Pixel Structure and Method for Fabricating the Same
    101.
    发明申请
    Pixel Structure and Method for Fabricating the Same 有权
    像素结构及其制造方法

    公开(公告)号:US20100193827A1

    公开(公告)日:2010-08-05

    申请号:US12507935

    申请日:2009-07-23

    Applicant: Hsiang-Lin Lin

    Inventor: Hsiang-Lin Lin

    CPC classification number: H01L27/12 H01L27/124 H01L27/1248

    Abstract: A pixel structure includes a first patterned metal layer, a gate insulating layer, a semiconductor channel layer, a second patterned metal layer, a passivation layer, and a conducting layer. A gate line of the second patterned metal layer is electrically connected by the conducting layer to a gate extension electrode of the first patterned metal layer. A source electrode of the second patterned metal layer is electrically connected by the conducting layer to a second data line segment of the first patterned metal layer. A method for fabricating a pixel structure is also disclosed herein.

    Abstract translation: 像素结构包括第一图案化金属层,栅极绝缘层,半导体沟道层,第二图案化金属层,钝化层和导电层。 第二图案化金属层的栅极线通过导电层电连接到第一图案化金属层的栅极延伸电极。 第二图案化金属层的源电极通过导电层电连接到第一图案化金属层的第二数据线段。 本文还公开了一种用于制造像素结构的方法。

    PIXEL STRUCTURE
    102.
    发明申请
    PIXEL STRUCTURE 有权
    像素结构

    公开(公告)号:US20100187531A1

    公开(公告)日:2010-07-29

    申请号:US12725458

    申请日:2010-03-17

    CPC classification number: G02F1/133555 G02F1/136227 H01L27/124 H01L27/1248

    Abstract: A pixel structure including a gate, a gate dielectric layer, a patterned semiconductor layer having a channel area disposed above the gate, a patterned dielectric layer having an etching-stop layer disposed above the gate and a number of bumps, a patterned metal layer having a reflective pixel electrode, a source and a drain, an overcoat dielectric layer, and a transparent pixel electrode sequentially disposed on a substrate is provided. The source and the drain respectively cover portions of the channel area. The reflective pixel electrode connects the drain and covers the bumps to form an uneven surface. The overcoat dielectric layer disposed on a transistor constituted by the gate, the gate dielectric layer, the patterned semiconductor layer, the source and the drain has a contact opening exposing a portion of the reflective pixel electrode. The transparent pixel electrode is electrically connected to the reflective pixel electrode through the contact opening.

    Abstract translation: 一种像素结构,包括栅极,栅极电介质层,具有设置在栅极上方的沟道区域的图案化半导体层,具有设置在栅极上方的蚀刻停止层和多个凸起的图案化电介质层,具有 提供反射像素电极,源极和漏极,外涂层电介质层和顺序地设置在基板上的透明像素电极。 源极和漏极分别覆盖沟道区域的部分。 反射像素电极连接漏极并覆盖凸块以形成不平坦的表面。 设置在由栅极,栅极电介质层,图案化半导体层,源极和漏极构成的晶体管上的外涂层电介质层具有暴露反射像素电极的一部分的接触开口。 透明像素电极通过接触开口电连接到反射像素电极。

    PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF
    103.
    发明申请
    PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF 有权
    像素结构及其制造方法

    公开(公告)号:US20100144071A1

    公开(公告)日:2010-06-10

    申请号:US12704537

    申请日:2010-02-12

    Abstract: A method of manufacturing a pixel structure is provided. A first patterned conductive layer including a gate and a data line is formed on a substrate. A gate insulating layer is formed to cover the first patterned conductive layer and a semiconductor channel layer is formed on the gate insulating layer above the gate. A second patterned conductive layer including a scan line, a common line, a source and a drain is formed on the gate insulating layer and the semiconductor channel layer. The scan line is connected to the gate and the common line is located above the data line. The source and drain are located on the semiconductor channel layer, and the source is connected to the data line. A passivation layer is formed on the substrate to cover the second patterned conductive layer. A pixel electrode connected to the drain is formed on the passivation layer.

    Abstract translation: 提供了一种制造像素结构的方法。 在基板上形成包括栅极和数据线的第一图案化导电层。 形成栅极绝缘层以覆盖第一图案化导电层,并且在栅极上方的栅极绝缘层上形成半导体沟道层。 包括扫描线,公共线,源极和漏极的第二图案化导电层形成在栅极绝缘层和半导体沟道层上。 扫描线连接到栅极,公共线位于数据线上方。 源极和漏极位于半导体沟道层上,源极连接到数据线。 在衬底上形成钝化层以覆盖第二图案化导电层。 连接到漏极的像素电极形成在钝化层上。

    PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20100133542A1

    公开(公告)日:2010-06-03

    申请号:US12700678

    申请日:2010-02-04

    Abstract: A method of manufacturing a pixel structure is provided. A first patterned conductive layer including a gate and a data line is formed on a substrate. A gate insulating layer is formed to cover the first patterned conductive layer and a semiconductor channel layer is formed on the gate insulating layer above the gate. A second patterned conductive layer including a scan line, a common line, a source and a drain is formed on the gate insulating layer and the semiconductor channel layer. The scan line is connected to the gate and the common line is located above the data line. The source and drain are located on the semiconductor channel layer, and the source is connected to the data line. A passivation layer is formed on the substrate to cover the second patterned conductive layer. A pixel electrode connected to the drain is formed on the passivation layer.

    Pixel structure and liquid crystal display and method for manufacturing the same
    105.
    发明授权
    Pixel structure and liquid crystal display and method for manufacturing the same 有权
    像素结构和液晶显示及其制造方法

    公开(公告)号:US07623194B2

    公开(公告)日:2009-11-24

    申请号:US11382712

    申请日:2006-05-11

    Applicant: Hsiang-Lin Lin

    Inventor: Hsiang-Lin Lin

    Abstract: A pixel structure of a liquid crystal display (LCD) includes a scan line, a data line and a thin film transistor (TFT) disposed on the substrate. The TFT has a source electrically connected to the date line and a gate electrically connected to the scan line. A shielding electrode disposes on the substrate, wherein the same metal layer makes the shielding electrode, the source and the drain. Furthermore, the data line makes at least two different patterned metal, layers which are not formed simultaneously and the patterned metal layers are electrically connected to each other. A pixel electrode covers the part of the shielding electrode and electrically connects to the drain.

    Abstract translation: 液晶显示器(LCD)的像素结构包括设置在基板上的扫描线,数据线和薄膜晶体管(TFT)。 TFT具有电连接到日期线的源极和电连接到扫描线的栅极。 屏蔽电极配置在基板上,其中相同的金属层形成屏蔽电极,源极和漏极。 此外,数据线使得至少两个不同的图案化金属层不同时形成,并且图案化的金属层彼此电连接。 像素电极覆盖屏蔽电极的一部分并电连接到漏极。

    PIXEL STRUCTURE OF LIQUID CRYSTAL DISPLAY PANEL AND METHOD OF MAKING THE SAME
    106.
    发明申请
    PIXEL STRUCTURE OF LIQUID CRYSTAL DISPLAY PANEL AND METHOD OF MAKING THE SAME 有权
    液晶显示面板的像素结构及其制作方法

    公开(公告)号:US20090251628A1

    公开(公告)日:2009-10-08

    申请号:US12204809

    申请日:2008-09-05

    Applicant: Hsiang-Lin Lin

    Inventor: Hsiang-Lin Lin

    Abstract: A pixel structure of a liquid crystal display panel and the method thereof is provided. The gate electrode and data line of the pixel structure are formed by a first patterned conductive layer, the scan line is formed by a second patterned conductive layer, and the common electrode and the pixel electrode are formed on a substrate. The common electrode, the pixel electrode, and the insulating layer disposed therebetween compose a storage capacitor. Also, the pixel or the common electrode has a slit structure.

    Abstract translation: 提供了一种液晶显示面板的像素结构及其方法。 像素结构的栅电极和数据线由第一图案化导电层形成,扫描线由第二图案化导电层形成,并且公共电极和像素电极形成在基板上。 公共电极,像素电极和设置在其间的绝缘层组成存储电容器。 此外,像素或公共电极具有狭缝结构。

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