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101.发明申请公开(公告)号：US20220352114A1
公开(公告)日：2022-11-03
申请号：US17732930
申请日：2022-04-29
发明人： Ivan Nikitin , Peter Luniewski
摘要： A semiconductor module includes a substrate, a semiconductor die arranged on the substrate, at least one first bond wire loop, wherein both ends of the at least one first bond wire loop are arranged on and coupled to a first electrode of the semiconductor die, and a molded body encapsulating the semiconductor die, wherein a top portion of the at least one first bond wire loop is exposed from a first side of the molded body.
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公开(公告)号：US20220352048A1
公开(公告)日：2022-11-03
申请号：US17620342
申请日：2020-06-18
发明人： Christian Fachmann , Ingo Muri
IPC分类号： H01L23/31 , H01L21/78 , H01L21/304 , H01L21/02
摘要： A method of manufacturing semiconductor chips having a side wall sealing is described. The method includes forming dicing trenches in a semiconductor wafer. The side walls of the dicing trenches are anodized to generate an anodic oxide layer at the side walls of the dicing trenches. Semiconductor chips are separated from the semiconductor wafer.
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公开(公告)号：US20220344501A1
公开(公告)日：2022-10-27
申请号：US17859575
申请日：2022-07-07
IPC分类号： H01L29/778 , H01L29/20
摘要： An enhancement mode Group III nitride-based transistor device includes a body having a first surface and a Group III nitride barrier layer arranged on a Group III nitride channel layer and forming a heterojunction therebetween. A first cell field includes transistor cells and an edge region. Each transistor cell includes source, gate and drain fingers extending substantially parallel to one another on the first surface in a longitudinal direction. The gate finger, arranged laterally between the source and drain fingers, includes a p-doped Group III nitride finger arranged between a metallic gate finger and the first surface. The edge region surrounds the transistor cells and includes an edge termination structure having an isolation ring and a p-doped Group III nitride runner. The isolation ring locally interrupts the heterojunction. The runner, extending transversely to the longitudinal direction, is located laterally between the isolation ring and an end of the drain finger.
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公开(公告)号：US11476753B2
公开(公告)日：2022-10-18
申请号：US17307456
申请日：2021-05-04
摘要： A phase-shifted full bridge (PSFB) switching converter includes a transformer having a primary winding and a secondary winding; an input capacitor coupled to the primary winding via a first transistor full bridge; an output inductor coupled to the secondary winding via a synchronous rectifier circuit including at least one first transistor and at least one second transistor; and a controller circuit for generating switching signals for the rectifier circuit to operate the PSFB switching converter in reverse direction. During a startup phase, at the beginning of which the input capacitor is substantially discharged, the at least one first transistor is switched on in each switching cycle to allow an inductor current to pass from an output node, via the output inductor and the secondary winding, to a ground node, the at least one first transistor is again switched off when the inductor current reaches a threshold value.
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公开(公告)号：US11469678B2
公开(公告)日：2022-10-11
申请号：US17026578
申请日：2020-09-21
IPC分类号： H02M3/335
摘要： A power supply system comprises: a switched-capacitor converter, a transformer, and a voltage converter. The switched-capacitor converter includes multiple capacitors. The multiple capacitors are controllably switched in a circuit path including a primary winding of the transformer to convert the first voltage into a second voltage. The voltage converter converts the first voltage produced by the switched-capacitor converter into the second voltage that powers a load.
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公开(公告)号：US11462620B2
公开(公告)日：2022-10-04
申请号：US17098576
申请日：2020-11-16
发明人： Ralf Siemieniec , Oliver Blank , Franz Hirler , Michael Hutzler , David Laforet , Cédric Ouvrard , Li Juin Yip
IPC分类号： H01L29/66 , H01L21/336 , H01L29/40 , H01L29/78 , H01L29/06 , H01L29/739 , H01L29/423 , H01L29/08
摘要： A semiconductor device includes a semiconductor substrate, a transistor cell region formed in the semiconductor substrate and an inner termination region formed in the semiconductor substrate and devoid of transistor cells. The transistor cell region includes a gate structure extending from a first surface into the semiconductor substrate, a plurality of needle-shaped first field plate structures extending from the first surface into the semiconductor substrate, body regions of a second conductivity type, and source regions of a first conductivity type formed between the body regions and the first surface. The inner termination region surrounds the transistor cell region and includes needle-shaped second field plate structures extending from the first surface into the semiconductor substrate. The needle-shaped first field plate structures are arranged in a first pattern and the needle-shaped second field plate structures are arranged in a second pattern.
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公开(公告)号：US20220311433A1
公开(公告)日：2022-09-29
申请号：US17209450
申请日：2021-03-23
发明人： Daniele MIATTON , Sergio MORINI
IPC分类号： H03K17/567 , H03L7/08
摘要： A gate driver communication system includes a cored transformer including a primary coil and a secondary coil configured to receive power signals and uplink data signals from the primary coil; a primary side power signal generator coupled to the primary coil and configured to generate the power signals having a first frequency; a primary side data transmitter coupled to the primary coil and configured to generate the uplink data signals having a second frequency different from the first frequency; and a primary side controller configured to allocate the power signals and the uplink data signals to the primary coil according to a plurality of time slots, wherein the power signals are allocated to first time slots of the plurality of time slots and the uplink data signals are allocated to second times slots of the plurality of time slots.
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公开(公告)号：US20220301933A1
公开(公告)日：2022-09-22
申请号：US17206782
申请日：2021-03-19
发明人： Andreas Kitzler , John Cooper , Jakob Simon Dohr , Michael Knabl , Matic Krivec , Daniel Pieber
IPC分类号： H01L21/78 , H01L21/66 , H01L23/544
摘要： A method of processing a semiconductor wafer includes: forming a first metal layer or metal layer stack on a backside of the semiconductor wafer; forming a plating preventative layer on the first metal layer or metal layer stack, the plating preventative layer being formed at least over a kerf region of the semiconductor wafer and such that part of the first metal layer or metal layer stack is uncovered by the plating preventative layer, wherein the kerf region defines an area for dividing the semiconductor wafer along the kerf region into individual semiconductor dies; and plating a second metal layer or metal layer stack on the part of the first metal layer or metal layer stack uncovered by the plating preventative layer, wherein the plating preventative layer prevents plating of the second metal layer or metal layer stack over the kerf region.
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公开(公告)号：US20220285307A1
公开(公告)日：2022-09-08
申请号：US17687797
申请日：2022-03-07
发明人： Paul Frank , Thomas Heinelt , Oliver Schilling , Sven Schmidbauer , Frank Wagner
IPC分类号： H01L23/00
摘要： A semiconductor device includes a semiconductor wafer or a single semiconductor chip or die, and a layer stack. The layer stack comprises a first layer comprising NiSi, and a second layer comprising NiV, wherein the second layer is arranged between the first layer and the semiconductor wafer or single semiconductor chip or die.
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公开(公告)号：US20220271692A1
公开(公告)日：2022-08-25
申请号：US17181150
申请日：2021-02-22
发明人： Pablo YELAMOS RUIZ , Tao Zhao
IPC分类号： H02P6/10
摘要： An apparatus includes a controller. To control current through a motor winding, the controller monitors a magnitude of current supplied through the motor winding. The controller compares the magnitude of current to a threshold value. In response to detecting that the magnitude of current crosses the threshold value, the controller terminates a flow of the current through the motor winding. In one application, termination of the current through the motor winding supports more efficient use of energy to drive the motor winding. For example, via the controller, terminating the current through the motor winding to prevent the current from flowing in a reverse direction through the motor winding.
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