公开(公告)号：US10221201B2

公开(公告)日：2019-03-05

申请号：US15386308

申请日：2016-12-21

Applicant: Aaron Reinicker ,  Ashwini K. Sinha ,  Qiong Guo

Inventor： Aaron Reinicker ,  Ashwini K. Sinha ,  Qiong Guo

IPC: C07F7/22 ,  C09D5/24 ,  H01L21/265 ,  C23C14/48 ,  H01J37/317

Abstract: A novel method and system for using certain tin compounds as dopant sources for ion implantation are provided. A suitable tin-containing dopant source material is selected based on one or more certain attributes. Some of these attributes include stability at room temperature; sufficient vapor pressure to be delivered from its source supply to an ion chamber and, the ability to produce a suitable beam current for ion implantation to achieve the required implant Sn dosage. The dopant source is preferably delivered from a source supply that actuates under sub atmospheric conditions to enhance the safety and reliability during operation.

公开(公告)号：US20190062901A1

公开(公告)日：2019-02-28

申请号：US16106197

申请日：2018-08-21

Applicant: Aaron Reinicker ,  Ashwini K Sinha ,  Douglas C Heiderman

Inventor： Aaron Reinicker ,  Ashwini K Sinha ,  Douglas C Heiderman

IPC: C23C14/48 ,  H01L21/265 ,  H01J37/32 ,  C23C14/14

CPC classification number: C23C14/48 ,  C23C14/14 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/022 ,  H01J2237/06 ,  H01L21/265 ,  H01L21/26513

Abstract: A novel method, composition and system for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture.

公开(公告)号：US20170190723A1

公开(公告)日：2017-07-06

申请号：US15386308

申请日：2016-12-21

Applicant: Aaron Reinicker ,  Ashwini K. Sinha ,  Qiong Guo

Inventor： Aaron Reinicker ,  Ashwini K. Sinha ,  Qiong Guo

IPC: C07F7/22 ,  H01L21/265 ,  C09D5/24

CPC classification number: C07F7/2208 ,  C09D5/24 ,  C23C14/48 ,  H01J37/317 ,  H01L21/26513 ,  H01L21/26546

Abstract: A novel method and system for using certain tin compounds as dopant sources for ion implantation are provided. A suitable tin-containing dopant source material is selected based on one or more certain attributes. Some of these attributes include stability at room temperature; sufficient vapor pressure to be delivered from its source supply to an ion chamber and, the ability to produce a suitable beam current for ion implantation to achieve the required implant Sn dosage. The dopant source is preferably delivered from a source supply that actuates under sub atmospheric conditions to enhance the safety and reliability during operation.