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    Quantum dot device and quantum dots
    111.
    发明授权
    Quantum dot device and quantum dots 有权

    公开(公告)号：US11569468B2

    公开(公告)日：2023-01-31

    申请号：US17193283

    申请日：2021-03-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin A Kim ,  Yuho Won ,  Sung Woo Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

    IPC: H01L51/50

    Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.

    Electroluminescent device, and display device comprising same
    115.
    发明授权
    Electroluminescent device, and display device comprising same 有权

    公开(公告)号：US11495764B2

    公开(公告)日：2022-11-08

    申请号：US17026622

    申请日：2020-09-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Ho Kim ,  Moon Gyu Han ,  Hongkyu Seo ,  Heejae Lee ,  Eun Joo Jang

    IPC: H01L51/50 ,  C09K11/06 ,  H01L51/00

    Abstract: An electroluminescent device and a display device including the same are disclosed, wherein the electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode; a light emitting layer including a first light emitting layer disposed on the hole transport layer, the first emitting layer including a first quantum dot, and a second light emitting layer including a second quantum dot and an n-type organic semiconductor, the second light emitting layer disposed on the first light emitting layer; an electron transport layer disposed on the second light emitting layer; and a second electrode disposed on the electron transport layer.

    Light emitting device, production method thereof, and display device including the same
    117.
    发明授权
    Light emitting device, production method thereof, and display device including the same 有权

    公开(公告)号：US11482686B2

    公开(公告)日：2022-10-25

    申请号：US17085167

    申请日：2020-10-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kwanghee Kim ,  Moon Gyu Han ,  Eun Joo Jang ,  Hyo Sook Jang

    IPC: H01L29/06 ,  H01L51/50 ,  H01L51/56 ,  C09K11/02 ,  C09K11/88 ,  B82Y40/00 ,  B82Y20/00

    Abstract: A light emitting device including a first electrode and a second electrode spaced from each other, and, a light emitting film between the first electrode and the second electrode, wherein the light emitting film has a first surface facing the second electrode and a second surface opposite thereto, the light emitting film includes a quantum dot layer including a plurality of quantum dots and a matrix including a metal chalcogenide, the plurality of quantum dots includes selenium, the matrix covers at least a portion of the quantum dot layer, the metal chalcogenide comprises zinc and sulfur, and in an X-ray photoelectron spectroscopic analysis of the first surface of the light emitting film, a mole ratio of zinc with respect to selenium is greater than or equal to about 2:1 and a mole ratio of sulfur with respect to selenium is greater than or equal to about 1.1:1.

    Electroluminescent device, and display device comprising thereof
    118.
    发明授权
    Electroluminescent device, and display device comprising thereof 有权

    公开(公告)号：US11424425B2

    公开(公告)日：2022-08-23

    申请号：US17062162

    申请日：2020-10-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sujin Park ,  Yuho Won ,  Eun Joo Jang ,  Dae Young Chung ,  Sung Woo Kim ,  Jin A Kim ,  Yong Seok Han

    IPC: H01L51/50 ,  H01L51/00

    Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, each of the first and second quantum dots has a core-shell structure including one or more shells, and the first and second quantum dots have different numbers of shells from each other or have different total thicknesses of the one or more shells from each other.

    Semiconductor nanocrystal particles and devices including the same
    119.
    发明授权
    Semiconductor nanocrystal particles and devices including the same 有权

    公开(公告)号：US11319487B2

    公开(公告)日：2022-05-03

    申请号：US15976197

    申请日：2018-05-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jeong Hee Lee ,  Eun Joo Jang ,  Hyun A Kang ,  Tae Hyung Kim

    IPC: C09K11/88 ,  C09K11/56 ,  C09K11/02 ,  B82Y20/00 ,  B82Y40/00 ,  H01L51/50

    Abstract: A semiconductor nanocrystal particle including zinc (Zn), tellurium (Te) and selenium (Se), a method of producing the same, and an electronic device including the same are disclosed. In the semiconductor nanocrystal particle, an amount of the tellurium is less than an amount of the selenium, the particle includes a core including a first semiconductor material including zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and including a second semiconductor material having a different composition from the first semiconductor material, and the semiconductor nanocrystal particle emits blue light including a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

    Light emitting device and display device including the same
    120.
    发明授权
    Light emitting device and display device including the same 有权

    公开(公告)号：US11205761B2

    公开(公告)日：2021-12-21

    申请号：US16832004

    申请日：2020-03-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kwanghee Kim ,  Dae Young Chung ,  Tae Hyung Kim ,  Eun Joo Jang ,  Moon Gyu Han

    IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00

    Abstract: An electroluminescent device including a first electrode and a second electrode facing each other, and a quantum dot emission layer disposed between the first electrode and the second electrode and a method of manufacturing the same. The quantum dot emission layer does not include cadmium and lead, the quantum dot emission layer includes a first layer including first quantum dots, facing the first electrode, a second layer including second quantum dots, facing the second electrode, and a third layer including third quantum dots, disposed between the first layer and the second layer, wherein a highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the layer and the highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the second layer.

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