公开(公告)号：US12107035B2

公开(公告)日：2024-10-01

申请号：US17897556

申请日：2022-08-29

申请人： Amkor Technology Singapore Holding Pte. Ltd.

发明人： Jae Yun Kim ,  Gi Tae Lim ,  Woon Kab Jung ,  Ju Hoon Yoon ,  Dong Joo Park ,  Byong Woo Cho ,  Gyu Wan Han ,  Ji Young Chung ,  Jin Seong Kim ,  Do Hyun Na

IPC分类号： H01L23/498 ,  H01L21/50 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538

CPC分类号： H01L23/49811 ,  H01L21/50 ,  H01L23/3128 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/5389 ,  H01L24/92 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/131 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/73253 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/8321 ,  H01L2224/92225 ,  H01L2224/92242 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2224/8321 ,  H01L2924/00014 ,  H01L2224/83203 ,  H01L2924/00014 ,  H01L2224/2929 ,  H01L2924/0665 ,  H01L2224/2919 ,  H01L2924/0665 ,  H01L2224/293 ,  H01L2924/00014 ,  H01L2224/92242 ,  H01L2224/81 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2224/1329 ,  H01L2924/00014 ,  H01L2224/133 ,  H01L2924/00014

摘要： A method of manufacturing a semiconductor device having a semiconductor die within an extended substrate and a bottom substrate may include bonding a bottom surface of a semiconductor die to a top surface of a bottom substrate, forming an adhering member to a top surface of the semiconductor die, bonding an extended substrate to the semiconductor die and to the top surface of the bottom substrate utilizing the adhering member and a conductive bump on a bottom surface of the extended substrate and a conductive bump on the bottom substrate. The semiconductor die and the conductive bumps may be encapsulated utilizing a mold member. The conductive bump on the bottom surface of the extended substrate may be electrically connected to a terminal on the top surface of the extended substrate. The adhering member may include a laminate film, a non-conductive film adhesive, or a thermal hardening liquid adhesive.

公开(公告)号：US12100611B2

公开(公告)日：2024-09-24

申请号：US18389577

申请日：2023-11-14

申请人： Monolithic 3D Inc.

发明人： Zvi Or-Bach ,  Brian Cronquist ,  Deepak C. Sekar

IPC分类号： H01L21/683 ,  G11C8/16 ,  H01L21/74 ,  H01L21/762 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8238 ,  H01L21/84 ,  H01L23/48 ,  H01L23/525 ,  H01L27/02 ,  H01L27/06 ,  H01L27/092 ,  H01L27/10 ,  H01L27/105 ,  H01L27/118 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H10B10/00 ,  H10B12/00 ,  H10B20/00 ,  H10B41/20 ,  H10B41/40 ,  H10B41/41 ,  H10B43/20 ,  H10B43/40 ,  H01L23/00 ,  H01L23/367 ,  H01L25/00 ,  H01L25/065 ,  H10B20/20

CPC分类号： H01L21/6835 ,  G11C8/16 ,  H01L21/743 ,  H01L21/76254 ,  H01L21/76898 ,  H01L21/8221 ,  H01L21/823828 ,  H01L21/84 ,  H01L23/481 ,  H01L23/5252 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/10 ,  H01L27/105 ,  H01L27/11807 ,  H01L27/11898 ,  H01L27/1203 ,  H01L29/4236 ,  H01L29/66272 ,  H01L29/66621 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/66901 ,  H01L29/78 ,  H01L29/7841 ,  H01L29/7843 ,  H01L29/7881 ,  H01L29/792 ,  H10B10/00 ,  H10B10/125 ,  H10B12/053 ,  H10B12/09 ,  H10B12/20 ,  H10B12/50 ,  H10B20/00 ,  H10B41/20 ,  H10B41/40 ,  H10B41/41 ,  H10B43/20 ,  H10B43/40 ,  H01L23/3677 ,  H01L24/13 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/1214 ,  H01L27/1266 ,  H01L2221/68368 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/83894 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00011 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01066 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12033 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H10B12/05 ,  H10B20/20

摘要： A method for producing 3D semiconductor devices including: providing a first level including first transistors and a first single crystal layer; forming a first metal layer on top of the first level; forming a second metal layer on top of the first metal layer; forming at least one second level on top of or above the second metal layer; performing a lithography step on the second level; forming at least one third level on top of or above the second level; performing processing steps to form first memory cells within the second level and second memory cells within the third level, where the first memory cells include at least one second transistor, the second memory cells include at least one third transistor, second transistors comprise gate electrodes comprising metal, and then forming at least four independent memory arrays which include some first memory cells and/or second memory cells.

公开(公告)号：US12094853B2

公开(公告)日：2024-09-17

申请号：US17963729

申请日：2022-10-11

申请人： ADVANCED MICRO DEVICES, INC. ,  ATI TECHNOLOGIES ULC

发明人： Bryan Black ,  Michael Z. Su ,  Gamal Refai-Ahmed ,  Joe Siegel ,  Seth Prejean

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L25/065

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/0233 ,  H01L2224/02331 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05095 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05169 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/17181 ,  H01L2225/06548 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/14 ,  H01L2924/00

摘要： A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

公开(公告)号：US12033884B2

公开(公告)日：2024-07-09

申请号：US18542983

申请日：2023-12-18

申请人： Monolithic 3D Inc.

发明人： Zvi Or-Bach ,  Brian Cronquist ,  Deepak C. Sekar

IPC分类号： H01L21/74 ,  G11C8/16 ,  H01L21/683 ,  H01L21/762 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8238 ,  H01L21/84 ,  H01L23/48 ,  H01L23/525 ,  H01L27/02 ,  H01L27/06 ,  H01L27/092 ,  H01L27/10 ,  H01L27/105 ,  H01L27/118 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H10B10/00 ,  H10B12/00 ,  H10B20/00 ,  H10B41/20 ,  H10B41/40 ,  H10B41/41 ,  H10B43/20 ,  H10B43/40 ,  H01L23/00 ,  H01L23/367 ,  H01L25/00 ,  H01L25/065 ,  H10B20/20

CPC分类号： H01L21/6835 ,  G11C8/16 ,  H01L21/743 ,  H01L21/76254 ,  H01L21/76898 ,  H01L21/8221 ,  H01L21/823828 ,  H01L21/84 ,  H01L23/481 ,  H01L23/5252 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/10 ,  H01L27/105 ,  H01L27/11807 ,  H01L27/11898 ,  H01L27/1203 ,  H01L29/4236 ,  H01L29/66272 ,  H01L29/66621 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/66901 ,  H01L29/78 ,  H01L29/7841 ,  H01L29/7843 ,  H01L29/7881 ,  H01L29/792 ,  H10B10/00 ,  H10B10/125 ,  H10B12/053 ,  H10B12/09 ,  H10B12/20 ,  H10B12/50 ,  H10B20/00 ,  H10B41/20 ,  H10B41/40 ,  H10B41/41 ,  H10B43/20 ,  H10B43/40 ,  H01L23/3677 ,  H01L24/13 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/1214 ,  H01L27/1266 ,  H01L2221/68368 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/83894 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00011 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01066 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12033 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H10B12/05 ,  H10B20/20

摘要： A method for producing 3D semiconductor devices including: providing a first level including first transistors and a first single crystal layer; forming a first metal layer on top of the first level; forming a second metal layer on top of the first metal layer; forming at least one (ALO) second level on top of or above the second metal layer; performing a lithography step on the second level; forming ALO third level on top of or above the ALO second level; performing processing steps to form first memory cells within the ALO second level and second memory cells within the ALO third level, first memory cells include ALO second transistor, second memory cells include ALO third transistor, first metal layer thickness is at least 50% greater than the second metal layer thickness, ALO first transistor controls power delivery to ALO second transistor; then dicing using a laser system.

公开(公告)号：US20240194627A1

公开(公告)日：2024-06-13

申请号：US18584488

申请日：2024-02-22

申请人： Samsung Electronics Co., Ltd.

发明人： Seungmin Baek

IPC分类号： H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/13 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L25/00 ,  H01L25/10

CPC分类号： H01L24/20 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/568 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/19 ,  H01L25/105 ,  H01L25/50 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/2101 ,  H01L2224/2105 ,  H01L2224/211 ,  H01L2224/214 ,  H01L2224/215 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/92125 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/0133 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/15311 ,  H01L2924/1533 ,  H01L2924/19107

摘要： A semiconductor device may include a seed structure on a complex structure. The seed structure may include a first barrier layer, a first seed layer on the first barrier layer, a second barrier layer on the first seed layer, and a second seed layer on the second barrier layer. The second barrier layer may contact a side surface of at least one of the first barrier layer and the first seed layer. An electrode layer may be disposed on the seed structure.

公开(公告)号：US12009289B2

公开(公告)日：2024-06-11

申请号：US17501857

申请日：2021-10-14

申请人： Amkor Technology Singapore Holding Pte Ltd.

发明人： Jae Ung Lee ,  Yung Woo Lee ,  EunNaRa Cho ,  Dong Hyun Bang ,  Wook Choi ,  KooWoong Jeong ,  Byong Jin Kim ,  Min Chul Shin ,  Ho Jeong Lim ,  Ji Hyun Kim ,  Chang Hun Kim

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L23/13 ,  H01L23/31 ,  H01L23/50 ,  H01L23/538 ,  H01L25/065 ,  H01L25/16

CPC分类号： H01L23/49838 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/13 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L25/16 ,  H01L23/3128 ,  H01L23/50 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/0401 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/15159 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19103 ,  H01L2924/19106 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2924/00014

摘要： A semiconductor package and a method of manufacturing a semiconductor package. As a non-limiting example, various aspects of this disclosure provide a semiconductor package, and method of manufacturing thereof, that comprises a substrate having a first surface and a second surface opposite to the first surface, and comprising at least one first recess portion formed in a direction ranging from the first surface toward the second surface, a plurality of first recess conductive patterns formed in the first recess portion, and a first passive element inserted into the first recess portion of the substrate and having a first electrode and a second electrode electrically connected to the plurality of first recess conductive patterns.

公开(公告)号：US20240186292A1

公开(公告)日：2024-06-06

申请号：US18406403

申请日：2024-01-08

申请人： Amkor Technology Singapore Holding Pte. Ltd.

发明人： Do Hyung Kim ,  Jung Soo Park ,  Seung Chul Han

IPC分类号： H01L25/065 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L23/544 ,  H01L25/00 ,  H01L25/10

CPC分类号： H01L25/0657 ,  H01L21/4867 ,  H01L21/563 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3157 ,  H01L23/3185 ,  H01L23/3192 ,  H01L23/49811 ,  H01L23/538 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/00 ,  H01L24/12 ,  H01L24/81 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L23/49816 ,  H01L23/544 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2223/54406 ,  H01L2223/54433 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/73204 ,  H01L2224/81 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83005 ,  H01L2224/83102 ,  H01L2224/97 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06586 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2924/1531 ,  H01L2924/18161

摘要： A semiconductor package using a coreless signal distribution structure (CSDS) is disclosed and may include a CSDS comprising at least one dielectric layer, at least one conductive layer, a first surface, and a second surface opposite to the first surface. The semiconductor package may also include a first semiconductor die having a first bond pad on a first die surface, where the first semiconductor die is bonded to the first surface of the CSDS via the first bond pad, and a second semiconductor die having a second bond pad on a second die surface, where the second semiconductor die is bonded to the second surface of the CSDS via the second bond pad. The semiconductor package may further include a metal post electrically coupled to the first surface of the CSDS, and a first encapsulant material encapsulating side surfaces and a surface opposite the first die surface of the first semiconductor die, the metal post, and a portion of the first surface of the CSDS.

公开(公告)号：US11990435B2

公开(公告)日：2024-05-21

申请号：US17867287

申请日：2022-07-18

申请人： Amkor Technology Singapore Holding Pte. Ltd.

发明人： Sung Sun Park ,  Ji Young Chung ,  Christopher Berry

IPC分类号： G06V40/13 ,  B81C3/00 ,  H01L23/00 ,  H01L23/053 ,  H01L23/31

CPC分类号： H01L24/05 ,  B81C3/00 ,  G06V40/13 ,  G06V40/1329 ,  H01L23/053 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L23/3128 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/27 ,  H01L24/29 ,  H01L24/33 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/16227 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/27622 ,  H01L2224/2784 ,  H01L2224/29006 ,  H01L2224/29007 ,  H01L2224/29011 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29299 ,  H01L2224/2939 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/8146 ,  H01L2224/81464 ,  H01L2224/81466 ,  H01L2224/81471 ,  H01L2224/81484 ,  H01L2224/81815 ,  H01L2224/8185 ,  H01L2224/83101 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/9211 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2924/014 ,  H01L2924/1815 ,  H01L2924/18161 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01082 ,  H01L2224/13111 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2224/13111 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2224/13111 ,  H01L2924/01029 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2224/13111 ,  H01L2924/01079 ,  H01L2224/13111 ,  H01L2924/01083 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/01083 ,  H01L2224/13111 ,  H01L2924/0103 ,  H01L2224/13111 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2224/11334 ,  H01L2924/00014 ,  H01L2224/1146 ,  H01L2924/00014 ,  H01L2224/1132 ,  H01L2924/00014 ,  H01L2224/11849 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/0345 ,  H01L2924/00014 ,  H01L2224/03464 ,  H01L2924/00014 ,  H01L2224/03452 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2924/00014 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/05139 ,  H01L2924/00014 ,  H01L2224/05144 ,  H01L2924/00014 ,  H01L2224/05155 ,  H01L2924/00014 ,  H01L2224/0347 ,  H01L2924/00014 ,  H01L2224/1147 ,  H01L2924/00014 ,  H01L2224/05666 ,  H01L2924/01074 ,  H01L2224/05671 ,  H01L2924/00014 ,  H01L2224/05666 ,  H01L2924/01028 ,  H01L2224/0361 ,  H01L2924/00014 ,  H01L2224/119 ,  H01L2224/034 ,  H01L2224/1147 ,  H01L2224/034 ,  H01L2224/114 ,  H01L2224/0361 ,  H01L2224/13294 ,  H01L2924/00014 ,  H01L2224/133 ,  H01L2924/014 ,  H01L2224/81203 ,  H01L2924/00014 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2224/2919 ,  H01L2924/0665 ,  H01L2224/2929 ,  H01L2924/0665 ,  H01L2224/2919 ,  H01L2924/07025 ,  H01L2224/2929 ,  H01L2924/07025 ,  H01L2224/2919 ,  H01L2924/069 ,  H01L2224/2929 ,  H01L2924/069 ,  H01L2224/83102 ,  H01L2924/00014 ,  H01L2224/83101 ,  H01L2924/00014 ,  H01L2224/9211 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/29294 ,  H01L2924/00014 ,  H01L2224/2939 ,  H01L2924/00014 ,  H01L2224/29299 ,  H01L2924/00014 ,  H01L2224/27622 ,  H01L2924/00014 ,  H01L2224/2732 ,  H01L2924/00014 ,  H01L2224/27312 ,  H01L2924/00014 ,  H01L2224/81447 ,  H01L2924/00014 ,  H01L2224/81424 ,  H01L2924/00014 ,  H01L2224/81455 ,  H01L2924/00014 ,  H01L2224/8146 ,  H01L2924/00014 ,  H01L2224/81439 ,  H01L2924/00014 ,  H01L2224/81464 ,  H01L2924/00014 ,  H01L2224/81484 ,  H01L2924/00014 ,  H01L2224/81444 ,  H01L2924/00014 ,  H01L2224/81466 ,  H01L2924/00014 ,  H01L2224/81471 ,  H01L2924/00014 ,  H01L2224/8185 ,  H01L2924/00012 ,  H01L2224/05166 ,  H01L2924/00014 ,  H01L2224/05684 ,  H01L2924/00014

摘要： A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise a sensing area on a bottom side of a die without top side electrodes that senses fingerprints from the top side, and/or that comprise a sensor die directly electrically connected to conductive elements of a plate through which fingerprints are sensed.

公开(公告)号：US11990382B2

公开(公告)日：2024-05-21

申请号：US17865994

申请日：2022-07-15

申请人： Adeia Semiconductor Technologies LLC

发明人： Rajesh Katkar

IPC分类号： H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L23/00 ,  H01L23/498 ,  H01L25/10

CPC分类号： H01L23/3107 ,  H01L21/4853 ,  H01L21/561 ,  H01L21/566 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/94 ,  H01L24/97 ,  H01L25/10 ,  H01L21/4857 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/83 ,  H01L24/92 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73253 ,  H01L2224/83005 ,  H01L2224/92242 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2224/97 ,  H01L2224/83 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/2919 ,  H01L2924/00014

摘要： A microelectronic assembly having a first side and a second side opposite therefrom is disclosed. The microelectronic assembly may include a microelectronic element having a first face, a second face opposite the first face, a plurality of sidewalls each extending between the first and second faces, and a plurality of element contacts. The microelectronic assembly may also include an encapsulation adjacent the sidewalls of the microelectronic element. The microelectronic assembly may include electrically conductive connector elements each having a first end, a second end remote from the first end, and an edge surface extending between the first and second ends, wherein one of the first end or the second end of each connector element is adjacent the first side of the package. The microelectronic assembly may include a redistribution structure having terminals, the redistribution structure adjacent the second side of the package, the terminals being electrically coupled with the connector elements.

公开(公告)号：US20240154639A1

公开(公告)日：2024-05-09

申请号：US18508159

申请日：2023-11-13

申请人： SKYWORKS SOLUTIONS, INC.

发明人： James Phillip YOUNG

IPC分类号： H04B1/40 ,  H01L23/00 ,  H01L23/498 ,  H01L23/66 ,  H01L25/065

CPC分类号： H04B1/40 ,  H01L23/49827 ,  H01L23/66 ,  H01L24/92 ,  H01L25/0655 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L2223/6616 ,  H01L2223/6655 ,  H01L2223/6677 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/92222 ,  H01L2924/15311

摘要： Devices and methods related to radio-frequency (RF) filters on silicon-on-insulator (SOI) substrate. In some embodiments, an RF device can include a silicon die such as an SOI die including a first side and a second side. The silicon die can further include a plurality of vias, with each via configured to provide an electrical connection between the first side and the second side of the silicon die. The RF device can further include at least one RF flip chip mounted on the first side of the silicon die. The silicon die can include, for example, an RF circuit such as a switch circuit, and the RF flip chip can include, for example, a filter such as a surface acoustic wave (SAW) filter.