公开(公告)号：US09922802B2

公开(公告)日：2018-03-20

申请号：US14376697

申请日：2013-02-19

Applicant: Tokyo Electron Limited

Inventor： Taichi Hirano ,  Fumitoshi Kumagai

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/311 ,  G05B11/01 ,  H01L21/768

CPC classification number: H01J37/32045 ,  G05B11/01 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32935 ,  H01J2237/06 ,  H01J2237/3343 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H05H1/46 ,  H05H2001/4682 ,  Y10T307/367

Abstract: A power supply system 90 includes high frequency power supplies 92 and 93 that supply a high frequency power for plasma generation; a DC power supply 91 that supplies a DC voltage to be applied to an electrode; and control unit 94 that controls the high frequency power supplies 92 and 93 and the DC power supply 91 including a first DC power supply unit 101 that supplies a first negative DC voltage V1, a second DC power supply unit 102 that supplies a second negative DC voltage V2 having a higher absolute value than the first negative DC voltage V1, and a selecting circuit 103 that selectively connects the first DC power supply unit 101 and the second DC power supply unit 102 to the electrode; and a discharging circuit 104 connected with a node 109 between the first DC power supply unit 101 and the selecting circuit 103.

公开(公告)号：US20150097123A1

公开(公告)日：2015-04-09

申请号：US14376901

申请日：2013-01-28

Applicant: Hitachi High-Technologies Corporation

Inventor： Yasushi Ebizuka ,  Seiichiro Kanno ,  Makoto Nishihara ,  Masashi Fujita

IPC: H01J37/22 ,  H01J37/28 ,  H01J37/20 ,  H02N13/00

CPC classification number: H01J37/226 ,  H01J37/026 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/0047 ,  H01J2237/06 ,  H01J2237/2007 ,  H01J2237/2801 ,  H02N13/00

Abstract: An object of the present invention is to provide a charged particle beam apparatus that effectively removes electrical charges from an electrostatic chuck.In order to achieve the above object, the charged particle beam apparatus of the present invention includes a sample chamber that maintains a space containing an electrostatic chuck mechanism (5) in a vacuum state; and in which the charged particle beam apparatus includes an ultraviolet light source (6) to irradiate ultraviolet light within the sample chamber, and a irradiation target member irradiated by the ultraviolet light; and the irradiation target member is placed perpendicular to the adsorption surface of the electrostatic chuck.

Abstract translation: 本发明的目的是提供一种有效地从静电卡盘去除电荷的带电粒子束装置。 为了实现上述目的，本发明的带电粒子束装置包括在真空状态下保持包含静电卡盘机构（5）的空间的样本室; 并且其中带电粒子束装置包括用于照射样品室内的紫外光的紫外光源和照射由紫外光照射的照射目标构件; 并且照射目标构件垂直于静电吸盘的吸附表面放置。

公开(公告)号：US20140158902A1

公开(公告)日：2014-06-12

申请号：US14165573

申请日：2014-01-27

Applicant: Applied Materials Israel, Ltd. ,  Carl Zeiss Microscopy GmbH

Inventor： Rainer Knippelmeyer ,  Oliver Kienzle ,  Thomas Kemen ,  Heiko Mueller ,  Stephan Uhlemann ,  Maximilian Haider ,  Antonio Casares ,  Steven Rogers

IPC: H01J37/30 ,  H01J37/317 ,  H01J37/10

CPC classification number: H01J37/04 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/10 ,  H01J37/14 ,  H01J37/153 ,  H01J37/28 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/047 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/06 ,  H01J2237/14 ,  H01J2237/2817 ,  H01J2237/31774

Abstract: A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.

Abstract translation: 粒子光学装置包括用于产生带电粒子束的带电粒子源; 布置在带电粒子束的光束路径中的多孔板，其中多孔板具有以预定的第一阵列图案形成在其中的多个孔，其中多个带电粒子子束由束形成 在多孔板下游的带电粒子，并且其中通过所述多个子束在所述装置的图像平面中形成多个束斑，所述多个束斑以第二阵列图案布置; 以及用于操纵带电粒子束和/或多个子束的粒子光学元件; 其中所述第一阵列图案在第一方向上具有第一图案规则性，并且所述第二阵列图案在与所述第一方向对应的电子 - 光学上的第二方向上具有第二图案规则性，并且其中所述第二规则性高于所述第一规则性。

公开(公告)号：US09673024B2

公开(公告)日：2017-06-06

申请号：US14975314

申请日：2015-12-18

Applicant: CARL ZEISS MICROSCOPY GMBH ,  APPLIED MATERIALS ISRAEL LTD.

Inventor： Rainer Knippelmeyer ,  Oliver Kienzle ,  Thomas Kemen ,  Heiko Mueller ,  Stephan Uhlemann ,  Maximilian Haider ,  Antonio Casares ,  Steven Rogers

IPC: H01J37/30 ,  H01J37/10 ,  H01J37/147 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/28 ,  H01J37/317 ,  H01J37/14

CPC classification number: H01J37/04 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/10 ,  H01J37/14 ,  H01J37/153 ,  H01J37/28 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/047 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/06 ,  H01J2237/14 ,  H01J2237/2817 ,  H01J2237/31774

Abstract: A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.

公开(公告)号：US07554094B2

公开(公告)日：2009-06-30

申请号：US11808845

申请日：2007-06-13

Applicant: Rainer Knippelmeyer ,  Oliver Kienzle ,  Thomas Kemen ,  Heiko Mueller ,  Stephan Uhlemann ,  Maximilian Haider ,  Antonio Casares

Inventor： Rainer Knippelmeyer ,  Oliver Kienzle ,  Thomas Kemen ,  Heiko Mueller ,  Stephan Uhlemann ,  Maximilian Haider ,  Antonio Casares

IPC: H01J1/50 ,  H01J37/28 ,  H01J37/244 ,  G21K5/10 ,  G21K7/00

CPC classification number: H01J37/04 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/10 ,  H01J37/14 ,  H01J37/153 ,  H01J37/28 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/047 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/06 ,  H01J2237/14 ,  H01J2237/2817 ,  H01J2237/31774

Abstract: An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.

Abstract translation: 电子 - 光学装置提供用于一次电子束的主光束路径和二次电子的次级光束路径。 电子 - 光学装置包括具有第一，第二和第三磁场区域的磁体装置。 第一磁场区域被主光束路径和次光束路径穿过。 第二磁场区域被布置在第一磁场区域的上游的主光束路径中，并且不被辅助光束路径穿过。 第一和第二磁场区域以基本上相反的方向偏转主光束路径。 第三磁场区域布置在第二磁场区域的下游的次级光束路径中，并且不被第一光束路径穿过。 第一和第三磁场区域以基本上相同的方向偏转次级光束路径。

公开(公告)号：US20090110951A1

公开(公告)日：2009-04-30

申请号：US11924692

申请日：2007-10-26

Applicant: Hong-Shi Kuo ,  Ing-shouh Hwang ,  Tien T. Tsong ,  Tsu-Yi Fu

Inventor： Hong-Shi Kuo ,  Ing-shouh Hwang ,  Tien T. Tsong ,  Tsu-Yi Fu

IPC: B21G1/00 ,  C22F1/14 ,  C21D9/26

CPC classification number: G01Q60/16 ,  C21D9/26 ,  C21D2201/04 ,  C22F1/14 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/28 ,  H01J37/285 ,  H01J37/3056 ,  H01J2201/30411 ,  H01J2201/30449 ,  H01J2209/0226 ,  H01J2237/06 ,  H01J2237/08 ,  H01J2237/0807 ,  H01J2237/3114 ,  Y10S977/848 ,  Y10S977/90 ,  Y10S977/949 ,  Y10S977/95 ,  Y10T428/12389

Abstract: A method for preparing an iridium tip with atomic sharpness. The method includes tapering an iridium wire to a needle shape and heating the iridium needle in an oxygen atmosphere. Also disclosed is an iridium needle having a pyramidal structure which terminates with a small number of atoms prepared by the methods.

Abstract translation: 一种制备原子锐度的铱尖的方法。 所述方法包括将铱丝丝逐渐变细为针状，并在氧气氛中加热铱针。 还公开了具有锥形结构的铱针，其以通过该方法制备的少量原子终止。

公开(公告)号：US20080054184A1

公开(公告)日：2008-03-06

申请号：US11808845

申请日：2007-06-13

Applicant: Rainer Knippelmeyer ,  Oliver Kienzle ,  Thomas Kemen ,  Heiko Mueller ,  Stephan Uhlemann ,  Maximilian Haider ,  Antonio Casares

Inventor： Rainer Knippelmeyer ,  Oliver Kienzle ,  Thomas Kemen ,  Heiko Mueller ,  Stephan Uhlemann ,  Maximilian Haider ,  Antonio Casares

IPC: H01J1/50

CPC classification number: H01J37/04 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/10 ,  H01J37/14 ,  H01J37/153 ,  H01J37/28 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/047 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/06 ,  H01J2237/14 ,  H01J2237/2817 ,  H01J2237/31774

Abstract: An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.

Abstract translation: 电子 - 光学装置提供用于一次电子束的主光束路径和二次电子的次级光束路径。 电子 - 光学装置包括具有第一，第二和第三磁场区域的磁体装置。 第一磁场区域被主光束路径和次光束路径穿过。 第二磁场区域被布置在第一磁场区域的上游的主光束路径中，并且不被辅助光束路径穿过。 第一和第二磁场区域以基本上相反的方向偏转主光束路径。 第三磁场区域布置在第二磁场区域的下游的次级光束路径中，并且不被第一光束路径穿过。 第一和第三磁场区域以基本上相同的方向偏转次级光束路径。

公开(公告)号：US20190062901A1

公开(公告)日：2019-02-28

申请号：US16106197

申请日：2018-08-21

Applicant: Aaron Reinicker ,  Ashwini K Sinha ,  Douglas C Heiderman

Inventor： Aaron Reinicker ,  Ashwini K Sinha ,  Douglas C Heiderman

IPC: C23C14/48 ,  H01L21/265 ,  H01J37/32 ,  C23C14/14

CPC classification number: C23C14/48 ,  C23C14/14 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/022 ,  H01J2237/06 ,  H01L21/265 ,  H01L21/26513

Abstract: A novel method, composition and system for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture.

公开(公告)号：US20160155602A1

公开(公告)日：2016-06-02

申请号：US14901506

申请日：2014-07-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Atsushi KAMINO ,  Hisayuki TAKASU ,  Hirobumi MUTO

IPC: H01J37/08 ,  H01J37/305 ,  H01J37/20 ,  H01J37/16 ,  H01J37/18

CPC classification number: H01J37/08 ,  H01J37/16 ,  H01J37/18 ,  H01J37/20 ,  H01J37/3053 ,  H01J2237/006 ,  H01J2237/06 ,  H01J2237/08 ,  H01J2237/182 ,  H01J2237/1825 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01J2237/31749

Abstract: This ion milling device is provided with a vacuum chamber (105), an exhaust device (101) for evacuating the interior of the vacuum chamber, a sample stage (103) for supporting a sample (102) to be irradiated inside the vacuum chamber, a heater (107) for heating the interior of the vacuum chamber, a gas source (106) for introducing into the vacuum chamber a gas serving as a heating medium, and a controller (110) for controlling the gas source, the controller controlling the gas source so that the vacuum chamber internal pressure is in a predetermined state during heating by the heater. This enables the control in a short time of the temperature for suppressing condensation, or the like, occurring at atmospheric release after cooling and ion milling a sample.

Abstract translation: 该离子研磨装置设置有真空室（105），用于抽空真空室内部的排气装置（101），用于支撑在真空室内照射的样品（102）的样品台（103） 用于加热真空室内部的加热器（107），用于将作为加热介质的气体引入真空室的气源（106），以及用于控制气源的控制器（110），控制器 气体源，使得真空室内部压力在加热器加热期间处于预定状态。 这使得能够在短时间内控制在冷却和离子研磨样品之后在大气释放下发生的冷凝等的抑制。

公开(公告)号：US08226884B2

公开(公告)日：2012-07-24

申请号：US12821480

申请日：2010-06-23

Applicant: Robin M. Forbes Jones

Inventor： Robin M. Forbes Jones

IPC: B22F9/14

CPC classification number: C22B9/04 ,  B22F9/14 ,  B22F2009/0836 ,  B22F2009/0848 ,  B22F2009/0888 ,  B22F2009/0896 ,  B22F2998/10 ,  B32B15/01 ,  C22B9/226 ,  C22B9/228 ,  C22C1/0433 ,  C22C19/055 ,  C22C19/056 ,  C23C4/06 ,  C23C4/123 ,  C23C4/137 ,  H01J37/305 ,  H01J2237/06 ,  H01J2237/063 ,  H01J2237/15 ,  H01J2237/16

Abstract: Methods and apparatus for producing large diameter superalloy ingots are disclosed. A material comprising at least one of a metal and a metallic alloy is introduced into a pressure-regulated chamber in a melting assembly. The material is subjected to a wide-area electron field within the pressure-regulated chamber to heat the material to a temperature above the melting temperature of the material to form a molten alloy. At least one stream of molten alloy from the pressure-regulated chamber is provided from the melting assembly and is fed into an atomizing assembly, where particles of the molten alloy are generated by impinging electrons on the molten alloy to atomize the molten alloy. At least one of an electrostatic field and an electromagnetic field are produced to influence the particles of the molten alloy. The particles of the molten alloy are deposited onto a collector in a spray forming operation to form an alloy ingot.

Abstract translation: 公开了用于生产大直径超合金锭的方法和装置。 将包括金属和金属合金中的至少一种的材料引入熔融组件中的压力调节室中。 该材料在压力调节室内经受广泛的电场，以将材料加热到高于材料的熔融温度的温度以形成熔融合金。 从熔融组件提供至少一个来自压力调节室的熔融合金流，并被送入雾化组件，其中熔融合金的颗粒通过在熔融合金上撞击电子而雾化熔融合金而产生。 产生静电场和电磁场中的至少一个以影响熔融合金的颗粒。 熔融合金的颗粒在喷射成型操作中沉积到集热器上以形成合金锭。