Metrology inspection apparatus
    101.
    发明授权

    公开(公告)号:US10697908B2

    公开(公告)日:2020-06-30

    申请号:US15574174

    申请日:2016-05-29

    申请人: XWINSYS LTD.

    摘要: The present disclosure provides a method and an apparatus for apparatus for inspecting a semiconductor wafer for abnormalities by accurately measuring elemental concentration at a target area. The apparatus includes an x-ray imaging subsystem for measuring an elemental composition at the target area of the semiconductor wafer. The apparatus further includes an edxrf subsystem for measuring an elemental concentration at the target area of the semiconductor wafer. The elemental concentration may be calibrated by first correlating the elemental concentration measurements obtained using x-ray imaging system for the target area with the elemental concentration measurements obtained using the edxrf subsystem for the target area to receive an augmented and accurate elemental concentration measurement for the target area of the semiconductor wafer.

    Method and apparatus for discriminating resin

    公开(公告)号:US10557808B2

    公开(公告)日:2020-02-11

    申请号:US15877942

    申请日:2018-01-23

    发明人: Hiroaki Furukawa

    摘要: A resin discriminating apparatus includes an X-ray tube which emits X-rays, an X-ray detector which detects X-rays emitted from a sample irradiated with X-rays, a data processing section which creates a spectrum on the basis of a detection signal obtained by the X-ray detector, a peak extraction section which extracts a spectral line due to Compton scattering and a spectral line due to Rayleigh scattering derived from a target element of the X-ray tube on the spectrum, and obtains a peak intensity, and a discrimination section which calculates a scattering intensity ratio which is a ratio of the Rayleigh scattering intensity to the Compton scattering intensity and discriminates the type of resin contained in the sample from the scattering intensity ratio.

    METROLOGY INSPECTION APPARATUS
    104.
    发明申请

    公开(公告)号:US20180128757A1

    公开(公告)日:2018-05-10

    申请号:US15574174

    申请日:2016-05-29

    申请人: XWINSYS LTD.

    摘要: The present disclosure provides a method and an apparatus for apparatus for inspecting a semiconductor wafer for abnormalities by accurately measuring elemental concentration at a target area. The apparatus includes an x-ray imaging subsystem for measuring an elemental composition at the target area of the semiconductor wafer. The apparatus further includes an edxrf subsystem for measuring an elemental concentration at the target area of the semiconductor wafer. The elemental concentration may be calibrated by first correlating the elemental concentration measurements obtained using x-ray imaging system for the target area with the elemental concentration measurements obtained using the edxrf subsystem for the target area to receive an augmented and accurate elemental concentration measurement for the target area of the semiconductor wafer.