公开(公告)号：US20150118790A1

公开(公告)日：2015-04-30

申请号：US14586056

申请日：2014-12-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takuya HIROHASHI ,  Masahiro TAKAHASHI ,  Takashi SHIMAZU

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L29/66742 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

Abstract translation: 可以使用较大的衬底，并且可以通过形成具有高结晶度的氧化物半导体层来制造具有期望的高场敏性迁移率的晶体管，由此大尺寸显示装置，高性能半导体器件， 等可以投入实际使用。 在衬底上形成第一多组分氧化物半导体层，并在其上形成单组分氧化物半导体层; 然后通过在500℃至1000℃（包括端值）进行热处理从表面向内部进行晶体生长，优选550℃至750℃，从而使第一多组分氧化物半导体层 包括单晶区域和形成包括单晶区域的单组分氧化物半导体层; 并且包括单晶区域的第二多分量氧化物半导体层堆叠在包括单晶区域的单组分氧化物半导体层上。

公开(公告)号：US20140138683A1

公开(公告)日：2014-05-22

申请号：US14165917

申请日：2014-01-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kunihiko SUZUKI ,  Masahiro TAKAHASHI

IPC: H01L29/786 ,  H01L23/00

CPC classification number: H01L21/02664 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L23/564 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H2O) is eliminated from an oxide semiconductor layer with use of a halogen element typified by fluorine or chlorine, so that the impurity concentration in the oxide semiconductor layer is reduced. A gate insulating layer and/or an insulating layer provided in contact with the oxide semiconductor layer can be formed to contain a halogen element. In addition, a halogen element may be attached to the oxide semiconductor layer through plasma treatment under an atmosphere of a gas containing a halogen element.

Abstract translation: 本发明的目的是提供一种其中使用氧化物半导体的稳定电特性的半导体器件。 使用以氟或氯为代表的卤素元素，从氧化物半导体层中除去氢或水分等杂质（例如氢原子或含有氢原子的化合物，例如H 2 O），使得杂质浓度 氧化物半导体层减少。 可以形成与氧化物半导体层接触设置的栅极绝缘层和/或绝缘层以含有卤素元素。 此外，卤素元素可以在含有卤素元素的气体的气氛下通过等离子体处理附着到氧化物半导体层。

公开(公告)号：US20130105792A1

公开(公告)日：2013-05-02

申请号：US13657196

申请日：2012-10-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Motoki NAKASHIMA ,  Takashi SHIMAZU

IPC: H01B1/08 ,  H01L29/786

CPC classification number: C23C14/08 ,  C23C14/3414 ,  G02F1/1368 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/7869

Abstract: A material suitable for a semiconductor included in a transistor, a diode, or the like is provided. The material is an oxide material including In, M1, M2 and Zn, in which M1 is an element in the group 13 of the periodic table, a typical example thereof is Ga, and M2 is an element whose content is less than the content of M1. Examples of M2 are Ti, Zr, Hf, Ge, Sn, and the like. To contain M2 leads to suppression of generation of oxygen vacancies in the oxide material. A transistor which includes as few oxygen vacancies as possible can be achieved, whereby reliability of a semiconductor device can be increased.

Abstract translation: 提供了适用于包括在晶体管，二极管等中的半导体的材料。 该材料是包括In，M1，M2和Zn的氧化物材料，其中M1是元素周期表第13族元素，其典型实例是Ga，M2是含量小于 M1。 M2的实例是Ti，Zr，Hf，Ge，Sn等。 含有M2导致抑制氧化物材料中氧空位的产生。 可以实现尽可能少的氧空位的晶体管，从而可以提高半导体器件的可靠性。