Abstract:
A close-packed magnetic bubble propagation device includes a pattern having a plurality of propagation elements positioned in at least four adjacent rows. These elements are spaced to provide a period or spacing of bubbles in these rows of less than three bubble diameters. Upon application of a rotating in-plane field to the elements, bubbles in adjacent rows move in opposite directions. A preferred embodiment of this propagation device has at least two storage loops which contain at least four adjacent horizontal rows of propagation elements. A preferred device utilizing this pattern has at least two storage loops and an access path which passes through each of the loops. An electrical conductor is associated with the propagation elements in the access path so that the passing of a current through the conductor together with the application of an in-plane rotating field to the elements causes bubbles associated with the elements in the access path to move along the access path. Preferably, the pattern is surrounded by an array of confinement elements which confine the bubbles to the storage loops and the access path.
Abstract:
A single level masking process for producing microelectronic structures, such as magnetic bubble domain devices, which require very fine line widths. This is a subtractive dry process using a very thin, additively plated mask in order to obtain optimum lithographic resolution. Use of the very thin plated mask eliminates the need for a thick resist layer which would adversely affect resolution. In one example, a double layer metallurgy comprising a conductor layer (such as Au) and an overlying magnetically soft layer (such as NiFe) is patterned using a thin Ti (or Cr) mask. The Ti mask is subtractively patterned using a NiFe mask which is itself patterned by electroplating through a thin resist layer. The double layer NiFe/Au structure is patterned to provide devices having high aspect ratio, good pattern acuity, and uniform thicknesses, where the minimum feature is 1 micron or less.
Abstract:
A magnetic bubble Y-bar corner for use at the end of a minor loop. The Y-bar corner includes a Y-bar corner element and a canted I-bar positioned between the Y-bar corner element and each of the two adjacent storage elements in the minor loop. The ends of the arm of the Y-bar corner element are positioned adjacent the apex portions of the canted I-bars. The distance between the ends of the arms of the Y-bar is larger than the distance between the opposing ends of the two canted I-bars. With this corner a bubble propagates in either direction along a path from a minor loop storage element to the end of the canted I-bar and then to the apex portion of the canted I-bar and from there across to the end of the arm of the Y-bar.
Abstract:
A magnetic bubble memory device which comprises special minor loops for storing address information regarding spare minor loops corresponding to defective regular minor loops. The structure of the bubble transfer or reproducing gates corresponding to said special minor loops is different from that corresponding to ordinary minor loops.
Abstract:
Replicate/swap gating circuitry comprising separate gates oriented to be responsive to different phases of an in-plane magnetic field for transferring data to and from an adjacent storage loop in a bubble memory, said gate being formed of magnetic domain propagate elements arranged in propagation paths to perform several independently operable gating functions by a single current conductor on application of current pulses at selected phases of the rotating in-plane magnetic field.
Abstract:
A method of and an apparatus for magneto-resistively detecting information in a cross-tie memory system is disclosed. The detector includes a first conductive element, which is the terminating portion of an electrically-conducting wide-narrow edged propagating drive line, and second and third conductive elements that are serially aligned along a magnetic, serrated-edged data track, which three conductive elements form two gaps therebetween. The two gaps are oriented along the data track at respective narrow portions, a first narrow portion which may support a cross-tie but which second narrow portion will not support a cross-tie. A differential sense amplifier is coupled across the two gaps using the second narrow portion as a reference segment to differentially detect the presence vel non of a cross-tie in the first narrow portion.
Abstract:
The familiar G-shaped, non-closed, major path in a major-minor, magnetic bubble memory is formed controllably into a closed circumferential major loop about the minor loops during operation. A simple data format allows a simple start-up algorithm to ensure that data are secured.
Abstract:
A magnetic bubble domain storage system comprising an array of rows and columns of logical chips are organized into logical half-chips with even numbered bits in one half-chip and odd numbered bits in the other half-chip. Alternating rows of half-chips are used for storing even numbered bits and odd numbered bits, respectively. Each half-chip has its own bubble domain generator, but a common generator current line serves all generators for a row of even half-chips and all generators for a row of odd half-chips. Thus, information is written into even half-chips and odd half-chips at the same time by pulsing the generator current line common to a row of even half-chips and a row of odd half-chips. Each half-chip has a sensing element and all the sensing elements corresponding to a row of half-chips are connected in series. The series connection of sensors in any row forms one leg of a bridge circuit, and another leg of the bridge circuit is another series connection of sensors in another row of the storage array. One of these legs corresponds to sensors from a row of even half-chips while the other leg corresponds to sensors from a row of odd half-chips. The other two legs of the bridge circuit are comprised of dummy resistors. Even though two rows of sensors are connected to the same bridge circuit, even numbered bits and odd numbered bits will be read at alternating times.
Abstract:
The magnetic bias field required to collapse magnetic domains in an epitaxial liquid phase grown garnet is reduced by a method of depositing a layer of a suitable element, e.g. gallium or chromium, on the surface of the garnet after growth and then heating the garnet. The suitability of the element depends on its atomic diameter and affinity for oxygen.Propagation paths for bubbles in a magnetic bubble memory are defined by treating a garnet except where the propagation paths are required, by the method.
Abstract:
There is shown and described a magnetic bubble domain decoder organization which is especially adaptable to a single port configuration. A plurality of separate storage loops are utilized to store data in the form of magnetic bubble domains. An input/output section is provided for supplying data to the storage loops. A crossover junction circuit permits information to be propagated along a single input/output loop into and out of the storage loops. Input and output decoder circuits are provided in each storage loop to control the data which is stored therein. Control circuits such as tranfer switches, universal switches, retarding networks and the like are arranged to control the movement of magnetic bubble domains in the storage loops. By operation of the various control circuits, interwoven data in the storage loops can be selectively separated and retrieved at the input/output section.