公开(公告)号：US10756703B2

公开(公告)日：2020-08-25

申请号：US15635551

申请日：2017-06-28

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Yoon Kim ,  Tae Kyung Lee ,  Sung Min Cho ,  Sang Kee Yoon ,  Moon Chul Lee

IPC: H01L41/053 ,  H01L41/09 ,  H03H9/17 ,  H03H9/02

Abstract: A bulk acoustic wave resonator includes: a support part disposed on a substrate; a layer disposed on the support part, wherein an air cavity is formed between the support part, the substrate and the layer; and a frame extending along the layer, within the air cavity, and spaced apart from the support part.

公开(公告)号：US11595015B2

公开(公告)日：2023-02-28

申请号：US16992434

申请日：2020-08-13

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Tae Yoon Kim ,  Sang Kee Yoon ,  Chang Hyun Lim ,  Jong Woon Kim ,  Moon Chul Lee

IPC: H03H9/02 ,  H03H9/54 ,  H03H9/17 ,  H03H9/13 ,  H01L41/053 ,  H01L41/29 ,  H01L41/31 ,  H03H3/02

Abstract: An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

公开(公告)号：US11476833B2

公开(公告)日：2022-10-18

申请号：US16435621

申请日：2019-06-10

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Yoon Kim ,  Tae Kyung Lee ,  Sang Kee Yoon ,  Sung Jun Lee ,  Chang Hyun Lim ,  Nam Jung Lee ,  Tae Hun Lee ,  Moon Chul Lee

IPC: H03H9/17 ,  H03H9/02 ,  H03H9/13

Abstract: An acoustic resonator includes a substrate, an insulation layer disposed on the substrate, a resonating portion disposed on the insulation layer and having a first electrode, a piezoelectric layer, and a second electrode, stacked thereon, a cavity disposed between the insulation layer and the resonating portion, a protruded portion having a plurality of protrusions disposed on a lower surface of the cavity, and a hydrophobic layer disposed on an upper surface of the cavity and a surface of the protruded portion.

公开(公告)号：US11476826B2

公开(公告)日：2022-10-18

申请号：US15812842

申请日：2017-11-14

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won Han ,  Dae Ho Kim ,  Yong Suk Kim ,  Seung Hun Han ,  Moon Chul Lee ,  Chang Hyun Lim ,  Sung Jun Lee ,  Sang Kee Yoon ,  Tae Yoon Kim ,  Sang Uk Son

IPC: H03H9/02 ,  H03H9/17 ,  H03H9/13 ,  H03H3/02

Abstract: A bulk acoustic wave resonator includes: a substrate; a membrane layer forming a cavity together with the substrate; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on a flat surface of the lower electrode; and an upper electrode covering a portion of the piezoelectric layer and exposing a side of the piezoelectric layer to air, wherein the piezoelectric layer includes a step portion extended from the side of the piezoelectric layer and disposed on the flat surface of the lower electrode.

公开(公告)号：US11431318B2

公开(公告)日：2022-08-30

申请号：US16391650

申请日：2019-04-23

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won Han ,  Chang Hyun Lim ,  Tae Yoon Kim ,  Sang Uk Son ,  Sang Kee Yoon

IPC: H03H9/13 ,  H03H9/17 ,  H01L41/047 ,  H03H3/02 ,  H03H9/02

Abstract: An acoustic resonator includes: a substrate; a resonant portion including a center portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate, and an extension portion disposed along a periphery of the center portion; and a first metal layer disposed outwardly of the resonant portion to be electrically connected to the first electrode. The extension portion includes a lower insertion layer disposed on an upper surface of the first electrode or a lower surface of the first electrode. The piezoelectric layer includes a piezoelectric portion disposed in the center portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline according to a shape of the lower insertion layer. The lower insertion layer is formed of a conductive material extending an electrical path between the first electrode and the first metal layer.

公开(公告)号：US10903817B2

公开(公告)日：2021-01-26

申请号：US16196453

申请日：2018-11-20

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Sang Kee Yoon ,  Nam Soo Park ,  Hyung Jae Park ,  Tae Kyung Lee ,  Moon Chul Lee

IPC: H03H9/17 ,  H03H3/02 ,  H01L21/3213 ,  H03H9/02

Abstract: A method of manufacturing a bulk acoustic wave resonator includes: forming a sacrificial layer on a substrate protection layer; forming a membrane layer on the substrate protection layer to cover the sacrificial layer; and forming a cavity by removing the sacrificial layer using a gas mixture comprising a halide-based gas and an oxygen-containing gas, wherein a mixture ratio of the halide-based gas to the oxygen-containing gas in the gas mixture is in a range from 1.5 to 2.4.

公开(公告)号：US11171628B2

公开(公告)日：2021-11-09

申请号：US15972694

申请日：2018-05-07

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Sung Sun Kim ,  Sang Kee Yoon ,  Chang Hyun Lim ,  Jin Suk Son ,  Ran Hee Shin ,  Je Hong Kyoung

IPC: H03H9/17 ,  H03H9/13 ,  H01L41/047 ,  H01L41/314 ,  H01L41/29 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05

Abstract: An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.

公开(公告)号：US10958237B2

公开(公告)日：2021-03-23

申请号：US16395287

申请日：2019-04-26

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Yoon Kim ,  Chang Hyun Lim ,  Sang Kee Yoon ,  Tae Kyung Lee ,  Moon Chul Lee ,  Tae Hun Lee

IPC: H03H9/02 ,  H03H9/17 ,  H03H9/13 ,  H03H9/54 ,  H03H3/02

Abstract: A bulk-acoustic wave resonator includes a substrate, a cavity formed in the substrate, a first electrode, a piezoelectric layer, and a second electrode stacked in order on the substrate, a resonator defined by the first electrode, the piezoelectric layer, and the second electrode overlapping in a vertical direction in an upper portion of the cavity, an additional layer disposed on one surface of the first electrode arranged in a wiring region on an external side of the resonator, and a wiring electrode connected to the first electrode arranged in the wiring region. The first electrode forms a contact interfacial surface with the additional layer and the wiring electrode.

公开(公告)号：US10778179B2

公开(公告)日：2020-09-15

申请号：US15788062

申请日：2017-10-19

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Tae Yoon Kim ,  Sang Kee Yoon ,  Chang Hyun Lim ,  Jong Woon Kim ,  Moon Chul Lee

IPC: H03H9/02 ,  H03H9/54 ,  H03H9/17 ,  H03H9/13 ,  H03H3/02 ,  H01L41/053 ,  H01L41/29 ,  H01L41/31

Abstract: An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

公开(公告)号：US10734968B2

公开(公告)日：2020-08-04

申请号：US15647660

申请日：2017-07-12

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Tae Yoon Kim ,  Dae Ho Kim ,  Chang Hyun Lim ,  Tae Hun Lee ,  Sang Kee Yoon ,  Jong Woon Kim ,  Won Han ,  Moon Chul Lee

IPC: H03H9/02 ,  H03H9/56 ,  H03H3/02 ,  H03H9/17 ,  H03H9/60 ,  H01L41/047 ,  H03H9/54

Abstract: A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 Å or less.