公开(公告)号：US12113141B2

公开(公告)日：2024-10-08

申请号：US17743005

申请日：2022-05-12

申请人： ARTILUX, INC.

发明人： Yun-Chung Na ,  Chien-Yu Chen ,  Yen-Ju Lin

IPC分类号： H01L31/0352 ,  H01L27/144 ,  H01L31/107 ,  H01L31/112

CPC分类号： H01L31/035272 ,  H01L27/1446 ,  H01L31/107 ,  H01L31/112

摘要： An optical sensing apparatus is provided. The optical sensing apparatus includes a substrate, one or more pixels supported by the substrate, where each of the one or more pixels includes an absorption region, a field control region, a first contact region, a second contact region and a carrier confining region. The field control region and the first contact region are doped with a dopant of a first conductivity type. The second contact region is doped with a dopant of a second conductivity type. The carrier confining region includes a first barrier region and a channel region, where the first barrier region is doped with a dopant of the second conductivity type and has a first peak doping concentration, and where the channel region is intrinsic or doped with a dopant of the second conductivity type and has a second peak doping concentration lower than the first peak doping concentration.

公开(公告)号：US11777050B2

公开(公告)日：2023-10-03

申请号：US17238250

申请日：2021-04-23

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Shinichi Machida ,  Takeyoshi Tokuhara ,  Sanshiro Shishido

IPC分类号： H01L31/112 ,  H10K30/35 ,  H01L31/0352

CPC分类号： H01L31/1129 ,  H01L31/035218 ,  H01L31/112 ,  H10K30/35

摘要： An optical sensor includes: a photosensitive layer that absorbs incident light to generate a first carrier with a first polarity and a second carrier with a second polarity different from the first polarity; a channel layer that is electrically connected to the photosensitive layer and that conducts the first carrier that has moved from the photosensitive layer; a counter electrode facing the channel layer through the photosensitive layer; an insulating layer positioned between the photosensitive layer and the counter electrode; and a source electrode and a drain electrode each electrically connected to the channel layer.

公开(公告)号：US20190252425A1

公开(公告)日：2019-08-15

申请号：US16267119

申请日：2019-02-04

申请人： CANON KABUSHIKI KAISHA

发明人： Toshiyuki Ogawa

IPC分类号： H01L27/146 ,  H01L31/112

CPC分类号： H01L27/1463 ,  H01L27/14636 ,  H01L31/112

摘要： A photoelectric conversion device has an isolation structure. First and second isolation portions are provided between first and second photoelectric conversion elements. The first isolation portion extends from a first plane of a semiconductor layer to a position corresponding to at least a quarter of a length from the first plane to a second plane of the semiconductor layer. The second isolation portion extends from the second plane of the semiconductor layer to a position corresponding to at least a quarter of the length from the first plane to the second plane.

公开(公告)号：US20190097076A1

公开(公告)日：2019-03-28

申请号：US15971543

申请日：2018-05-04

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Xueyou CAO ,  Xue DONG ,  Haisheng WANG ,  Xiaoliang DING ,  Yingming LIU ,  Yanling HAN ,  Yuzhen GUO ,  Pengpeng WANG ,  Chihjen CHENG ,  Ping ZHANG ,  Wei LIU ,  Likai DENG ,  Yangbing LI

IPC分类号： H01L31/112 ,  B81B1/00 ,  B01L3/00

CPC分类号： H01L31/1126 ,  B01L3/5027 ,  B01L3/502715 ,  B01L3/502792 ,  B01L2200/02 ,  B01L2200/0673 ,  B01L2300/0645 ,  B01L2300/0654 ,  B01L2300/0887 ,  B01L2300/165 ,  B01L2400/0427 ,  B81B1/00 ,  B81B2201/058 ,  G01N27/44721 ,  G09G3/344 ,  H01L27/3227 ,  H01L31/112

摘要： A microfluidic system includes a liquid drop accommodation space, an array of photosensitivity detection circuits and an array of driving circuits between an upper substrate and a lower substrate. Each photosensitivity detection circuit includes a photosensitive transistor and a first gating transistor. The photosensitive transistor has a gate electrode coupled to a first scan signal line, a source electrode coupled to a first power supply voltage signal line, and a drain electrode coupled to a source electrode of the first gating transistor. The first gating transistor has a gate electrode coupled to a second scan signal line, and a drain electrode coupled to a read signal line. Each driving circuit includes a driving transistor and a driving electrode. The driving transistor has a gate electrode coupled to a third scan signal line, a source electrode coupled to a data signal line, and a drain electrode coupled to the driving electrode.

公开(公告)号：US20190051699A1

公开(公告)日：2019-02-14

申请号：US15898354

申请日：2018-02-16

申请人： King Fahd University of Petroleum and Minerals

发明人： Khalil Harrabi

IPC分类号： H01L27/18 ,  H01L39/22 ,  H01L39/08 ,  H01L31/112 ,  H01L31/0352 ,  H01L39/10

CPC分类号： H01L27/18 ,  G01J2001/442 ,  H01L31/035227 ,  H01L31/112 ,  H01L39/08 ,  H01L39/10 ,  H01L39/228

摘要： A multiple arrayed parallel nanowire device includes one or more arrays connected in series, wherein each array includes a plurality of narrow nanowires flanked by one or more wide nanowires, a top electrode, an applied current, a bottom ground electrode, and one or more lateral electrodes where one or more currents or one or more probing voltages can be applied to detect voltage changes in each array. The device detects single and multiple photons without destroying superconductivity in all the nanowires in the array and is thus capable of remaining sensitive to subsequent photon impacts. Moreover, the device can resolve the location of each photon impact.

公开(公告)号：US20180374886A1

公开(公告)日：2018-12-27

申请号：US16013166

申请日：2018-06-20

申请人： CANON KABUSHIKI KAISHA

发明人： Junji Iwata ,  Yoichi Wada ,  Yoichiro Handa ,  Daichi Seto ,  Hideyuki Ito ,  Ginjiro Toyoguchi ,  Hajime Ikeda ,  Masahiro Kobayashi

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L31/112

CPC分类号： H01L27/14627 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14812 ,  H01L31/03529 ,  H01L31/103 ,  H01L31/112

摘要： According to one aspect of the invention, provided is a solid state imaging device having a pixel including a photoelectric conversion portion provided in a semiconductor substrate. The photoelectric conversion portion includes first and second charge accumulation region of a first conductivity type provided at a first depth of the semiconductor substrate and spaced apart from each other by a first gap, and first and second semiconductor region of a second conductivity type provided at a second depth located under the first depth of the semiconductor substrate and extend over the first charge accumulation region, the first gap, and the second charge accumulation region in a planar view. At the second depth, an impurity concentration of the second conductivity type in a region under the first gap is higher than an impurity concentration of the second conductivity type in a region under the first and second charge accumulation regions.

公开(公告)号：US20180138231A1

公开(公告)日：2018-05-17

申请号：US15805743

申请日：2017-11-07

申请人： SAMSUNG ELECTRONICS CO., LTD. ,  INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY

发明人： Unjeong KIM ,  Younggeun ROH ,  Jaeseok KIM ,  Chihun IN ,  Hyunyong CHOI ,  Jaehyun KWON

IPC分类号： H01L27/146 ,  H01L31/08 ,  H01L43/08 ,  H01L31/0232 ,  H01L31/0296

CPC分类号： H01L27/14649 ,  H01F1/0009 ,  H01L27/1462 ,  H01L27/14625 ,  H01L29/785 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/08 ,  H01L31/09 ,  H01L31/112 ,  H01L43/08 ,  H01L49/006 ,  Y02E10/547

摘要： An optical sensor is disclosed. The optical sensor may include a substrate, a topological insulator layer formed on the substrate, an oxide layer formed on the topological insulator layer, a graphene layer stacked on the oxide layer, and a dielectric layer covering the graphene layer.

公开(公告)号：US09941430B2

公开(公告)日：2018-04-10

申请号：US15442113

申请日：2017-02-24

申请人： HITACHI, LTD.

发明人： Aleksey Andreev ,  David Williams ,  Ryuta Tsuchiya ,  Yuji Suwa

IPC分类号： H01L29/06 ,  H01L31/0352 ,  H01L31/028 ,  H01L31/024 ,  H01L33/06 ,  H01L33/34 ,  H01L33/64 ,  H01L31/112 ,  H01L33/00 ,  G06N99/00 ,  B82Y10/00 ,  B82Y20/00

CPC分类号： H01L31/035218 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  G06N99/002 ,  H01L29/0649 ,  H01L29/127 ,  H01L29/66977 ,  H01L29/7613 ,  H01L31/024 ,  H01L31/028 ,  H01L31/112 ,  H01L33/0041 ,  H01L33/06 ,  H01L33/34 ,  H01L33/64 ,  Y10S977/774 ,  Y10S977/814 ,  Y10S977/933 ,  Y10S977/95 ,  Y10S977/954

摘要： A silicon-based quantum dot device (1) is disclosed. The device comprises a substrate (8) and a layer (7) of silicon or silicon-germanium supported on the substrate which is configured to provide at least one quantum dot (51, 52: FIG. 5). The layer of silicon or silicon-germanium has a thickness of no more than ten monolayers. The layer of silicon or silicon-germanium may have a thickness of no more than eight or five monolayers.

公开(公告)号：US20180094973A1

公开(公告)日：2018-04-05

申请号：US15444529

申请日：2017-02-28

申请人： STMicroelectronics (Rousset) SAS

发明人： Alexandre Sarafianos ,  Clement Champeix

IPC分类号： G01J1/44 ,  H01L31/112

CPC分类号： G01J1/44 ,  G01J2001/4238 ,  G06F21/87 ,  H01L23/576 ,  H01L31/03529 ,  H01L31/09 ,  H01L31/103 ,  H01L31/112

摘要： A laser detection device can be used to protect an integrated circuit. The device includes a detection cell having a buried channel of a first conductivity type extending in a substrate of the integrated circuit. The substrate is of a second conductivity type. The detection cell also has a first electrical connection coupling a first point in the buried channel to a supply voltage rail, and a second electrical connection coupled to a second point in the buried channel. A detection circuit is coupled to the second point in the buried channel via the second electrical connection and adapted to detect a fall in the voltage at the second point.

公开(公告)号：US20180054585A1

公开(公告)日：2018-02-22

申请号：US15559706

申请日：2016-03-02

申请人： Nokia Technologies Oy

发明人： Martti VOUTILAINEN ,  Sami KALLIOINEN

IPC分类号： H04N5/3745 ,  H01L31/0352

CPC分类号： H04N5/37455 ,  H01L27/142 ,  H01L27/14643 ,  H01L31/035218 ,  H01L31/112 ,  H04N5/374 ,  H04N5/378

摘要： An apparatus, including a quantum dot graphene field effect transistor configured to operate such that photons incident thereon cause electron-hole pairs to be formed; a connector element connected to the back gate of the transistor; a switch element as an output switch to provide an output for a current flowing through the transistor. The transistor is configured to be back gate biased via the connector element connected to the back gate such that the electrons or the holes formed are trapped in an at least one quantum dot and respectively the holes or the electrons migrate to the channel of the transistor. A drain to source voltage connected to the transistor causes a current proportional to the charge of the holes or electrons trapped at the quantum dots by the electrons or holes to flow in the channel.