公开(公告)号：US11205630B2

公开(公告)日：2021-12-21

申请号：US16586158

申请日：2019-09-27

Applicant: Intel Corporation

Inventor： Adel Elsherbini ,  Patrick Morrow ,  Johanna Swan ,  Shawna Liff ,  Mauro Kobrinksy ,  Van Le ,  Gerald Pasdast

IPC: H01L23/00 ,  H01L23/528 ,  H01L23/522 ,  H01L25/18 ,  H01L25/00 ,  H01L21/768 ,  H01L21/82 ,  H01L23/48

Abstract: A composite integrated circuit (IC) device structure comprising a host chip and a chiplet. The host chip comprises a first device layer and a first metallization layer. The chiplet comprises a second device layer and a second metallization layer that is interconnected to transistors of the second device layer. A top metallization layer comprising a plurality of first level interconnect (FLI) interfaces is over the chiplet and host chip. The chiplet is embedded between a first region of the first device layer and the top metallization layer. The first region of the first device layer is interconnected to the top metallization layer by one or more conductive vias extending through the second device layer or adjacent to an edge sidewall of the chiplet.

公开(公告)号：US11189585B2

公开(公告)日：2021-11-30

申请号：US16703298

申请日：2019-12-04

Applicant: Intel Corporation

Inventor： Brennen K. Mueller ,  Adel Elsherbini ,  Mauro Kobrinsky ,  Johanna Swan ,  Shawna Liff ,  Pooya Tadayon

IPC: H01L23/52 ,  H01L23/00

Abstract: An Integrated Circuit (IC) device comprising a first component, the first component comprising a first dielectric and a plurality of adjacent first interconnect structures within the first dielectric. The IC device comprising a second component, the second component comprising a second dielectric and a plurality of adjacent second interconnect structures within the second dielectric. A first of the second interconnect structures is in direct contact with a first of the first interconnect structures at a bond interface between the first and second components. A second of the first interconnect structures is set back a distance from a plane of the bond interface.

公开(公告)号：US11094672B2

公开(公告)日：2021-08-17

申请号：US16586145

申请日：2019-09-27

Applicant: Intel Corporation

Inventor： Adel Elsherbini ,  Johanna Swan ,  Shawna Liff ,  Patrick Morrow ,  Gerald Pasdast ,  Van Le

IPC: H01L25/065 ,  H01L23/538 ,  H01L23/522 ,  H01L23/00 ,  H01L25/00

Abstract: Composite IC chip including a chiplet embedded within metallization levels of a host IC chip. The chiplet may include a device layer and one or more metallization layers interconnecting passive and/or active devices into chiplet circuitry. The host IC may include a device layer and one or more metallization layers interconnecting passive and/or active devices into host chip circuitry. Features of one of the chiplet metallization layers may be directly bonded to features of one of the host IC metallization layers, interconnecting the two circuitries into a composite circuitry. A dielectric material may be applied over the chiplet. The dielectric and chiplet may be thinned with a planarization process, and additional metallization layers fabricated over the chiplet and host chip, for example to form first level interconnect interfaces. The composite IC chip structure may be assembled into a package substantially as a monolithic IC chip.

公开(公告)号：US20210202347A1

公开(公告)日：2021-07-01

申请号：US16727703

申请日：2019-12-26

Applicant: Intel Corporation

Inventor： Shawna Liff ,  Adel Elsherbini ,  Johanna Swan ,  Jimin Yao ,  Veronica Strong

IPC: H01L23/373 ,  H01L23/48 ,  H01L25/065 ,  H01L21/768

Abstract: A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies.

公开(公告)号：US20210098411A1

公开(公告)日：2021-04-01

申请号：US16584522

申请日：2019-09-26

Applicant: Intel Corporation

Inventor： Shawna Liff ,  Adel Elsherbini ,  Johanna Swan ,  Nagatoshi Tsunoda ,  Jimin Yao

IPC: H01L23/00 ,  H01L23/498 ,  H01L21/48

Abstract: Embodiments include a mixed hybrid bonding structure comprising a composite dielectric layer, where the composite dielectric layer comprises an organic dielectric material having a plurality of inorganic filler material. One or more conductive substrate interconnect structures are within the composite dielectric layer. A die is on the composite dielectric layer, the die having one or more conductive die interconnect structures within a die dielectric material. The one or more conductive die interconnect structures are directly bonded to the one or more conductive substrate interconnect structures, and the inorganic filler material of the composite dielectric layer is bonded to the die dielectric material.

公开(公告)号：US10734735B2

公开(公告)日：2020-08-04

申请号：US16432651

申请日：2019-06-05

Applicant: Intel Corporation

Inventor： Telesphor Kamgaing ,  Adel Elsherbini

IPC: H01Q21/00 ,  H01Q21/22 ,  H01L23/00 ,  H01Q21/06 ,  H01Q23/00 ,  G06K19/077

Abstract: Embodiments described herein generally relate to phased array antenna systems or packages and techniques of making and using the systems and packages. A phased array antenna package may include a distributed phased array antenna comprising (1) a plurality of antenna sub-arrays, which may each include a plurality of antennas, (2) a plurality of Radio Frequency Dies (RFDs), each of the RFDs located proximate and electrically coupled by a trace of a plurality of traces to a corresponding antenna sub-array of the plurality of antenna sub-arrays, and (3) wherein each trace of the plurality of traces configured to electrically couple an antenna of the plurality of antennas to the RFD located proximate the antenna, wherein each trace of the plurality of traces is configured to transmit millimeter wave (mm-wave) radio signals, and wherein the plurality of traces are each of a substantially uniform length.

公开(公告)号：US10658312B2

公开(公告)日：2020-05-19

申请号：US15712270

申请日：2017-09-22

Applicant: Intel Corporation

Inventor： Telesphor Kamgaing ,  Adel Elsherbini ,  Valluri Rao

IPC: H01L23/66 ,  H01Q1/38 ,  H01L21/48 ,  H01L23/498 ,  H01L21/52 ,  H01L23/00 ,  H01Q1/22 ,  H01Q21/00 ,  H01Q23/00

Abstract: Embodiments of an embedded mm-wave radio integrated circuit into a substrate of a phased array module are disclosed. In some embodiments, the phased array module includes a first set of substrate layers made of a first material. The mm-wave radio integrated circuit may be embedded in the first set of substrate layers. A second set of substrate layers may be coupled to the first set of substrate layers. The second set of substrate layers may be made of a second material that has a lower electrical loss than the first material. The second set of substrate layers may include a plurality of antenna elements coupled through vias to the mm-wave radio integrated circuit.

公开(公告)号：US20200027811A1

公开(公告)日：2020-01-23

申请号：US16040746

申请日：2018-07-20

Applicant: Intel Corporation

Inventor： Feras Eid ,  Adel Elsherbini ,  Johanna Swan

IPC: H01L23/367 ,  H01L25/065 ,  H01L23/498

Abstract: An integrated circuit assembly may be formed having a substrate, a first integrated circuit device electrically attached to the substrate, a second integrated circuit device electrically attached to the first integrated circuit device, and a heat dissipation device comprising at least one first thermally conductive structure proximate at least one of the first integrated circuit device, the second integrated circuit device, and the substrate; and a second thermally conductive structure disposed over the first thermally conductive structure(s), the first integrated circuit device, and the second integrated circuit device, wherein the first thermally conductive structure(s) have a lower electrical conductivity than an electrical conductivity of the second thermally conductive structure. The first thermally conductive structure(s) may be formed by an additive process or may be pre-formed and attached to at least one of the first integrated circuit device, the second integrated circuit device, and the substrate.

公开(公告)号：US20190393131A1

公开(公告)日：2019-12-26

申请号：US16014312

申请日：2018-06-21

Applicant: Intel Corporation

Inventor： Feras Eid ,  Adel Elsherbini ,  Johanna Swan

IPC: H01L23/473 ,  H01L25/065 ,  H01L23/367

Abstract: An integrated circuit structure may be formed having a first integrated circuit device, a second integrated circuit device electrically coupled to the first integrated circuit device with a plurality of device-to-device interconnects, and at least one jumping drops vapor chamber between the first integrated circuit device and the second integrated circuit device wherein at least one device-to-device interconnect of the plurality of device-to-device interconnects extends through the jumping drops vapor chamber. In one embodiment, the integrated circuit structure may include three or more integrated circuit devices with at least two jumping drops vapor chambers disposed between the three or more integrated circuit devices. In a further embodiment, the two jumping drops chambers may be in fluid communication with one another.

公开(公告)号：US20190385932A1

公开(公告)日：2019-12-19

申请号：US16007260

申请日：2018-06-13

Applicant: Intel Corporation

Inventor： Feras Eid ,  Adel Elsherbini ,  Johanna Swan

IPC: H01L23/473 ,  H01L25/065 ,  H01L23/467 ,  H01L23/367 ,  H01L23/498 ,  H01L23/31

Abstract: An integrated circuit assembly may be formed having a substrate, a first integrated circuit device electrically attached to the substrate, a second integrated circuit device electrically attached to the first integrated circuit device, and a heat dissipation device defining a fluid chamber, wherein at least a portion of the first integrated circuit device and at least a portion of the second integrated circuit device are exposed to the fluid chamber. In further embodiments, at least one channel may be formed in an underfill material between the first integrated circuit device and the second integrated circuit device, between the first integrated circuit device and the substrate, and/or between the second integrated circuit device and the substrate, wherein the at least one channel is open to the fluid chamber.