公开(公告)号：US4545037A

公开(公告)日：1985-10-01

申请号：US508504

申请日：1983-06-28

申请人： Tomio Nakano ,  Masao Nakano ,  Junji Ogawa

发明人： Tomio Nakano ,  Masao Nakano ,  Junji Ogawa

IPC分类号： G11C11/401 ,  G11C5/14 ,  G11C11/404 ,  G11C11/4074 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  G11C5/06

CPC分类号： G11C11/404 ,  G11C11/4074 ,  G11C5/14

摘要： A dynamic semiconductor memory device of an open bit-line type includes a plurality of first wiring lines running on common opposite electrodes for forming opposite electrodes of memory cell capacitors and connected to the common opposite electrodes at a number of contact points. A second wiring line is connected to the ends of the first wiring lines and to a voltage supply line at the center point of the second wiring line, so that the potential distribution of the common opposite electrodes can be equalized precisely.

摘要翻译： 开放位线型的动态半导体存储器件包括在共同的相对电极上运行的多个第一布线，用于形成存储单元电容器的相对电极并且在多个接触点处连接到公共的相对电极。 第二布线与第一布线的端部和第二布线的中心点处的电压供给线连接，能够使公共对置电极的电位分布精度均匀化。