公开(公告)号：US20240365574A1

公开(公告)日：2024-10-31

申请号：US18290934

申请日：2022-03-16

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION ,  SONY GROUP CORPORATION

发明人： YOSUKE SAITO ,  MASATO KANNO ,  SHINNOSUKE HATTORI ,  HAJIME KOBAYASHI ,  TAKEO TSUKAMOTO ,  YUSHIRO NAKAGOME ,  CHIAKI TAKAHASHI ,  MIKA INABA ,  YOSUKE SUDA ,  KEI FUKUHARA ,  HIDEAKI MOGI

IPC分类号： H10K39/00 ,  H01L25/16 ,  H01L27/146 ,  H10K30/30 ,  H10K39/32

CPC分类号： H10K39/601 ,  H01L25/167 ,  H01L27/14645 ,  H10K30/30 ,  H10K39/32

摘要： An imaging element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; an organic layer provided between the first electrode and the second electrode and at least including a photoelectric conversion layer; and a first semiconductor layer provided between the second electrode and the organic layer and having an electron affinity of 4.5 eV or more and 6.0 eV or less, the first semiconductor layer including a first carbon-containing compound and a second carbon-containing compound, the first carbon-containing compound having an electron affinity greater than 4.8 eV or an electron affinity greater than a work function of the second electrode, the second carbon-containing compound having an ionization potential greater than 5.5 eV.

公开(公告)号：US20220165781A1

公开(公告)日：2022-05-26

申请号：US17539552

申请日：2021-12-01

申请人： SONY GROUP CORPORATION

发明人： HIDEAKI MOGI ,  YOHEI HIROSE ,  SHINTAROU HIRATA ,  YUYA KUMAGAI ,  TETSUJI YAMAGUCHI ,  MASAKI MURATA ,  YASUHARU UJIIE

IPC分类号： H01L27/146 ,  H04N5/369

摘要： The present disclosure relates to a solid-state image sensor and an electronic apparatus that suppress a decrease in light collection efficiency and degradation in oblique light resistance and enable a reduction in the height of a solid-state image sensor. A solid-state image sensor according to a first aspect of the present disclosure is a solid-state image sensor of a vertical spectral diffraction type in which a plurality of photoelectric conversion units are stacked in a region of each pixel, the solid-state image sensor including: a first photoelectric conversion module that includes a first photoelectric conversion unit configured to perform photoelectric conversion on light in a first wavelength range of incident light, a first upper electrode and a first lower electrode formed with the first photoelectric conversion unit placed between the first upper electrode and the first lower electrode, and a first spectral correction unit formed between the first upper electrode and the first lower electrode to be stacked on the first photoelectric conversion unit; and a second photoelectric conversion unit configured to perform photoelectric conversion on light in a second wavelength range of light that has passed through the first photoelectric conversion module, the second wavelength range being different from the first wavelength range. The present disclosure can be applied to, for example, a CMOS image sensor.