公开(公告)号：US5792701A

公开(公告)日：1998-08-11

申请号：US954833

申请日：1997-10-21

申请人： Ying-Lang Wang ,  Yu-Jen Yu

发明人： Ying-Lang Wang ,  Yu-Jen Yu

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C30B31/16 ,  H01L21/223

CPC分类号： C23C16/45591 ,  C23C16/455 ,  C30B25/14 ,  C30B31/16

摘要： An apparatus for producing thin film coatings and/or dopant levels on semiconductor wafers or other substrates with improved film growth uniformity (of thickness and composition) and/or dopant uniformity is provided. The apparatus is positioned in a furnace tube between the wafers and a gas inlet. The apparatus comprises a conical shaped baffle.