摘要:
A novel electron multiplier that regulates in real time the gain of downstream dynodes as the instrument receives input signals is introduced. In particular, the methods, electron multiplier structures, and coupled control circuits of the present invention enable a resultant on the fly control signal to be generated upon receiving a predetermined threshold detection signal so as to enable the voltage regulation of one or more downstream dynodes near the output of the device. Accordingly, such a novel design, as presented herein, prevents the dynodes near the output of the instrument from being exposed to deleterious current pulses that can accelerate the aging process of the dynode structures that are essential to the device.
摘要:
The invention provides a switchable photomultiplier switchable between a detecting state and a non-detecting state including a cathode upon which incident radiation is arranged to impinge. The photomultiplier also includes a series of dynodes arranged to amplify a current created at the cathode upon detection of photoradiation. The invention also provides a detection system arranged to detect radiation-emitting material in an object. The system includes a detector switchable between a detecting state in which the detector is arranged to detect radiation and a non-detecting state in which the detector is arranged to not detect radiation. The system further includes a controller arranged to control switching of the detector between the states such that the detector is switched to the non-detecting state whilst an external radiation source is irradiating the object.
摘要:
A light sensing circuit of a touch panel includes a photodiode including an anode and a cathode; a driving transistor including a gate electrode connected to the cathode of the photodiode, a first electrode to receive a first ground voltage, and a second electrode; a first switching transistor including a first electrode connected to the second electrode of the driving transistor, a second electrode to output a data signal, and a gate electrode to receive a scan signal; a first capacitor including a first terminal connected to the cathode of the photodiode, and a second terminal; and a voltage compensating unit to apply a compensation voltage to the second terminal of the first capacitor.
摘要:
A device and method are presented for use in measuring photon energy. The device comprises at least one pixel unit (10) including a Photocathode (12) that emits electrons in response to absorbed photons; an Anode (14); and a control unit (19) operable for controlling an electric current from the Photocathode (12) to the Anode (14) so as to selectively prevent electrons' arrival to the Anode (14) to thereby scan a spectrum of photon energies incident on the Photocathode (12).
摘要:
A photomultiplier system includes a detector tube, a power supply unit, and a thermal isolation element. The power supply unit provides an accelerating voltage for operating the detector tube. The detector tube and the power supply unit are disposed on different sides of the thermal isolation element.
摘要:
Photon counting electronics and method that allow for counting single photons with sensitivity, linearity, and accuracy. The method for accurately counting photon numbers entering a photon multiplier tube comprising the steps of counting the number of the electrical pulses generated by photons; measuring the duration of the electrical pulses with a timing clock, wherein the timing clock can count the number of temporally overlapped photons; measuring the intensity of the electrical pulses with an intensity discriminator, wherein the intensity discriminator can count the number of intensity-overlapped photons; and summing the number of the electrical pulses, the number of temporally overlapped photon, and the number of intensity-overlapped photons, that is equal to the total number of photons.
摘要:
Photon counting electronics and method that allow for counting single photons with sensitivity, linearity, and accuracy. The method for accurately counting photon numbers entering a photon multiplier tube comprising the steps of counting the number of the electrical pulses generated by photons; measuring the duration of the electrical pulses with a timing clock, wherein the timing clock can count the number of temporally overlapped photons; measuring the intensity of the electrical pulses with an intensity discriminator, wherein the intensity discriminator can count the number of intensity-overlapped photons; and summing the number of the electrical pulses, the number of temporally overlapped photon, and the number of intensity-overlapped photons, that is equal to the total number of photons.
摘要:
A microchannel amplifier includes an insulating substrate that defines at least one microchannel pore through the substrate from an input surface to an output surface. A conductive layer is formed on an outer surface of the at least one microchannel pore that has a non-uniform resistance as a function of distance through the at least one microchannel pore. The non-uniform resistance is selected to simulate saturation by reducing gain as a function of input current and bias voltage compared with uniform resistance. A first and second electrode is deposited on a respective one of the input and the output surfaces of the insulating substrate. The microchannel amplifier amplifying emissions propagating through the at least one microchannel pore when the first and second electrodes are biased.
摘要:
An electron sensing device for receiving electrons from an output surface of an electron gain device has a silicon die including an active surface area for positioning below the output surface of an electron gain device. The silicon die also includes a silicon step formed below and surrounding the active surface area, and a first array of bond pads formed on the silicon step for providing output signals from the silicon die. When the electron sensing device is positioned below the electron gain device, a tight vertical clearance is formed between the output surface of the electron gain device and the active surface area of the electron sensing device.