公开(公告)号：US20080075453A1

公开(公告)日：2008-03-27

申请号：US11605179

申请日：2006-11-28

申请人： Hubert Utz

发明人： Hubert Utz

IPC分类号： G03B9/08

CPC分类号： G02B7/102 ,  G03B9/22

摘要： A shutter and aperture device of a miniature digital camera module is coupled to a moveable lens group and is controlled by a horological type stepper motor from a fixed position from outside the moveable lens group. The coupling element between the stepper motor and the shutter device is a mechanical drive apparatus that allows movement of the shutter device along an optical axis before, during and after adjustment of the shutter setting by the stepper motor. The stepper motor is driven with CMOS I/O allowing integration of all control circuitry, image processing circuitry and a pixel photo imager array into a system-on-chip integrated circuit chip.

摘要翻译： 微型数码相机模块的快门和光圈装置耦合到可移动透镜组，并且由可移动透镜组外部的固定位置由钟表型步进电机控制。 步进电机和快门装置之间的耦合元件是机械驱动装置，其允许在通过步进电机调节快门设置之前，期间和之后沿光轴移动快门装置。 步进电机采用CMOS I / O驱动，允许将所有控制电路，图像处理电路和像素照相成像器阵列集成到片上系统集成电路芯片中。

公开(公告)号：US07248347B2

公开(公告)日：2007-07-24

申请号：US10929300

申请日：2004-08-30

申请人： Horst Knoedgen ,  Dirk Huettmann

发明人： Horst Knoedgen ,  Dirk Huettmann

IPC分类号： G01B9/00

CPC分类号： H04N5/2257 ,  H04N17/002

摘要： An apparatus and method for automatically focusing a miniature digital camera module (MUT) is described. A MUT is loaded onto a test fixture and aligned with an optics system of a test handler. Focus targets contained within two target wheels are positioned over an optical centerline above the digital camera module using stepper motors. A field lens is positioned to focus an image of the targets onto the lens opening of the MUT. The image can be of a single target or a combination of targets contained on the target wheels at various optical distances from the MUT. A focusing unit adjusts the lens cap of the MUT for a best focus setting and after the MUT has been tested the best focus setting if physically fixed by permanently connecting the lens cap to the body of the MUT.

摘要翻译： 描述了一种用于自动聚焦微型数字照相机模块（MUT）的装置和方法。 MUT被加载到测试夹具上并与测试处理器的光学系统对准。 包含在两个目标轮内的对焦目标位于使用步进电机的数码相机模块上方的光学中心线上。 定位镜头以将目标的图像聚焦到MUT的镜头开口上。 图像可以是与MUT的各种光学距离处的目标轮上包含的单个目标或目标组合。 聚焦单元调整MUT的镜头盖，以获得最佳对焦设置，并且在MUT测试完成后，如果通过将镜头盖永久连接到MUT的主体进行物理固定，则调整最佳对焦设置。

公开(公告)号：US07247898B2

公开(公告)日：2007-07-24

申请号：US11028772

申请日：2005-01-04

申请人： Taner Dosluoglu

发明人： Taner Dosluoglu

IPC分类号： H01L29/76

CPC分类号： H01L27/14632 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14654 ,  H01L31/112

摘要： An active pixel sensor circuit comprising a photodiode, a storage node, and a transfer gate between the photodiode and storage node, where the potential barrier between the photodiode and the storage region is maintained during charge accumulation, thereby preventing charge tunneling between the photodiode and the storage region. This is achieved by electrically connecting the transfer gate, which controls charge transfer between the photodiode and the storage region, to the storage region. Connecting the transfer gate to the storage region maintains the potential barrier between the photodiode and the storage region at a threshold voltage during the charge integration period which prevents charge tunneling between the photodiode and the storage node. The threshold voltage is determined by the implant levels used to form the active pixel sensor and can be optimized by using optimum implant levels. This prevention of charge tunneling between the photodiode and the storage node eliminates image lag.

摘要翻译： 一种有源像素传感器电路，包括在光电二极管和存储节点之间的光电二极管，存储节点和传输门，其中在电荷累积期间保持光电二极管和存储区之间的势垒，由此防止光电二极管和 存储区域。 这通过将控制光电二极管和存储区域之间的电荷转移的传输门电连接到存储区域来实现。 将传输栅极连接到存储区域在电荷积分期间在阈值电压下保持光电二极管和存储区域之间的势垒，从而防止光电二极管和存储节点之间的电荷隧穿。 阈值电压由用于形成有源像素传感器的注入电平确定，并且可以通过使用最佳植入电平进行优化。 这种防止光电二极管和存储节点之间的电荷隧道的消除消除了图像滞后。

公开(公告)号：US20060278905A1

公开(公告)日：2006-12-14

申请号：US11508354

申请日：2006-08-23

申请人： Taner Dosluoglu ,  Nathaniel McCaffrey

发明人： Taner Dosluoglu ,  Nathaniel McCaffrey

IPC分类号： H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/14632 ,  H01L27/14643 ,  H01L31/112

摘要： A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N− well. The N− well is in a P+ type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS transistors formed within the N− well will not affect the collection of the photo-generated charge as long as the source and drain potentials of the PMOS transistors are set at a lower potential than the N− well potential so that they remain reverse biased with respect to the N− well. One of the P+ regions used to form the source and drain regions can be used to reset the pixel after it has been read in preparation for the next cycle of accumulating photo-generated charge. The N− well forms a second gate for the dual gate PMOS transistor since the potential of the N− well 12 affects the conductivity of the channel of the PMOS transistor. The addition of two NMOS transistors enables the readout signal to be stored at the gate of one of the NMOS transistors thereby making a snapshot imager possible. The circuit can be expanded to form two PMOS transistors sharing a common drain in the N− well.

摘要翻译： 具有双栅极PMOS的像素电路通过在N阱中形成两个P + +区形成。 N＆lt;＆gt;井是在P + +型衬底中。 两个P + SUP区域形成PMOS晶体管的源极和漏极。 形成在N阱内的PMOS晶体管不会影响光电荷的收集，只要PMOS晶体管的源极和漏极电位被设置在比N - 阱电位，使得它们相对于N 阱保持反向偏置。 用于形成源极和漏极区域的一个P + SUP区域可用于在读取该像素以准备下一个累积光电荷循环之后复位像素。 由于NΩ阱12的电位影响PMOS晶体管的沟道的导电性，因此N阱构成了双栅极PMOS晶体管的第二栅极。 添加两个NMOS晶体管使读出信号能够存储在NMOS晶体管之一的栅极处，从而使快照成像器成为可能。 该电路可以扩展以形成在N阱中共享一个共同漏极的两个PMOS晶体管。

公开(公告)号：US07146040B2

公开(公告)日：2006-12-05

申请号：US10277068

申请日：2002-10-21

申请人： Anders Johannesson ,  Ingemar Larsson

发明人： Anders Johannesson ,  Ingemar Larsson

IPC分类号： G06K9/00

CPC分类号： H04N9/735

摘要： A method and a system for an automatic white balancing of color images being exposed to different illuminants have been achieved. The color information from the sensor color channels is measured and averaged over all pixels belonging to each of the colors of the color array used. The result is equivalent to what color a 1-pixel camera would see if pointed to the same scene. From this “statistical pixel” the ratios of the colors involved are calculated. Pictures taken in different illuminants as e.g. daylight, fluorescent light or incandescent light can then be separated due to their location in different categories in a space defined by said ratios of the colors involved. Each category has predefined white balance factors, which are applied to the image now.

摘要翻译： 已经实现了曝光于不同光源的彩色图像的自动白平衡的方法和系统。 传感器颜色通道中的颜色信息被测量并在属于所使用的颜色阵列的每个颜色的所有像素上进行平均。 结果相当于一个1像素的相机会看到如果指向同一个场景的颜色。 从这个“统计像素”中，计算所涉及颜色的比率。 以不同光源拍摄的照片，例如 日光，荧光灯或白炽灯可以由于它们在由所涉及的颜色比率所限定的空间中的不同类别中的位置而被分离。 每个类别都有预定义的白平衡因子，现在应用于图像。

公开(公告)号：US20080075446A1

公开(公告)日：2008-03-27

申请号：US11527296

申请日：2006-09-26

申请人： Hubert Utz

发明人： Hubert Utz

IPC分类号： G03B3/10

CPC分类号： G02B7/102

摘要： A horological motor of the Lavet motor concept is used to form an actuator to control movement of a lens system to reduce power consumption in digital camera units used in various electronic equipment, e.g. PDA's, mobile phones, digital still cameras and camcorders, and as a result increase battery life. The coils of the horological motor are driven with CMOS I/O signals eliminating the need for high current motor drivers and allowing the integration of all picture capture functions, including the light sensitive pixel array, into a single chip to form a system on chip implementation. A plurality of actuators is used to control a lens system comprising auto focus, zoom and shutter and iris functions. A gear transmission system is used to allow the motor of the actuator to move in micro step, which allows calibration of the motor against mechanical barriers.

摘要翻译： 使用Lavet电机概念的钟表电机形成致动器以控制透镜系统的运动，以减少在各种电子设备中使用的数码相机单元中的功耗。 PDA，手机，数码相机和摄像机，从而延长电池寿命。 钟表电机的线圈采用CMOS I / O信号驱动，无需大电流电机驱动器，并可将所有图像捕捉功能（包括光敏像素阵列）集成到单个芯片中，形成片上系统 。 多个致动器用于控制包括自动聚焦，变焦和快门和光圈功能的透镜系统。 齿轮传动系统用于允许致动器的电动机以微步进移动，这允许电机校准机械屏障。

公开(公告)号：US07238993B2

公开(公告)日：2007-07-03

申请号：US11068283

申请日：2005-02-28

申请人： Taner Dosluoglu ,  Nathaniel Joseph McCaffrey

发明人： Taner Dosluoglu ,  Nathaniel Joseph McCaffrey

IPC分类号： H01L29/76

CPC分类号： H01L27/14609 ,  H01L27/14632 ,  H01L27/14643 ,  H01L31/112

摘要： A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N− well. The N− well is in a P− type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS transistors formed within the N− well will not affect the collection of the photo-generated charge as long as the source and drain potentials of the PMOS transistors are set at a lower potential than the N− well potential so that they remain reverse biased with respect to the N− well. One of the P+ regions used to form the source and drain regions can be used to reset the pixel after it has been read in preparation for the next cycle of accumulating photo-generated charge. The N− well forms a second gate for the dual gate PMOS transistor since the potential of the N− well 12 affects the conductivity of the channel of the PMOS transistor. The addition of two NMOS transistors enables the readout signal to be stored at the gate of one of the NMOS transistors thereby making a snapshot imager possible. The circuit can be expanded to form two PMOS transistors sharing a common drain in the N− well.

摘要翻译： 具有双栅极PMOS的像素电路通过在N阱中形成两个P + +区形成。 N＆lt;＆gt; - 孔是在P + - SUP型衬底中。 两个P + SUP区域形成PMOS晶体管的源极和漏极。 形成在N阱内的PMOS晶体管不会影响光电荷的收集，只要PMOS晶体管的源极和漏极电位被设置在比N - 阱电位，使得它们相对于N 阱保持反向偏置。 用于形成源极和漏极区域的一个P + SUP区域可用于在读取该像素以准备下一个累积光电荷循环之后复位像素。 由于NΩ阱12的电位影响PMOS晶体管的沟道的导电性，因此N阱构成了双栅极PMOS晶体管的第二栅极。 添加两个NMOS晶体管使读出信号能够存储在NMOS晶体管之一的栅极处，从而使快照成像器成为可能。 该电路可以扩展以形成在N阱中共享一个共同漏极的两个PMOS晶体管。

公开(公告)号：US07109537B2

公开(公告)日：2006-09-19

申请号：US11068365

申请日：2005-02-28

申请人： Taner Dosluoglu ,  Nathaniel Joseph McCaffrey

发明人： Taner Dosluoglu ,  Nathaniel Joseph McCaffrey

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14632 ,  H01L27/14643 ,  H01L31/112

摘要： A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N− well. The N− well is in a P− type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS transistors formed within the N− well will not affect the collection of the photo-generated charge as long as the source and drain potentials of the PMOS transistors are set at a lower potential than the N− well potential so that they remain reverse biased with respect to the N− well. One of the P+ regions used to form the source and drain regions can be used to reset the pixel after it has been read in preparation for the next cycle of accumulating photo-generated charge. The N− well forms a second gate for the dual gate PMOS transistor since the potential of the N− well 12 affects the conductivity of the channel of the PMOS transistor. The addition of two NMOS transistors enables the readout signal to be stored at the gate of one of the NMOS transistors thereby making a snapshot imager possible. The circuit can be expanded to form two PMOS transistors sharing a common drain in the N− well.

摘要翻译： 具有双栅极PMOS的像素电路通过在N阱中形成两个P + +区形成。 N＆lt;＆gt; - 孔是在P + - SUP型衬底中。 两个P + SUP区域形成PMOS晶体管的源极和漏极。 形成在N阱内的PMOS晶体管不会影响光电荷的收集，只要PMOS晶体管的源极和漏极电位被设置在比N - 阱电位，使得它们相对于N 阱保持反向偏置。 用于形成源极和漏极区域的一个P + SUP区域可用于在读取该像素以准备下一个累积光电荷循环之后复位像素。 由于NΩ阱12的电位影响PMOS晶体管的沟道的导电性，因此N阱构成了双栅极PMOS晶体管的第二栅极。 添加两个NMOS晶体管使读出信号能够存储在NMOS晶体管之一的栅极处，从而使快照成像器成为可能。 该电路可以扩展以形成在N阱中共享一个共同漏极的两个PMOS晶体管。