公开(公告)号：US11349451B2

公开(公告)日：2022-05-31

申请号：US16242048

申请日：2019-01-08

申请人： Murata Manufacturing Co., Ltd.

发明人： Tsutomu Takai ,  Koji Yamamoto ,  Hideki Iwamoto

IPC分类号： H03H9/02 ,  H01L41/047 ,  H01L41/053 ,  H03H9/25 ,  H03H9/54 ,  H01L41/18 ,  H03H9/05

摘要： An elastic wave device includes a SiNx layer stacked directly or indirectly on a supporting substrate made of a semiconductor material, a piezoelectric film stacked on directly or indirectly the SiNx layer, and an interdigital transducer electrode stacked directly or indirectly on at least one main surface of the piezoelectric film. In the SiNx layer, x is about 1.34 or more and about 1.66 or less.

公开(公告)号：US11336260B2

公开(公告)日：2022-05-17

申请号：US16898593

申请日：2020-06-11

申请人： Murata Manufacturing Co., Ltd.

发明人： Junpei Yasuda

IPC分类号： H03H9/54 ,  H03F3/04 ,  H03H9/17

摘要： A filter module includes a filter provided on a path connecting an input/output terminal and an input/output terminal, a filter provided on a path connecting an input/output terminal and an input/output terminal, a switch that switches between electrical connection and electrical disconnection between a wire connected to the input/output terminal and a ground, and a switch that switches between electrical connection and electrical disconnection between a wire connected to the input/output terminal and the ground. When the wire and the ground are electrically connected by the switch, the wire and the ground are electrically disconnected by the switch, and when the wire and the ground are electrically connected by the switch, the wire and the ground are electrically disconnected by the switch.

公开(公告)号：US20220149817A1

公开(公告)日：2022-05-12

申请号：US17440160

申请日：2020-03-27

申请人： RF360 EUROPE GMBH

发明人： Edgar SCHMIDHAMMER

IPC分类号： H03H9/56 ,  H03H9/54

摘要： A micro-acoustic bandstop filter comprises a serial inductor (130) coupled between first and second ports (110, 120). A circuit block (140) coupled between the first and second port comprises at least one serial capacitance (141) and at least one shunt capacitance (142), wherein the serial and/or the shunt capacitance is realized by a micro-acoustic resonator (141). A shunt inductor (150) is coupled between the circuit block (140) and a terminal for a reference potential (160).

公开(公告)号：US20220140812A1

公开(公告)日：2022-05-05

申请号：US17476992

申请日：2021-09-16

申请人： RF360 EUROPE GMBH

发明人： Ilya LUKASHOV ,  Robert Felix BYWALEZ

IPC分类号： H03H9/17 ,  H03H9/54

摘要： In certain aspects, a chip includes an acoustic resonator, and a mirror under the acoustic resonator. The mirror includes a first plurality of porous silicon layers, and a second plurality of porous silicon layers, wherein the mirror alternates between the first plurality of porous silicon layers and the second plurality of porous silicon layers, and each of the first plurality of porous silicon layers has a higher porosity than each of the second plurality of porous silicon layers.

公开(公告)号：US11323088B2

公开(公告)日：2022-05-03

申请号：US16989129

申请日：2020-08-10

申请人： Samsung Electro-Mechanics Co., Ltd.

发明人： Tae Kyung Lee ,  Tae Yoon Kim ,  Sang Kee Yoon ,  Chang Hyun Lim ,  Jong Woon Kim ,  Moon Chul Lee

IPC分类号： H03H9/02 ,  H03H9/54 ,  H03H9/17 ,  H03H9/13 ,  H01L41/053 ,  H01L41/29 ,  H01L41/31 ,  H03H3/02

摘要： An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

公开(公告)号：US11316498B2

公开(公告)日：2022-04-26

申请号：US16323216

申请日：2017-08-04

申请人： SNAPTRACK, INC.

发明人： Edgar Schmidhammer

IPC分类号： H03H9/54 ,  H03H9/64 ,  H03H9/56 ,  H03H9/60 ,  H03H7/12 ,  H03H7/46

摘要： A reconfigurable microacoustic filter is specified which comprises a ladder-type-like filter topology and a suitably placed adjustable capacitive element.

公开(公告)号：US20220123720A1

公开(公告)日：2022-04-21

申请号：US17561714

申请日：2021-12-24

申请人： Resonant Inc.

发明人： Bryant Garcia ,  Ventsislav Yantchev ,  Patrick Turner ,  Viktor Plesski ,  Julius Koskela ,  Soumya Yandrapalli ,  Neal Fenzi ,  Robert B. Hammond

IPC分类号： H03H9/17 ,  H03H9/02 ,  H03H9/54

摘要： Acoustic resonators and filter devices. An acoustic resonator includes a piezoelectric plate having front and back surfaces, a portion of the piezoelectric plate forming a diaphragm, and a conductor pattern on the front surface, the conductor pattern including an interdigital transducer (IDT), interleaved fingers of the IDT on the diaphragm. A ratio of a mark of the interleaved fingers to a pitch of the interleaved fingers is greater than or equal to 0.12 and less than or equal to 0.3. The pitch of the interleaved fingers is greater than or equal to 6 times a thickness of the piezoelectric plate and less than or equal to 12.5 times the thickness of the piezoelectric plate.

公开(公告)号：US20220116015A1

公开(公告)日：2022-04-14

申请号：US17560889

申请日：2021-12-23

申请人： Resonant Inc.

发明人： Bryant Garcia ,  Ventsislav Yantchev ,  Patrick Turner ,  Viktor Plesski ,  Julius Koskela ,  Soumya Yandrapalli ,  Neal Fenzi ,  Robert B. Hammond

IPC分类号： H03H9/17 ,  H03H9/02 ,  H03H9/54 ,  H03H9/13

摘要： Acoustic resonator devices and acoustic filter devices. An acoustic resonator includes a piezoelectric plate having front and back surfaces, a portion of the piezoelectric plate forming a diaphragm, and a conductor pattern on the front surface, the conductor pattern comprising an interdigital transducer (IDT), interleaved fingers of the IDT on the diaphragm. A ratio of a mark of the interleaved fingers to a pitch of the interleaved fingers is greater than or equal to 0.12 and less than or equal to 0.3. A thickness of the interleaved fingers is greater than or equal to 0.85 times a thickness of the piezoelectric plate and less than or equal to 2.5 times the thickness of the piezoelectric plate.

公开(公告)号：US20220103153A1

公开(公告)日：2022-03-31

申请号：US17548599

申请日：2021-12-13

申请人： VANGUARD INTERNATIONAL SEMICONDUCTOR SIGAPORE PTE. LTD.

发明人： You Qian ,  Humberto CAMPANELLA PINEDA ,  RAKESH KUMAR

IPC分类号： H03H9/02 ,  H03H9/13 ,  H03H9/17 ,  H03H3/02 ,  H01L41/29 ,  H01L41/31 ,  H03H9/54

摘要： Method of designing a BAW resonator and filter and the resulting devices are provided. Embodiments include patterning a bottom electrode of a resonator, patterning a top electrode of the resonator, and intersecting area of the resonator, wherein the effective area includes a closed-loop contour line including a pulse function pattern with predefined amplitude, period and a number of repetitions of pulses along the closed-loop contour line.

公开(公告)号：US20220094333A1

公开(公告)日：2022-03-24

申请号：US17483355

申请日：2021-09-23

申请人： VTT Technical Research Centre of Finland Ltd

发明人： Tuomas Pensala ,  Tapani Makkonen

IPC分类号： H03H9/54 ,  H03H3/02 ,  H03H9/13 ,  H03H9/17

摘要： Acoustic wave devices are disclosed. The devices include a substrate, a bi-layer reflector and an acoustic wave resonator. The bi-electric reflector is above the substrate and includes a first layer that has a first acoustic impedance, and a second layer that has a second acoustic impedance lower than the first acoustic impedance. The first layer has a first surface that includes a floating region that provides a ceiling of a cavity. The second layer is on top of the floating region of the first layer. The acoustic wave resonator is on top of the second layer of the bi-layer reflector. The acoustic wave resonator includes a piezoelectric layer, an electrode and a counter-electrode such that application of a radio frequency voltage between the electrode and the counter-electrode creates acoustic resonance waves in the piezoelectric layer.