直槽相啮合，通过焊接层将焊接层焊接在主安装座上，焊接层的位置和方向都精确， 后端面作为第二接合装置。 作为上述结构的结果，可以容易地以高产率获得半导体激光器芯片相对于安装座的精确位置和方向。

公开(公告)号：US4488304A

公开(公告)日：1984-12-11

申请号：US583784

申请日：1984-02-29

申请人： Hirokazu Shimizu ,  Kunio Itoh ,  Masaru Wada ,  Takashi Sugino ,  Takako Okabe

发明人： Hirokazu Shimizu ,  Kunio Itoh ,  Masaru Wada ,  Takashi Sugino ,  Takako Okabe

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/022 ,  H01S3/04

CPC分类号： H01S5/02 ,  H01S5/02236

摘要： A stem for a semiconductor laser device of a terraced substrate structure which has a tilted active layer against flat parts of the substrate, the stem comprises a base plate and a heat sink block, a flat face of the heat sink block for bonding the semiconductor laser device thereonto is tilted with respect to a base face of the base plate; this stem has features that the polarization direction of the lased light from the semiconductor laser device can be set to be parallel to (or perpendicular to) the base face of the base plate, and therefore it becomes much easier to make adjustments related with the polarization direction of the lased light.

摘要翻译： 一种用于梯形衬底结构的半导体激光器件的杆，其具有抵抗所述衬底的平坦部分的倾斜的有源层，所述杆包括基板和散热块，所述散热块的平坦表面用于接合所述半导体激光器 装置相对于基板的基面倾斜; 该杆具有使得来自半导体激光装置的带激光的偏振方向能够设定为与基板的基面平行（或垂直）的特征，因此与极化相关的调整变得容易一些 灯光方向。

公开(公告)号：US4456999A

公开(公告)日：1984-06-26

申请号：US270352

申请日：1981-06-04

申请人： Takashi Sugino ,  Kunio Itoh ,  Masaru Wada ,  Hirokazu Shimizu

发明人： Takashi Sugino ,  Kunio Itoh ,  Masaru Wada ,  Hirokazu Shimizu

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2238

摘要： A terrace-substrate laser is improved by forming a stripe-shaped impurity diffused current-injection region (27) from the cap layer (25) at least so as to reach the oblique lasing region (231) of the active layer (23), so that the corner part of the current injection region (27) touches the lasing region (231); thereby current injection efficiency to the lasing region is highly improved and the injected current is effectively limited in the oblique lasing region even when a large current is injected, and furthermore, a threshold current can be greatly reduced. This laser can perform a stable fundamental transverse mode oscillation even at a large current operation.

摘要翻译： 至少通过从盖层（25）形成条形杂质扩散电流注入区域（27）至达到有源层（23）的倾斜激光区域（231）来改善平台 - 衬底激光器， 使得电流注入区域（27）的拐角部分接触激光区域（231）; 因此即使在注入大电流的情况下，对激光区域的电流注入效率高度提高，并且在斜激光区域有效地限制注入电流，此外，可以大大降低阈值电流。 该激光器即使在大电流操作下也可以执行稳定的基本横模振荡。

公开(公告)号：US4392227A

公开(公告)日：1983-07-05

申请号：US224821

申请日：1981-01-13

申请人： Kunio Itoh ,  Takashi Sugino ,  Masaru Wada ,  Hirokazu Shimizu

发明人： Kunio Itoh ,  Takashi Sugino ,  Masaru Wada ,  Hirokazu Shimizu

IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/2238 ,  H01S5/2059 ,  H01S5/3201 ,  H01S5/32308

摘要： In a terraced substrate type semiconductor laser comprising a semiconductor substrate (11) having a step (T) on its principal face, an active layer (13) with an oblique central region (131), defined between two bendings, as stripe-shaped lasing region near the foot of the step part (T) of the substrate (11), and a clad layer (14) formed on the active layer (13),The device is characterized by comprising a current injection region (22) which is formed by diffusing an impurity, in a manner that a diffusion front corner (221) penetrate the clad layer (14) and contacts the oblique lasing region (131) thereby to form the current injection path (221) very narrow and closely to the central part of the stripe-shaped lasing region (13), thereby effectively confining the injected current to the lasing region (131) and hence attaining very low threshold current and very high external differential quantum efficiency.

摘要翻译： 在包括在其主面上具有台阶（T）的半导体衬底（11）的梯形衬底型半导体激光器中，具有定义在两个弯曲部之间的倾斜中心区域（131）的有源层（13）作为条形激光 （11）的台阶部（T）的脚附近的区域，以及形成在有源层（13）上的包层（14）。该器件的特征在于包括形成有电流注入区域（22）的电流注入区域 通过以扩散前角（221）穿透包覆层（14）并与斜激光区域（131）接触的方式扩散杂质，从而形成非常窄且紧密相对于中心部分的电流注入路径（221） 由此有效地将注入的电流限制到激光区域（131），从而获得非常低的阈值电流和非常高的外部微分量子效率。

公开(公告)号：US4360920A

公开(公告)日：1982-11-23

申请号：US185922

申请日：1980-09-10

申请人： Masaru Wada ,  Hirokazu Shimizu ,  Takashi Sugino ,  Kunio Itoh

发明人： Masaru Wada ,  Hirokazu Shimizu ,  Takashi Sugino ,  Kunio Itoh

IPC分类号： H01L21/306 ,  H01L21/208 ,  H01S5/00 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2238

摘要： In a semiconductor laser a semiconductor substrate has a terrace structure in a manner to have an upper face, a lower face, and a step part disposed between the upper and lower faces. A clad layer is formed on the semiconductor substrate having an upper part, a lower part, and a central part. The upper part is on the upper face and the step part. The lower part is on the lower face and the central part connecting the upper and lower parts and is thicker than the upper and lower parts in a manner that a step-shaped downward-bending surface of the central part is located above the lower face. An active layer formed on the clad layer includes an upper lateral part, a lower lateral part, a center part connecting the upper and lower lateral parts, with a lasing region being a part of the upper lateral part which is near a bending part of the step-shaped downward-bending surface.

摘要翻译： 在半导体激光器中，半导体衬底具有以上表面，下表面和设置在上表面和下表面之间的台阶部分的方式设置的露台结构。 在具有上部，下部和中心部的半导体基板上形成包覆层。 上部位于上表面和台阶部分。 下部位于下表面，中央部分连接上部和下部，并且比中部的台阶向下弯曲表面位于下表面上方更厚于上部和下部。 形成在包层上的有源层包括上侧部分，下侧部分，连接上下侧部分的中心部分，激光区域是上侧部分的靠近弯曲部分的一部分 台阶向下弯曲面。

公开(公告)号：US4520485A

公开(公告)日：1985-05-28

申请号：US357086

申请日：1982-03-11

申请人： Takashi Sugino ,  Kunio Itoh ,  Masaru Wada ,  Hirokazu Shimizu

发明人： Takashi Sugino ,  Kunio Itoh ,  Masaru Wada ,  Hirokazu Shimizu

IPC分类号： H01S5/10 ,  H01S5/223 ,  H01S5/50 ,  H01S3/19 ,  G02B5/174

CPC分类号： H01S5/2232 ,  H01S5/10 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/2234 ,  H01S5/2237 ,  H01S5/50

摘要： On a semiconductor laser substrate, a groove of tapered width is formed, and at least one crystal layer is formed on the substrate. The crystal layer is usable as a waveguide with two light input ends l.sub.1 and l.sub.2 and one light output end l.sub.3 as shown in FIG. 4(C).

摘要翻译： 在半导体激光基板上形成锥形宽度的槽，并且在基板上形成至少一个结晶层。 晶体层可用作具有两个光输入端11和12的波导和一个光输出端13，如图1所示。 4（C）。

公开(公告)号：US4383319A

公开(公告)日：1983-05-10

申请号：US183413

申请日：1980-09-02

申请人： Hirokazu Shimizu ,  Masaru Wada ,  Takashi Sugino ,  Kunio Itoh

发明人： Hirokazu Shimizu ,  Masaru Wada ,  Takashi Sugino ,  Kunio Itoh

IPC分类号： H01L21/208 ,  H01S5/00 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32308 ,  H01S5/3201

摘要： In a laser comprising a GaAs substrate, an active layer of GaAlAs put between a first and a second clad layers, a buffer layer is disposed between said first clad layer and said substrate, and thermal expansion coefficient of the buffer layer is selected smaller than that of said active layer; thereby an internal stress of the active layer is released and lifetime of the laser is very much prolonged.

摘要翻译： 在包括GaAs衬底的激光器中，GaAlAs的有源层放置在第一和第二覆盖层之间，缓冲层设置在所述第一覆盖层和所述衬底之间，并且缓冲层的热膨胀系数被选择为小于 的所述活性层; 从而释放有源层的内部应力，并且激光器的寿命非常长。

公开(公告)号：US4358850A

公开(公告)日：1982-11-09

申请号：US185921

申请日：1980-09-10

申请人： Takashi Sugino ,  Masaru Wada ,  Hirokazu Shimizu ,  Kunio Itoh

发明人： Takashi Sugino ,  Masaru Wada ,  Hirokazu Shimizu ,  Kunio Itoh

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2238

摘要： In a semiconductor laser comprising a terrace-shaped semiconductor substrate, a first clad layer formed on the semiconductor substrate, an active layer formed on the first clad layer and having two discontinuity places at bending portions of the first clad layer, a second clad layer formed on the active layer, and a current injection electrode above a lasing region in the active layer, the improvement is that a stable fundamental transverse lasing mode and a circular laser beam are obtainable from the lasing region definitely separated by two discontinuity places in the active layer.

摘要翻译： 在包括平台状半导体衬底的半导体激光器中，形成在半导体衬底上的第一覆盖层，形成在第一覆盖层上的有源层，并且在第一覆盖层的弯曲部分处具有两个不连续位置，形成第二覆盖层 在有源层上的激光层和激光层上方的电流注入电极，改进之处在于可以从有源层中的两个不连续位置明确分离的激光区域获得稳定的基本横向激光模式和圆形激光束 。

公开(公告)号：US4366568A

公开(公告)日：1982-12-28

申请号：US217652

申请日：1980-12-18

申请人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada

发明人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada

IPC分类号： H01S5/223 ,  H01S3/19

CPC分类号： H01S5/223

摘要： In a semiconductor laser, an n-type first clad layer, an undoped active layer, and a p-type second clad layer are formed on an n-type semiconductor substrate by liquid phase sequential epitaxial growth. The second clad layer is photo-etched to form a stripe-shaped thicker part at the center and thinner parts on both sides thereof. Thereafter, an n-type isolation layer is further epitaxially formed, and a Zn impurity is diffused in a thinner part of the isolation layer in a stripe-shaped pattern at the position above the thicker part, thereby forming a p+-type conduction region in the central part of the thinner part of the n-type isolation layer. By forming the stripe-shaped ridge part in the clad layer, light lased in the active layer is effectively confined in a stripe-shaped part thereof which is underneath the ridge part. Therefore, a stable transverse mode of lasing results. By forming the thicker part, the n-type isolation layer, very closely above the thinner side parts of the active layer, injected current is effectively confined to the lasing region which is underneath the ridge part. Therefore, the threshold current is decreased.

摘要翻译： 在半导体激光器中，通过液相顺序外延生长在n型半导体衬底上形成n型第一覆盖层，未掺杂有源层和p型第二覆盖层。 第二覆盖层被光蚀刻以在中心形成条状较厚的部分，并在其两侧形成更薄的部分。 此后，进一步外延形成n型隔离层，并且在较厚部分上方的位置处，在杂质图案中的Zn隔离层的较薄部分中扩散Zn杂质，形成p +型导电区​​域 n型隔离层较薄部分的中心部分。 通过在包覆层中形成条状的脊部，在活性层中照射的光被有效地限制在其脊部下方的条状部分中。 因此，可以获得稳定的激光横向模式。 通过形成较厚的部分，非常接近活性层较薄侧面部分的n型隔离层注入电流有效地限制在脊部下方的激光区域。 因此，阈值电流降低。

公开(公告)号：US4365336A

公开(公告)日：1982-12-21

申请号：US208021

申请日：1980-11-18

申请人： Takashi Sugino ,  Hirokazu Shimizu ,  Masaru Wada ,  Kunio Itoh

发明人： Takashi Sugino ,  Hirokazu Shimizu ,  Masaru Wada ,  Kunio Itoh

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2238

摘要： A terraced-substrate structure semiconductor laser in accordance with the present invention comprises:a terrace-shaped semiconductor substrate having an upper face, a lower face and a step part disposed between said upper face and said lower face,a clad layer formed on said terrace shaped semiconductor substrate and including at least an upper part formed on said upper face and a step part having a triangular section and formed at a corner defined by said lower face and said step part, said step part being thicker than said upper part,an active layer formed on said first clad layer and including a horizontal upper part formed on said upper part of said first clad layer and an oblique lasing region formed oblique on said step part of said first clad layer, but excluding a lower horizontal part, hitherto formed on said lower face,a current injection electrode having a stripe shaped injection face disposed above said lasing region,the improvement is that said active layer is terminated substantially at a lower end of said oblique lasing region by etching away said lower horizontal part of the active layer and said clad layer at the part on said lower face, thereby limiting a path of injected current to enter only in said lasing region.

摘要翻译： 根据本发明的梯形半导体衬底结构半导体激光器包括：具有上表面，下表面和设置在所述上​​表面和所述下表面之间的台阶部分的平台状半导体衬底，形成在所述露台上的覆层 并且至少包括形成在所述上表面上的上部和具有三角形截面的阶梯部，并形成在由所述下表面和所述台阶部限定的拐角处，所述台阶部分比所述上部部分厚，活动部件 层，形成在所述第一包层上，并且包括形成在所述第一包层的所述上部上的水平上部部分和在所述第一包层的所述台阶部分上倾斜形成的倾斜激光区域，但不包括以前形成的下部水平部分 所述下表面，具有设置在所述激光区域上方的条形注入面的电流注入电极，改善的是所述活性层是终端 基本上在所述斜激光区域的下端，通过在所述下表面的部分刻蚀掉有源层和所述覆盖层的所述下水平部分，从而限制注入电流的路径仅在所述激光区域中进入。