公开(公告)号：US07854174B2

公开(公告)日：2010-12-21

申请号：US12393294

申请日：2009-02-26

Applicant: Julia W. Aebersold ,  Kevin Walsh ,  Mark Crain ,  Michael Voor

Inventor： Julia W. Aebersold ,  Kevin Walsh ,  Mark Crain ,  Michael Voor

IPC: G01L1/14

CPC classification number: G01L1/148

Abstract: A three-dimensional micro-electro-mechanical-systems (MEMS) capacitive bending and axial strain sensor capacitor is described. Two independent comb structures, incorporating suspended polysilicon interdigitated fingers, are fabricated simultaneously on a substrate that can displace independently of each other while attached to a substrate undergoing bending or axial deformation. A change in spacing between the interdigitated fingers will output a change in capacitance of the sensor and is the primary mode of operation of the device. On the bottom and to the end of each comb structure, a glass pad is attached to the comb structure to allow for ample surface area for affixing the sensor to a substrate. During fabrication, tethers are used to connect each comb structure to maintain equal spacing between the fingers before attachment to the substrate. After attachment, the tethers are broken to allow independent movement of each comb structure.

Abstract translation: 描述了三维微电子机械系统（MEMS）电容弯曲和轴向应变传感器电容器。 两个独立的梳形结构，并入悬浮的多晶硅叉指，同时被制造在基板上，该基板可以在连接到经历弯曲或轴向变形的基板上时彼此独立地移位。 交叉指状物之间的间距变化将输出传感器的电容变化，并且是器件的主要操作模式。 在每个梳结构的底部和末端，玻璃垫连接到梳状结构以允许足够的表面积将传感器固定到基底上。 在制造过程中，系绳用于连接每个梳状结构，以在连接到基底之前在指状物之间保持相等的间隔。 连接后，系绳被破坏以允许每个梳结构的独立移动。

公开(公告)号：US07836776B2

公开(公告)日：2010-11-23

申请号：US12552447

申请日：2009-09-02

Applicant: Suryakala Majeti

Inventor： Suryakala Majeti

IPC: G01L1/14

CPC classification number: G01B7/22 ,  G01L1/148 ,  Y10T29/49103 ,  Y10T29/49147

Abstract: A micro-electromechanical capacitive strain sensor. The micro-electromechanical capacitive strain sensor comprises a first bent beam, a second bent beam, and a straight center beam. The first bent beam, second bent beam, and straight center beam are aligned in the X-axis with the straight center beam located between the first and second bent beams. The first bent beam, second bent beam, and straight center beam are disposed between two anchors. The two anchors are aligned in the Y-axis. The first bent beam is bent away from the center beam and the second bent beam is bent towards the center beam to provide a set of differential capacitors with respect to the center beam, wherein the center beam serves as a common reference with respect to the first and second bent beams.

Abstract translation: 微机电容应变传感器。 微机电容应变传感器包括第一弯曲梁，第二弯曲梁和直线中心梁。 第一弯曲梁，第二弯曲梁和直线中心梁在X轴上对齐，直线中心梁位于第一和第二弯曲梁之间。 第一弯梁，第二弯梁和直中心梁设置在两个锚之间。 两个锚点在Y轴上对齐。 第一弯曲光束从中心光束弯曲并且第二弯曲光束朝向中心光束弯曲，以相对于中心光束提供一组差分电容器，其中中心光束用作相对于第一光束的共同参考 和第二弯梁。

公开(公告)号：US07603910B2

公开(公告)日：2009-10-20

申请号：US12112810

申请日：2008-04-30

Applicant: Suryakala Majeti

Inventor： Suryakala Majeti

IPC: G01L1/14

CPC classification number: G01B7/22 ,  G01L1/148 ,  Y10T29/49103 ,  Y10T29/49147

Abstract: A micro-electromechanical capacitive strain sensor. The micro-electromechanical capacitive strain sensor comprises a first bent beam, a second bent beam, and a straight center beam. The first bent beam, second bent beam, and straight center beam are aligned in the X-axis with the straight center beam located between the first and second bent beams. The first bent beam, second bent beam, and straight center beam are disposed between two anchors. The two anchors are aligned in the Y-axis. The first bent beam is bent away from the center beam and the second bent beam is bent towards the center beam to provide a set of differential capacitors with respect to the center beam, wherein the center beam serves as a common reference with respect to the first and second bent beams.

Abstract translation: 微机电容应变传感器。 微机电容应变传感器包括第一弯曲梁，第二弯曲梁和直线中心梁。 第一弯曲梁，第二弯曲梁和直线中心梁在X轴上对齐，直线中心梁位于第一和第二弯曲梁之间。 第一弯梁，第二弯梁和直中心梁设置在两个锚之间。 两个锚点在Y轴上对齐。 第一弯曲光束从中心光束弯曲并且第二弯曲光束朝向中心光束弯曲，以相对于中心光束提供一组差分电容器，其中中心光束用作相对于第一光束的共同参考 和第二弯梁。

公开(公告)号：US07578162B2

公开(公告)日：2009-08-25

申请号：US11788849

申请日：2007-04-20

Applicant: Kazuhiro Okada

Inventor： Kazuhiro Okada

IPC: G01P13/30

CPC classification number: G01P1/023 ,  G01L1/148 ,  G01L1/18 ,  G01L5/162 ,  G01L25/00 ,  G01P15/123 ,  G01P15/125 ,  G01P15/18 ,  G01P21/00 ,  G01P2015/084

Abstract: A sensor comprises a semiconductor pellet (10) including a working portion (11) adapted to undergo action of a force, a fixed portion (13) fixed on the sensor body, and a flexible portion (13) having flexibility formed therebetween, a working body (20) for transmitting an exerted force to the working portion, and detector means (60-63) for transforming a mechanical deformation produced in the semiconductor pellet to an electric signal to thereby detect a force exerted on the working body as an electric signal. A signal processing circuit is applied to the sensor. This circuit uses analog multipliers (101-109) and analog adders/subtracters (111-113), and has a function to cancel interference produced in different directions. Within the sensor, two portions (E3, E4-E8) located at positions opposite to each other and producing a displacement therebetween by action of a force are determined. By exerting a coulomb force between both the portions, the test of the sensor is carried out.

Abstract translation: 传感器包括半导体颗粒（10），其包括适于承受力的作用部分（11），固定在传感器主体上的固定部分（13）和在其之间形成柔性的柔性部分（13），工作 用于将施加的力传递到工作部的主体（20）和用于将半导体芯片中产生的机械变形变换为电信号的检测器装置（60-63），从而检测作用于工作体上的力作为电信号 。 信号处理电路被应用于传感器。 该电路使用模拟乘法器（101-109）和模拟加法器/减法器（111-113），并具有消除在不同方向产生的干扰的功能。 在传感器内，确定位于彼此相对的位置并通过力的作用产生位移之间的两个部分（E3，E4-E8）。 通过在两个部分之间施加库仑力，进行传感器的测试。

公开(公告)号：US07563692B2

公开(公告)日：2009-07-21

申请号：US11677629

申请日：2007-02-22

Applicant: Jeffrey Bernard Fortin ,  Guanghua (George) Wu ,  Kanakasabapathi Subramanian

Inventor： Jeffrey Bernard Fortin ,  Guanghua (George) Wu ,  Kanakasabapathi Subramanian

IPC: H01L21/30

CPC classification number: G01L9/0073 ,  G01L1/148

Abstract: According to some embodiments, a conducting layer is formed on a first wafer. An insulating layer is formed on a second wafer. The insulating layer includes a cavity and a conducting area may be formed in the second wafer proximate to the cavity. The side of the conducting layer opposite the first wafer is bonded to the side of the insulating layer opposite the second wafer. At least some of the first wafer is then removed, without removing at least some of the conducting layer, to form a conducting diaphragm that is substantially parallel to the second wafer. In this way, an amount of capacitance between the diaphragm and the conducting area may be measured to determine an amount of pressure being applied to the diaphragm.

公开(公告)号：US07560788B2

公开(公告)日：2009-07-14

申请号：US10945399

申请日：2004-09-20

Applicant: Jeffrey Fortin ,  Guanghua (George) Wu ,  Kanakasabapathi Subramanian

Inventor： Jeffrey Fortin ,  Guanghua (George) Wu ,  Kanakasabapathi Subramanian

IPC: H01L29/78

CPC classification number: G01L9/0073 ,  G01L1/148

Abstract: According to some embodiments, a conducting layer is formed on a first wafer. An insulating layer is formed on a second wafer. The insulating layer includes a cavity and a conducting area may be formed in the second wafer proximate to the cavity. The side of the conducting layer opposite the first wafer is bonded to the side of the insulating layer opposite the second wafer. At least some of the first wafer is then removed, without removing at least some of the conducting layer, to form a conducting diaphragm that is substantially parallel to the second wafer. In this way, an amount of capacitance between the diaphragm and the conducting area may be measured to determine an amount of pressure being applied to the diaphragm.

Abstract translation: 根据一些实施例，在第一晶片上形成导电层。 在第二晶片上形成绝缘层。 绝缘层包括空腔，并且导电区域可以形成在靠近空腔的第二晶片中。 与第一晶片相对的导电层的一侧被结合到与第二晶片相对的绝缘层的一侧。 然后去除至少一些第一晶片，而不去除至少一些导电层，以形成基本上平行于第二晶片的导电隔膜。 以这种方式，可以测量隔膜和导电区域之间的电容量，以确定施加到隔膜的压力的量。

公开(公告)号：US07509870B2

公开(公告)日：2009-03-31

申请号：US11552547

申请日：2006-10-25

Applicant: Julia W. Aebersold ,  Kevin Walsh ,  Mark Crain ,  Michael Voor

Inventor： Julia W. Aebersold ,  Kevin Walsh ,  Mark Crain ,  Michael Voor

IPC: G01L1/14

CPC classification number: G01L1/148

Abstract: A three-dimensional micro-electro-mechanical-systems (MEMS) capacitive bending and axial strain sensor capacitor is described. Two independent comb structures, incorporating suspended polysilicon interdigitated fingers, are fabricated simultaneously on a substrate that can displace independently of each other while attached to a substrate undergoing bending or axial deformation. A change in spacing between the interdigitated fingers will output a change in capacitance of the sensor and is the primary mode of operation of the device. On the bottom and to the end of each comb structure, a glass pad is attached to the comb structure to allow for ample surface area for affixing the sensor to a substrate. During fabrication, tethers are used to connect each comb structure to maintain equal spacing between the fingers before attachment to the substrate. After attachment, the tethers are broken to allow independent movement of each comb structure.

Abstract translation: 描述了三维微电子机械系统（MEMS）电容弯曲和轴向应变传感器电容器。 两个独立的梳形结构，并入悬浮的多晶硅叉指，同时被制造在基板上，该基板可以在连接到经历弯曲或轴向变形的基板上时彼此独立地移位。 交叉指状物之间的间距变化将输出传感器的电容变化，并且是器件的主要操作模式。 在每个梳结构的底部和末端，玻璃垫连接到梳状结构以允许足够的表面积将传感器固定到基底上。 在制造过程中，系绳用于连接每个梳状结构，以在连接到基底之前在指状物之间保持相等的间隔。 连接后，系绳被破坏以允许每个梳结构的独立移动。

公开(公告)号：US07497134B2

公开(公告)日：2009-03-03

申请号：US11861207

申请日：2007-09-25

Applicant: Wayne G. Renken ,  Mei H. Sun ,  Aron Abramowski Mason

Inventor： Wayne G. Renken ,  Mei H. Sun ,  Aron Abramowski Mason

IPC: G01L1/16

CPC classification number: G01L1/148 ,  G01L5/0047 ,  G01L9/0042 ,  G01L9/0073

Abstract: At least one shear force sensor is used to measure the shear force on a member, when the member is in contact with and pressed against a polishing or planarization surface and a lateral force is applied between the two surfaces. Preferably the structure and the surface of the structure have properties (such as one or more of the following: dimensions and coefficient of friction) that are substantially the same as those of a real substrate, such as a semiconductor wafer or flat panel display panel.

Abstract translation: 当构件与抛光或平坦化表面接触并压靠在抛光或平坦化表面上并且在两个表面之间施加横向力时，使用至少一个剪切力传感器来测量构件上的剪切力。 优选地，结构和结构的表面具有与诸如半导体晶片或平板显示面板的实际基板基本上相同的性质（例如以下的一个或多个：尺寸和摩擦系数）。

公开(公告)号：US20080210013A1

公开(公告)日：2008-09-04

申请号：US12070849

申请日：2008-02-21

Applicant: Peter G. Meehan ,  William Hunt ,  Eamon Hynes ,  John O'Dowd ,  Oliver Kierse

Inventor： Peter G. Meehan ,  William Hunt ,  Eamon Hynes ,  John O'Dowd ,  Oliver Kierse

IPC: G01L1/14

CPC classification number: G01L9/0072 ,  G01L1/142 ,  G01L1/148 ,  G01L9/0073 ,  G01L9/0075 ,  H01L2224/48091 ,  H01L2224/73257 ,  H01L2924/00014

Abstract: A sealed capacitive sensor includes a substrate having a diaphragm forming a first plate of a capacitor; a second fixed plate of the capacitor spaced from the diaphragm and defining a predetermined dielectric gap and a sealing medium connecting together the substrate and fixed plate in an integrated structure and hermetically sealing the gap.

Abstract translation: 一种密封电容式传感器包括：具有形成电容器的第一板的隔膜的基板; 所述电容器的第二固定板与所述隔膜间隔开并限定预定的电介质间隙，以及将所述基板和固定板以一体结构连接在一起并密封所述间隙的密封介质。

公开(公告)号：US20080022777A1

公开(公告)日：2008-01-31

申请号：US10581782

申请日：2004-12-03

Applicant: Woei Wan Tan ,  Pei Ge ,  Eng Hock Francis Tay ,  Jyh Siong Phang

Inventor： Woei Wan Tan ,  Pei Ge ,  Eng Hock Francis Tay ,  Jyh Siong Phang

IPC: G01L9/12 ,  H01G5/16

CPC classification number: G01L9/0073 ,  G01F23/18 ,  G01L1/148

Abstract: A capacitive pressure sensing device comprising, a base member, a diaphragm member deflectable under an external pressure, a cantilever member disposed between the base member and the diaphragm member and supported on a support structure, wherein the base member and the cantilever member form a capacitor structure of the device and wherein deflection of the diaphragm member beyond a threshold value causes the cantilever member to deflect to cause a capacitive change in the capacitor structure.

Abstract translation: 一种电容式压力感测装置，包括：基座构件，在外部压力下可偏转的隔膜构件;悬臂构件，设置在所述基座构件和所述隔膜构件之间并支撑在支撑结构上，其中所述基座构件和所述悬臂构件形成电容器 该装置的结构，并且其中隔膜部件的偏转超过阈值导致悬臂部件偏转以引起电容器结构中的电容变化。