Close-packed bubble propagation device
    111.
    发明授权
    Close-packed bubble propagation device 失效
    密闭气泡传播装置

    公开(公告)号:US4276613A

    公开(公告)日:1981-06-30

    申请号:US954132

    申请日:1978-10-23

    Applicant: Byron R. Brown

    Inventor: Byron R. Brown

    CPC classification number: G11C19/0816

    Abstract: A close-packed magnetic bubble propagation device includes a pattern having a plurality of propagation elements positioned in at least four adjacent rows. These elements are spaced to provide a period or spacing of bubbles in these rows of less than three bubble diameters. Upon application of a rotating in-plane field to the elements, bubbles in adjacent rows move in opposite directions. A preferred embodiment of this propagation device has at least two storage loops which contain at least four adjacent horizontal rows of propagation elements. A preferred device utilizing this pattern has at least two storage loops and an access path which passes through each of the loops. An electrical conductor is associated with the propagation elements in the access path so that the passing of a current through the conductor together with the application of an in-plane rotating field to the elements causes bubbles associated with the elements in the access path to move along the access path. Preferably, the pattern is surrounded by an array of confinement elements which confine the bubbles to the storage loops and the access path.

    Abstract translation: 紧密堆积的气泡传播装置包括具有位于至少四个相邻行中的多个传播元件的图案。 这些元件间隔开以提供这些行中小于三个气泡直径的气泡的周期或间隔。 当向元件施加旋转的平面内场时,相邻行中的气泡沿相反方向移动。 该传播装置的优选实施例具有至少两个包含至少四个相邻水平行传播元件的存储环。 利用该图案的优选设备具有至少两个存储环路和通过每个环路的访问路径。 电导体与访问路径中的传播元件相关联,使得电流通过导体一起以及对元件的平面内旋转场的应用导致与访问路径中的元件相关联的气泡沿着 访问路径。 优选地,该图案由将泡沫限制在存储环路和存取路径上的限制元件阵列包围。

    Bubble device fabrication
    112.
    发明授权
    Bubble device fabrication 失效
    气泡装置制造

    公开(公告)号:US4272348A

    公开(公告)日:1981-06-09

    申请号:US962251

    申请日:1978-11-20

    CPC classification number: H01F41/34 G11C19/0808 H01F10/06 Y10T29/49069

    Abstract: A single level masking process for producing microelectronic structures, such as magnetic bubble domain devices, which require very fine line widths. This is a subtractive dry process using a very thin, additively plated mask in order to obtain optimum lithographic resolution. Use of the very thin plated mask eliminates the need for a thick resist layer which would adversely affect resolution. In one example, a double layer metallurgy comprising a conductor layer (such as Au) and an overlying magnetically soft layer (such as NiFe) is patterned using a thin Ti (or Cr) mask. The Ti mask is subtractively patterned using a NiFe mask which is itself patterned by electroplating through a thin resist layer. The double layer NiFe/Au structure is patterned to provide devices having high aspect ratio, good pattern acuity, and uniform thicknesses, where the minimum feature is 1 micron or less.

    Abstract translation: 用于产生需要非常细线宽的微电子结构的单层掩模工艺,例如磁性气泡域装置。 这是使用非常薄的附加电镀掩模的减法干法,以获得最佳的光刻分辨率。 使用非常薄的电镀掩模消除了对分辨率的不利影响的厚抗蚀剂层的需要。 在一个实例中,使用薄的Ti(或Cr)掩模来图案化包括导体层(例如Au)和上覆的软磁性层(例如NiFe)的双层冶金。 使用NiFe掩模对Ti掩模进行减法图案化,NiFe掩模本身通过电镀通过薄的抗蚀剂层进行图案化。 将双层NiFe / Au结构图案化以提供具有高纵横比,良好图案敏锐度和均匀厚度的器件,其中最小特征为1微米或更小。

    Magnetic bubble Y-bar corner
    113.
    发明授权
    Magnetic bubble Y-bar corner 失效
    磁泡Y形棒角

    公开(公告)号:US4261045A

    公开(公告)日:1981-04-07

    申请号:US53469

    申请日:1979-06-29

    CPC classification number: G11C19/0816 G11C19/0883

    Abstract: A magnetic bubble Y-bar corner for use at the end of a minor loop. The Y-bar corner includes a Y-bar corner element and a canted I-bar positioned between the Y-bar corner element and each of the two adjacent storage elements in the minor loop. The ends of the arm of the Y-bar corner element are positioned adjacent the apex portions of the canted I-bars. The distance between the ends of the arms of the Y-bar is larger than the distance between the opposing ends of the two canted I-bars. With this corner a bubble propagates in either direction along a path from a minor loop storage element to the end of the canted I-bar and then to the apex portion of the canted I-bar and from there across to the end of the arm of the Y-bar.

    Abstract translation: 一个磁性气泡Y形棒角,用于一个小环的末端。 Y形杆角包括一个Y形杆角元件和一个位于Y形杆角元件与次级环中两个相邻存储元件中的每一个之间的倾斜I形杆。 Y形杆角元件的臂的端部邻近倾斜I形棒的顶点定位。 Y杆的臂的端部之间的距离大于两个倾斜I型棒的相对端之间的距离。 在该拐角处,气泡沿着从小环存储元件到斜面I条的端部的任一方向在任一方向上传播,然后传播到斜面I条的顶点部分,并且从那里到达臂的末端 Y-bar。

    Magnetic bubble memory device
    114.
    发明授权
    Magnetic bubble memory device 失效
    磁性气泡记忆装置

    公开(公告)号:US4259727A

    公开(公告)日:1981-03-31

    申请号:US52317

    申请日:1979-06-26

    CPC classification number: G11C19/0883

    Abstract: A magnetic bubble memory device which comprises special minor loops for storing address information regarding spare minor loops corresponding to defective regular minor loops. The structure of the bubble transfer or reproducing gates corresponding to said special minor loops is different from that corresponding to ordinary minor loops.

    Abstract translation: 一种磁性气泡存储装置,包括用于存储关于与缺陷的正常小环对应的备用次级环路的地址信息的特殊次级环路。 对应于所述特殊次级环的气泡转移或再现门的结构与对应于普通次级回路的结构不同。

    Phase controlled replicate/swap gate for bubble memories
    115.
    发明授权
    Phase controlled replicate/swap gate for bubble memories 失效
    用于气泡存储器的相控复制/互换门

    公开(公告)号:US4246648A

    公开(公告)日:1981-01-20

    申请号:US18512

    申请日:1979-03-08

    CPC classification number: G11C19/0883 G11C19/0858

    Abstract: Replicate/swap gating circuitry comprising separate gates oriented to be responsive to different phases of an in-plane magnetic field for transferring data to and from an adjacent storage loop in a bubble memory, said gate being formed of magnetic domain propagate elements arranged in propagation paths to perform several independently operable gating functions by a single current conductor on application of current pulses at selected phases of the rotating in-plane magnetic field.

    Abstract translation: 复制/交换门控电路,包括单独的门,其定向为响应于面内磁场的不同相位,用于向气泡存储器中的相邻存储环路传送数据和从相邻存储环路传送数据,所述栅极由布置在传播路径中的磁畴传播元件 以在旋转的面内磁场的选定阶段施加电流脉冲时,通过单个电流导体执行若干可独立操作的门控功能。

    Differential magneto-resistive detector for cross-tie wall memory system
    116.
    发明授权
    Differential magneto-resistive detector for cross-tie wall memory system 失效
    用于交叉连接墙存储系统的差分磁阻检测器

    公开(公告)号:US4246647A

    公开(公告)日:1981-01-20

    申请号:US20761

    申请日:1979-02-23

    CPC classification number: G11C19/0866

    Abstract: A method of and an apparatus for magneto-resistively detecting information in a cross-tie memory system is disclosed. The detector includes a first conductive element, which is the terminating portion of an electrically-conducting wide-narrow edged propagating drive line, and second and third conductive elements that are serially aligned along a magnetic, serrated-edged data track, which three conductive elements form two gaps therebetween. The two gaps are oriented along the data track at respective narrow portions, a first narrow portion which may support a cross-tie but which second narrow portion will not support a cross-tie. A differential sense amplifier is coupled across the two gaps using the second narrow portion as a reference segment to differentially detect the presence vel non of a cross-tie in the first narrow portion.

    Abstract translation: 公开了一种用于在交叉联系存储器系统中磁阻检测信息的方法和装置。 检测器包括第一导电元件,其是导电宽窄边缘传播驱动线的端接部分,以及沿着磁性锯齿状边缘数据轨道串联对准的第二和第三导电元件,其中三个导电元件 在它们之间形成两个间隙。 两个间隙沿着相应窄部分处的数据轨道定向,第一窄部分可以支撑交叉连接,但是第二窄部分将不支撑交叉连接。 差分读出放大器使用第二窄部分作为参考部分跨越两个间隙耦合,以差分地检测第一狭窄部分中的交叉连接的存在vel。

    Fail safe magnetic bubble memory
    117.
    发明授权
    Fail safe magnetic bubble memory 失效
    故障安全磁性气泡记忆

    公开(公告)号:US4238836A

    公开(公告)日:1980-12-09

    申请号:US18310

    申请日:1979-03-07

    CPC classification number: G11C19/0875 G06F11/14

    Abstract: The familiar G-shaped, non-closed, major path in a major-minor, magnetic bubble memory is formed controllably into a closed circumferential major loop about the minor loops during operation. A simple data format allows a simple start-up algorithm to ensure that data are secured.

    Abstract translation: 主要小型磁性气泡存储器中熟悉的G形,非闭合主要路径可操作地形成在操作期间围绕次级环路的封闭的周向主环路。 简单的数据格式允许简单的启动算法来确保数据的安全。

    Improved bubble domain storage array
    118.
    发明授权
    Improved bubble domain storage array 失效
    改进的气泡域存储阵列

    公开(公告)号:US4221000A

    公开(公告)日:1980-09-02

    申请号:US902657

    申请日:1978-05-04

    CPC classification number: G11C19/0875 G11C19/0866 G11C19/287 Y10S707/99937

    Abstract: A magnetic bubble domain storage system comprising an array of rows and columns of logical chips are organized into logical half-chips with even numbered bits in one half-chip and odd numbered bits in the other half-chip. Alternating rows of half-chips are used for storing even numbered bits and odd numbered bits, respectively. Each half-chip has its own bubble domain generator, but a common generator current line serves all generators for a row of even half-chips and all generators for a row of odd half-chips. Thus, information is written into even half-chips and odd half-chips at the same time by pulsing the generator current line common to a row of even half-chips and a row of odd half-chips. Each half-chip has a sensing element and all the sensing elements corresponding to a row of half-chips are connected in series. The series connection of sensors in any row forms one leg of a bridge circuit, and another leg of the bridge circuit is another series connection of sensors in another row of the storage array. One of these legs corresponds to sensors from a row of even half-chips while the other leg corresponds to sensors from a row of odd half-chips. The other two legs of the bridge circuit are comprised of dummy resistors. Even though two rows of sensors are connected to the same bridge circuit, even numbered bits and odd numbered bits will be read at alternating times.

    Abstract translation: 包括逻辑芯片的行和列的阵列的磁性气泡域存储系统被组织成在另一个半芯片中的一个半芯片和奇数位中具有偶数位的逻辑半芯片。 半芯片的交替行分别用于存储偶数位和奇数位。 每个半芯片都有自己的气泡域发生器,但是通常的发电机电流线为所有发生器提供了一行甚至半芯片,并且所有发生器都用于一排奇数半芯片。 因此,通过脉冲发生器电流线将偶数半芯片和奇数半芯片同时写入偶数半芯片行和奇数半芯片行,将信息写入偶数半芯片和奇数半芯片。 每个半芯片具有感测元件,并且对应于一行半芯片的所有感测元件串联连接。 任何行中的传感器的串联连接形成桥接电路的一条支路,桥接电路的另一条支路是存储阵列的另一行中的传感器的另一串联连接。 这些腿中的一个对应于来自一排偶数半芯片的传感器,而另一条腿对应于来自一排奇数半芯片的传感器。 桥接电路的另外两条支路由虚拟电阻组成。 即使两行传感器连接到相同的桥接电路,偶数位和奇数位将在交替时间读取。

    Treatment of magnetic garnet film
    119.
    发明授权
    Treatment of magnetic garnet film 失效
    磁石榴石膜的处理

    公开(公告)号:US4219610A

    公开(公告)日:1980-08-26

    申请号:US911057

    申请日:1978-05-23

    Abstract: The magnetic bias field required to collapse magnetic domains in an epitaxial liquid phase grown garnet is reduced by a method of depositing a layer of a suitable element, e.g. gallium or chromium, on the surface of the garnet after growth and then heating the garnet. The suitability of the element depends on its atomic diameter and affinity for oxygen.Propagation paths for bubbles in a magnetic bubble memory are defined by treating a garnet except where the propagation paths are required, by the method.

    Abstract translation: 通过沉积合适元素的层的方法,例如,通过沉积一层合适的元素的方法来减少在外延液相生长的石榴石中破坏磁畴所需的磁偏置场。 镓或铬,生长后石榴石表面,然后加热石榴石。 元素的适用性取决于其原子直径和对氧气的亲和力。 通过处理石榴石来限定气泡存储器中的气泡的传播路径,除了需要传播路径之外,通过该方法。

    Magnetic bubble domain decoder organization
    120.
    发明授权
    Magnetic bubble domain decoder organization 失效
    磁泡域解码器组织

    公开(公告)号:US4218761A

    公开(公告)日:1980-08-19

    申请号:US958924

    申请日:1978-11-08

    Applicant: Thomas T. Chen

    Inventor: Thomas T. Chen

    CPC classification number: H03M7/004 G11C19/0883

    Abstract: There is shown and described a magnetic bubble domain decoder organization which is especially adaptable to a single port configuration. A plurality of separate storage loops are utilized to store data in the form of magnetic bubble domains. An input/output section is provided for supplying data to the storage loops. A crossover junction circuit permits information to be propagated along a single input/output loop into and out of the storage loops. Input and output decoder circuits are provided in each storage loop to control the data which is stored therein. Control circuits such as tranfer switches, universal switches, retarding networks and the like are arranged to control the movement of magnetic bubble domains in the storage loops. By operation of the various control circuits, interwoven data in the storage loops can be selectively separated and retrieved at the input/output section.

    Abstract translation: 显示和描述了一种特别适用于单一端口配置的磁性气泡域解码器组织。 利用多个单独的存储循环来以磁性气泡域的形式存储数据。 提供输入/输出部分用于向存储环路提供数据。 交叉连接电路允许信息沿着单个输入/输出环路传播到存储环路中和从存储环路中传播。 在每个存储循环中提供输入和输出解码器电路以控制其中存储的数据。 布置了诸如转换开关,通用开关,延迟网络等的控制电路以控制存储环路中的磁性气泡区域的移动。 通过各种控制电路的操作,可以在输入/输出部分选择性地分离和检索存储回路中的交织数据。

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