公开(公告)号：US11036324B2

公开(公告)日：2021-06-15

申请号：US16830795

申请日：2020-03-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Masami Jintyou ,  Yasuharu Hosaka ,  Naoto Goto ,  Takahiro Iguchi ,  Daisuke Kurosaki ,  Junichi Koezuka

IPC: G06F3/041 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L27/32 ,  H01L29/66 ,  G06F3/044

Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

公开(公告)号：US11024742B2

公开(公告)日：2021-06-01

申请号：US16789830

申请日：2020-02-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masami Jintyou ,  Yasutaka Nakazawa ,  Yukinori Shima

IPC: H01L29/786 ,  H01L27/12

Abstract: The stability of steps of processing a wiring formed using copper or the like is increased. The concentration of impurities in a semiconductor film is reduced. Electrical characteristics of a semiconductor device are improved. A semiconductor device includes a semiconductor film, a pair of first protective films in contact with the semiconductor film, a pair of conductive films containing copper or the like in contact with the pair of first protective films, a pair of second protective films in contact with the pair of conductive films on the side opposite the pair of first protective films, a gate insulating film in contact with the semiconductor film, and a gate electrode overlapping with the semiconductor film with the gate insulating film therebetween. In a cross section, side surfaces of the pair of second protective films are located on the outer side of side surfaces of the pair of conductive films.

公开(公告)号：US11011648B2

公开(公告)日：2021-05-18

申请号：US16658196

申请日：2019-10-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423

Abstract: A semiconductor device with favorable electric characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The oxide semiconductor layer includes a region in contact with the first insulating layer, the first conductive layer is connected to the oxide semiconductor layer, and the second conductive layer is connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween. The first region and the second region include a region having a higher carbon concentration than the third region.

公开(公告)号：US10886413B2

公开(公告)日：2021-01-05

申请号：US16515283

申请日：2019-07-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Sato ,  Yasutaka Nakazawa ,  Takayuki Cho ,  Shunsuke Koshioka ,  Hajime Tokunaga ,  Masami Jintyou

IPC: H01L29/786 ,  H01L29/10 ,  H01L21/02 ,  H01L21/465 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/32 ,  H01L29/04 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L21/306 ,  H01L29/66

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US10886143B2

公开(公告)日：2021-01-05

申请号：US16787110

申请日：2020-02-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masami Jintyou ,  Junichi Koezuka ,  Takashi Hamochi ,  Yasuharu Hosaka

IPC: H01L21/00 ,  H01L21/385 ,  H01L21/02 ,  H01L21/44 ,  H01L21/443 ,  H01L21/4757 ,  H01L29/04 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  H01L29/51

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

公开(公告)号：US20200168738A1

公开(公告)日：2020-05-28

申请号：US16776856

申请日：2020-01-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Daisuke Kurosaki

IPC: H01L29/786 ,  H01L29/49 ,  H01L27/12

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is inhibited and reliability is improved. The transistor includes a first gate electrode; a first insulating film over the first gate electrode; an oxide semiconductor film over the first insulating film; a source electrode electrically connected to the oxide semiconductor film; a drain electrode electrically connected to the oxide semiconductor film; a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and a second gate electrode over the second insulating film. The second insulating film includes oxygen. The second gate electrode includes the same metal element as at least one of metal elements of the oxide semiconductor film and has a region thinner than the oxide semiconductor film.

公开(公告)号：US20190326420A1

公开(公告)日：2019-10-24

申请号：US16429194

申请日：2019-06-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/66 ,  H01L29/49 ,  H01L29/786 ,  H01L29/423 ,  H01L21/02

Abstract: Provided is a method for manufacturing a semiconductor device whose electric characteristics are prevented from being varied and whose reliability is improved. In the method, an insulating film is formed over an oxide semiconductor film, a buffer film is formed over the insulating film, oxygen is added to the buffer film and the insulating film, a conductive film is formed over the buffer film to which oxygen is added, and an impurity element is added to the oxide semiconductor film using the conductive film as a mask. An insulating film containing hydrogen and overlapping with the oxide semiconductor film may be formed after the impurity element is added to the oxide semiconductor film.

公开(公告)号：US10431600B2

公开(公告)日：2019-10-01

申请号：US15819201

申请日：2017-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Kenichi Okazaki ,  Daisuke Kurosaki ,  Masami Jintyou ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A method for manufacturing a highly reliable semiconductor device is provided. The method includes the steps of: forming an oxide semiconductor film at a first temperature; processing the oxide semiconductor film into an island shape; not performing a process at a temperature higher than the first temperature, but depositing a material to be source and drain electrodes by a sputtering method; processing the material to form the source and drain electrodes; forming a protective insulating film, and then forming a first barrier film; adding excess oxygen or oxygen radicals to the protective insulating film through the first barrier film; performing heat treatment at a second temperature lower than 400° C. to diffuse the excess oxygen or oxygen radicals into the oxide semiconductor film; and removing part of the first barrier film and part of the protective insulating film by wet etching, and then forming a second barrier film.

公开(公告)号：US10361318B2

公开(公告)日：2019-07-23

申请号：US15785562

申请日：2017-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Sato ,  Yasutaka Nakazawa ,  Takayuki Cho ,  Shunsuke Koshioka ,  Hajime Tokunaga ,  Masami Jintyou

IPC: H01L29/786 ,  H01L29/10 ,  H01L21/02 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/32 ,  H01L29/04 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L21/306 ,  H01L29/66 ,  H01L21/465

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US10134914B2

公开(公告)日：2018-11-20

申请号：US15451804

申请日：2017-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  G02F1/1368 ,  G02F1/1333 ,  H01L27/32

Abstract: To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, and a third oxide semiconductor film over the second oxide semiconductor film. The first to third oxide semiconductor films contain the same element. The second oxide semiconductor film includes a region where the crystallinity is lower than the crystallinity of one or both of the first oxide semiconductor film and the third oxide semiconductor film.