公开(公告)号：US20150116965A1

公开(公告)日：2015-04-30

申请号：US14067677

申请日：2013-10-30

Applicant: Qualcomm Incorporated

Inventor： Chin-Kwan Kim ,  Omar James Bchir ,  Dong Wook Kim ,  Hong Bok We

IPC: H05K1/18 ,  H05K1/11

CPC classification number: H05K1/18 ,  H01L23/5383 ,  H01L23/5385 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/15192 ,  H01L2924/15313 ,  H05K1/11 ,  H01L2924/014

Abstract: Some novel features pertain to a substrate that includes a first dielectric layer and a bridge structure. The bridge structure is embedded in the first dielectric layer. The bridge structure is configured to provide an electrical connection between a first die and a second die. The first and second dies are configured to be coupled to the substrate. The bridge structure includes a first set of interconnects and a second dielectric layer. The first set of interconnects is embedded in the first dielectric layer. In some implementations, the bridge structure further includes a second set of interconnects. In some implementations, the second dielectric layer is embedded in the first dielectric layer. The some implementations, the first dielectric layer includes the first set of interconnects of the bridge structure, a second set of interconnects in the bridge structure, and a set of pads in the bridge structure.

Abstract translation: 一些新颖的特征涉及包括第一介电层和桥结构的基板。 桥结构嵌入在第一电介质层中。 桥结构构造成在第一管芯和第二管芯之间提供电连接。 第一和第二管芯被配置为耦合到衬底。 桥结构包括第一组互连和第二介电层。 第一组互连嵌入在第一介质层中。 在一些实现中，桥结构还包括第二组互连。 在一些实施方案中，第二介电层被嵌入在第一介电层中。 在一些实施方式中，第一介电层包括桥结构的第一组互连，桥结构中的第二组互连以及桥结构中的一组焊盘。