公开(公告)号：US4794610A

公开(公告)日：1988-12-27

申请号：US13436

申请日：1987-02-11

申请人： Werner Schairer ,  Jochen Gerner

发明人： Werner Schairer ,  Jochen Gerner

IPC分类号： H01S5/16 ,  H01S5/22 ,  H01S3/19

CPC分类号： H01S5/16 ,  H01S5/2202

摘要： The invention relates to a heterostructure semiconductor laser diode with a layer sequence formed on a substrate, wherein a laser-active zone is arranged between layers of respectively opposite conductivity types, wherein an additional layer having a cover layer disposed thereon, and both of the same conductivity type as the substrate, are formed on the side of the layer sequence facing away from the substrate, and wherein a semiconductor area doped oppositely to the cover layer is produced by diffusion in the cover layer and penetrates, in a strip-shaped zone extending perpendicularly to the exit surface of the laser radiation in the area of the plane of symmetry below a v-groove-shaped recess, the boundary plane between the cover layer and the adjacent additional layer and extends into but not through the layer arranged thereunder, whereby the current flowing in the forward direction of the semiconductor laser diode is confined to a narrow strip-shaped area of the laser-active layer. The amplifying area of the laser-active is made significantly shorter in its length-wise dimensions than the resonator length of the semiconductor laser diode by the laser-active layer extending in a small area of the resonator length immediately in front of the two mirrors of the semiconductor laser diode at an incline to the main plane of the laser-active layer and by the v-groove-shaped recess being symmetrically shortened by the amount of this small area in relation to the resonator length.

摘要翻译： 本发明涉及一种具有形成在衬底上的层序列的异质结构半导体激光二极管，其中激光活性区布置在分别相反的导电类型的层之间，其中具有设置在其上的覆盖层的附加层以及两者相同 导电类型作为衬底，形成在层序列背离衬底的一侧，并且其中通过在覆盖层中的扩散而产生与覆盖层相反地掺杂的半导体区域，并且穿过覆盖层的带状区域 垂直于激光辐射的出口表面，在V形槽凹部下面的对称平面的区域中，覆盖层和相邻的附加层之间的边界平面延伸到但不穿过其下布置的层，由此 在半导体激光二极管的正向流动的电流被限制在激光有源层的窄条状区域。 激光有源的放大区域的长度方面的尺寸明显短于半导体激光二极管的谐振器长度，激光有源层在紧邻两个反射镜的前面的谐振器长度的小区域中延伸的激光有源层 半导体激光二极管以激光有源层的主平面倾斜并且通过v形槽形凹槽对称地缩短相对于谐振器长度的该小面积的量。

公开(公告)号：US4733399A

公开(公告)日：1988-03-22

申请号：US856937

申请日：1986-04-25

申请人： Yutaka Mihashi ,  Yutaka Nagai

发明人： Yutaka Mihashi ,  Yutaka Nagai

IPC分类号： H01S5/00 ,  H01S5/026 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/22 ,  H01S3/19

CPC分类号： H01S5/06203 ,  H01S5/0425 ,  H01S5/2202

摘要： A semiconductor laser device comprises a semiconductor laser portion (17) including a double hetero structure and a vertical MIS-FET portion (18) form on, and in series with, the semiconductor laser portion (17). The vertical MIS-FET portion (18) includes an n-type GaAs layer (6), a p-type GaAs layer (7), an n-type GaAs layer (8), and a striped groove (31) having V-shaped cross-section formed from the top surface of the n-type GaAs layer (8) to the n-type GaAs layer (6). A metal gate electrode (11) is further provided on the top surface of the striped groove (31), on an insulating film (10). A current (41)flowing through the vertical MIS-FET portion (18) is changed according to a photo modulating signal applied to the metal gate electrode (11) and, a current (40) is also changed according to the current (41). Accordingly, a laser oscillation output of the semiconductor laser portion (17) is also changed to accomplish the optical output modulation of the semiconductor laser.

摘要翻译： 一种半导体激光器件包括：半导体激光器部分（17），包括双异质结构和与半导体激光器部分（17）形成并串联的垂直MIS-FET部分（18）。 垂直MIS-FET部分（18）包括n型GaAs层（6），p型GaAs层（7），n型GaAs层（8）和具有V型GaAs层的条纹槽（31） 形成由n型GaAs层（8）的顶面到n型GaAs层（6）的截面。 在绝缘膜（10）上，在条纹槽（31）的上表面上还设有金属栅电极（11）。 流过垂直MIS-FET部分（18）的电流（41）根据施加到金属栅极（11）的光调制信号而改变，并且电流（40）也根据电流（41）而改变， 。 因此，半导体激光器部分（17）的激光振荡输出也被改变以实现半导体激光器的光输出调制。

公开(公告)号：US4558448A

公开(公告)日：1985-12-10

申请号：US412052

申请日：1982-08-27

申请人： Johannes A. dePoorter ,  Peter J. deWaard ,  Rudolf P. Tijburg ,  Gerardus L. Dinghs

发明人： Johannes A. dePoorter ,  Peter J. deWaard ,  Rudolf P. Tijburg ,  Gerardus L. Dinghs

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S3/19

CPC分类号： H01S5/20 ,  H01S5/162 ,  H01S5/2059 ,  H01S5/2202

摘要： A semiconductor laser having mirror faces serving as resonators, in which the active laser region includes end zones adjoining the mirror faces which have implanted ions, preferably protons, with associated crystal damage. The end zones have a length which is at least equal to the diffusion length of the recombining charge carriers in the end zones. As a result of the high recombination rate in the end zones substantially no non-radiating recombination occurs at the mirror faces, so that mirror erosion is avoided.

摘要翻译： 一种具有用作谐振器的镜面的半导体激光器，其中有源激光器区域包括邻近镜面的端部区域，其具有注入的离子，优选质子，具有相关的晶体损伤。 端部区域的长度至少等于端部区域中的重组载流子的扩散长度。 由于端部区域中的高复合率基本上在镜面上不发生非辐射复合，所以避免镜面侵蚀。

公开(公告)号：US4447905A

公开(公告)日：1984-05-08

申请号：US247523

申请日：1981-03-25

申请人： Richard W. Dixon ,  Louis A. Koszi ,  Richard C. Miller ,  Bertram Schwartz

发明人： Richard W. Dixon ,  Louis A. Koszi ,  Richard C. Miller ,  Bertram Schwartz

IPC分类号： H01L33/00 ,  H01L33/24 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S3/19

CPC分类号： H01L33/24 ,  H01L33/0025 ,  H01S5/20 ,  H01S5/2202 ,  H01S5/2059 ,  Y10S148/084 ,  Y10S148/128

摘要： Semiconductor light emitting devices, lasers and LEDs, are described in which the current flow channel is narrower near the top surface of the device and wider at its bottom near the active region. Also, described are several attenuation masks for fabricating the channels of these devices by particle bombardment.

摘要翻译： 描述了半导体发光器件，激光器和LED，其中电流流动通道在器件的顶表面附近更窄，并且在其底部靠近有源区域较宽。 此外，还描述了通过粒子轰击来制造这些器件的通道的几个衰减掩模。

公开(公告)号：US4408331A

公开(公告)日：1983-10-04

申请号：US247627

申请日：1981-03-25

申请人： Robert L. Hartman ,  Louis A. Koszi ,  Bertram Schwartz

发明人： Robert L. Hartman ,  Louis A. Koszi ,  Bertram Schwartz

IPC分类号： H01S5/22 ,  H01S3/19

CPC分类号： H01S5/2202

摘要： Semiconductor lasers and LEDs are described in which the pumping current is constrained to flow from a relatively narrow upper channel formed by a V-groove, which extends to a depth short of the active region, through a relatively wider lower channel bounded by high resistivity regions, which extend from at least that depth into or through the active region. Also described are devices in which the V-groove is refilled with semiconductor material.

摘要翻译： 描述了半导体激光器和LED，其中泵浦电流被限制为通过由延伸到有源区域的深度的V沟槽形成的相对较窄的上部沟道流过由高电阻率区域限定的相对较宽的下部通道 ，其从至少该深度延伸到或穿过活动区域。 还描述了使用半导体材料重新填充V形槽的装置。

公开(公告)号：US4371968A

公开(公告)日：1983-02-01

申请号：US279394

申请日：1981-07-01

申请人： C. Ward Trussell, Jr. ,  James E. Miller

发明人： C. Ward Trussell, Jr. ,  James E. Miller

IPC分类号： H01L21/208 ,  H01L21/306 ,  H01L21/76 ,  H01L33/00 ,  H01S5/22 ,  H01S5/40 ,  H01S3/19

CPC分类号： H01S5/4031 ,  H01L21/30617 ,  H01L21/7605 ,  H01L33/0062 ,  H01S5/2202

摘要： A monolithic laser optical cavity structure and method of forming by use of planar photolithographic and crystal regrowth techniques. An original growth multilayer double heterostructure laser structure is grown by LPE on a N+-GaAs substrate. V-grooves are then etched in the epitaxial layers down through the optical cavity by photolithographic techniques. GaAlAs is grown in the V-grooves by crystal regrowth techniques up to the original surface of the laser wafer thus isolating the lasers from each other. The lasers are then separated to form laser arrays.

摘要翻译： 采用平面光刻和晶体再生技术形成的单片激光光学腔结构和形成方法。 通过LPE在N + -GaAs衬底上生长原始生长多层双异质结构激光器结构。 然后通过光刻技术将外延层中的V形槽向下蚀刻通过光学腔。 GaAlAs通过晶体再生技术在V形槽中生长直到激光晶片的原始表面，从而将激光彼此隔离。 然后将激光器分离以形成激光阵列。