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公开(公告)号：US20220165781A1
公开(公告)日：2022-05-26
申请号：US17539552
申请日：2021-12-01
发明人： HIDEAKI MOGI , YOHEI HIROSE , SHINTAROU HIRATA , YUYA KUMAGAI , TETSUJI YAMAGUCHI , MASAKI MURATA , YASUHARU UJIIE
IPC分类号： H01L27/146 , H04N5/369
摘要： The present disclosure relates to a solid-state image sensor and an electronic apparatus that suppress a decrease in light collection efficiency and degradation in oblique light resistance and enable a reduction in the height of a solid-state image sensor. A solid-state image sensor according to a first aspect of the present disclosure is a solid-state image sensor of a vertical spectral diffraction type in which a plurality of photoelectric conversion units are stacked in a region of each pixel, the solid-state image sensor including: a first photoelectric conversion module that includes a first photoelectric conversion unit configured to perform photoelectric conversion on light in a first wavelength range of incident light, a first upper electrode and a first lower electrode formed with the first photoelectric conversion unit placed between the first upper electrode and the first lower electrode, and a first spectral correction unit formed between the first upper electrode and the first lower electrode to be stacked on the first photoelectric conversion unit; and a second photoelectric conversion unit configured to perform photoelectric conversion on light in a second wavelength range of light that has passed through the first photoelectric conversion module, the second wavelength range being different from the first wavelength range. The present disclosure can be applied to, for example, a CMOS image sensor.
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公开(公告)号：US11343451B2
公开(公告)日：2022-05-24
申请号：US16849843
申请日：2020-04-15
申请人： Hiroaki Ishiwata , Hideo Kido , Norihiro Kubo , Tetsuya Uchida
发明人： Hiroaki Ishiwata , Hideo Kido , Norihiro Kubo , Tetsuya Uchida
IPC分类号： H04N5/369 , H04N5/3745 , H01L27/146 , H04N5/347
摘要： A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.
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公开(公告)号：US11343439B2
公开(公告)日：2022-05-24
申请号：US16776849
申请日：2020-01-30
摘要： A high dynamic range imaging pixel may include first and second photodiodes that generate charge in response to incident light. The second photodiode may have a higher sensitivity than the first photodiode. When generated charge in the first photodiode exceeds a given charge level, the charge may overflow through a transistor to a capacitor. The overflow path from the first photodiode to the capacitor may optionally pass through the floating diffusion region. A transistor may be coupled between the first and second photodiodes. A gain select transistor may be coupled between the floating diffusion region and the capacitor. After sampling the overflow charge, the charge from both the first and second photodiodes may be sampled. In one arrangement, overflow charge may be transferred to a capacitor in a subsequent row.
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公开(公告)号：US20220159208A1
公开(公告)日：2022-05-19
申请号：US17440260
申请日：2020-03-11
发明人： TAKASHI MACHIDA
IPC分类号： H04N5/3745 , H04N5/369 , H04N5/378 , H04N5/374 , H01L27/146
摘要： To provide an imaging device that allows miniaturization to be achieved in an in-plane direction without impairing operation performance. This imaging device includes a plurality of pixels each having a stacked structure of a photoelectric conversion unit formation region and an electric charge holding unit formation region. The photoelectric conversion unit formation region includes a photoelectric conversion unit and has a first planar shape in a plane extending in a first direction and a second direction. The photoelectric conversion unit is configured to generate electric charge through photoelectric conversion. The electric charge corresponds to an amount of received light. The first direction and the second direction are orthogonal to each other. The first planar shape has a first aspect ratio. The electric charge holding unit formation region includes an electric charge holding unit and has a second planar shape in the plane. The electric charge holding unit is configured to hold the electric charge. The second planar shape has a second aspect ratio different from the first aspect ratio.
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公开(公告)号：US20220159205A1
公开(公告)日：2022-05-19
申请号：US17435279
申请日：2019-12-18
摘要： A pixel addition processing unit 35 adds pupil division pixel signals with a plurality of different addition patterns in pupil units to generate a pixel addition image for each addition pattern. Further, the pixel addition processing unit 35 may use a pupil division pixel signal in which a sensitivity difference between pupil division pixels has been corrected, and the addition pattern may be set on the basis of image characteristic information calculated by using the pupil division pixel signal. A super-resolution processing unit 36 performs super-resolution processing using a pixel addition image signal generated for each addition pattern by the pixel addition processing unit 35 to generate an image signal with a higher resolution than that of the pixel addition image signal. A high-resolution image can be generated using pupil division.
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136.发明申请公开(公告)号：US20220150436A1
公开(公告)日：2022-05-12
申请号：US17585808
申请日：2022-01-27
申请人： NIKON CORPORATION
发明人： Hironobu MURATA
IPC分类号： H04N5/3745 , G02B3/00 , G02B5/20 , H01L27/146 , H04N5/232 , H04N9/04 , H04N5/369 , H04N5/374
摘要： An image sensor includes a first photoelectric conversion unit that converts light incident through a first opening to an electric charge, a second photoelectric conversion unit that converts light incident through a second opening which is smaller than the first opening to an electric charge, and a signal output wiring that outputs a first signal generated by the electric charge converted by the first photoelectric conversion unit and a second signal generated by the electric charge converted by the second photoelectric conversion unit. The second photoelectric conversion unit is disposed between the second opening and the signal output wiring.
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公开(公告)号：US20220149090A1
公开(公告)日：2022-05-12
申请号：US17579391
申请日：2022-01-19
发明人： Yusuke OTAKE , Toshifumi WAKANO
IPC分类号： H01L27/146 , H04N5/369 , H04N5/3745 , H04N5/378
摘要： The present technology relates to a light detecting element and a method of manufacturing the same that make it possible to reduce pixel size. The light detecting element includes a plurality of pixels arranged in the form of a matrix. Each of the pixels includes a first semiconductor layer of a first conductivity type formed in an outer peripheral portion in the vicinity of a pixel boundary, and a second semiconductor layer of a second conductivity type opposite from the first conductivity type formed on the inside of the first semiconductor layer as viewed in plan. A high field region formed by the first semiconductor layer and the second semiconductor layer when a reverse bias voltage is applied is configured to be formed in a depth direction of a substrate. The present technology is, for example, applicable to a photon counter or the like.
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公开(公告)号：US20220149089A1
公开(公告)日：2022-05-12
申请号：US17515769
申请日：2021-11-01
发明人： Donghoon KHANG , Kwangyoung OH , Chongkwang CHANG , Jinyoung KIM , Taehun LEE
IPC分类号： H01L27/146 , H04N5/369
摘要： An image sensor includes: a semiconductor substrate having a first side and a second side opposite to each other; a plurality of photoelectric regions arranged in the semiconductor substrate in a first direction and a second direction, perpendicular to each other, in a first region of the semiconductor substrate; and a first separation structure disposed between the plurality of photoelectric regions in the first region of the semiconductor substrate. The first separation structure includes a lower separation structure and an upper separation structure disposed above the lower separation structure, and the first separation structure includes a linear portion located between the plurality of photoelectric regions and extending in the first direction, wherein, in a cross-sectional structure of the linear portion of the first separation structure in the first direction, at least one of an upper surface of the lower separation structure and a lower surface of the upper separation structure has a wavy shape.
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公开(公告)号：US11329093B2
公开(公告)日：2022-05-10
申请号：US16840208
申请日：2020-04-03
发明人： Shinji Kodaira , Takehito Okabe , Mitsuhiro Yomori , Nobuyuki Endo , Tomoyuki Tezuka , Toshihiro Shoyama , Jun Iwata
IPC分类号： H01L27/146 , H04N5/369
摘要： A photoelectric conversion apparatus includes a semiconductor substrate including a photoelectric conversion portion, a metal containing portion provided on the semiconductor substrate, an interlayer insulation film arranged on the semiconductor substrate to cover the metal containing portion, a first silicon nitride layer arranged on the photoelectric conversion portion to include a portion lying between the interlayer insulation film and the semiconductor substrate, a silicon oxide film including a portion arranged between the first silicon nitride layer and the photoelectric conversion portion, and a portion arranged between the interlayer insulation film and the metal containing portion, a second silicon nitride layer arranged between the silicon oxide film and the metal containing portion.
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公开(公告)号：US20220141403A1
公开(公告)日：2022-05-05
申请号：US17578601
申请日：2022-01-19
申请人： APPLE INC.
摘要： Various implementations disclosed herein include devices, systems, and methods implemented by an electronic device with an imaging sensor including a plurality of pixels (e.g., a matrix of pixels) that each are capable of detecting illumination intensity or contrast change using at least one shared photosensor. In some implementations, the imaging sensor is capable of operating in a first illumination intensity detecting mode (e.g., in a frame-based camera mode) or in a second contrast change detecting mode (e.g., in an event camera mode). In some implementations, the first illumination intensity detecting mode and the second contrast change detecting mode are mutually exclusive. In some implementations, pixels at an imaging sensor include two transfer transistors (e.g., gates) where a first transfer transistor allows intensity detection, and a second transfer transistor allows contrast change detection.
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