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公开(公告)号：US20120323508A1
公开(公告)日：2012-12-20
申请号：US13161954
申请日：2011-06-16
CPC分类号： G01R19/32 , G01R19/16519 , G01R19/16542 , G01R19/16576
摘要： A low voltage detector (100) includes a power supply voltage monitor circuit (110) that produces a voltage VSP related to a first a power supply voltage, and a voltage generator (105), which includes a plurality of self-cascode MOSFET (SCM) structures (101-103) in a cascade configuration, that generates a reference voltage Vxm. A voltage comparator (140) outputs an output signal in response to a differential between Vxm and VSP, wherein Vxm and VSP have proportional to absolute temperature behavior (PTAT) over temperature with respect to a second power supply voltage. The output signal changes state when the first power supply voltage equals a trip point of the comparator. Each SCM structure is sized to provide a rate of change with temperature of the PTAT behavior of Vxm that matches a rate of change with temperature of the PTAT behavior of VSP.
摘要翻译： 低电压检测器（100）包括产生与第一电源电压相关的电压VSP的电源电压监视电路（110）和包括多个自共源共栅MOSFET（SCM）的电压发生器（105） ）结构（101-103），其产生参考电压Vxm。 电压比较器（140）响应于Vxm和VSP之间的差分输出输出信号，其中Vxm和VSP与温度相对于第二电源电压的绝对温度特性（PTAT）成比例。 当第一电源电压等于比较器的跳变点时，输出信号改变状态。 每个SCM结构的大小可以提供与VMI的PTAT行为的温度的变化率，其与VSP的PTAT行为的温度的变化率匹配。
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公开(公告)号：US08305068B2
公开(公告)日：2012-11-06
申请号：US12626321
申请日：2009-11-25
IPC分类号： G05F3/16
CPC分类号： G05F3/262
摘要： A bandgap voltage reference unit on an integrated circuit (101) includes a proportional-to-absolute-temperature (PTAT) current source (100) coupled to a bandgap voltage reference circuit (200) that includes a plurality of self-cascode MOSFET structures (201-204) that are cascaded together to form a PTAT voltage generator (205). The bandgap voltage reference circuit also includes a complementary-to-absolute-temperature (CTAT) device (260). A PTAT voltage from the PTAT voltage generator is added to a CTAT voltage from the CTAT device to produce an output voltage of the bandgap voltage reference unit, such that the output voltage is the bandgap voltage of the integrated circuit and such that the output voltage does not change with temperature.
摘要翻译： 集成电路（101）上的带隙电压参考单元包括耦合到带隙电压参考电路（200）的比例绝对温度（PTAT）电流源（100），该带隙电压参考电路包括多个自共源共栅MOSFET结构 201-204），其级联在一起以形成PTAT电压发生器（205）。 带隙电压参考电路还包括互补绝对温度（CTAT）装置（260）。 来自PTAT电压发生器的PTAT电压被加到来自CTAT装置的CTAT电压，以产生带隙电压参考单元的输出电压，使得输出电压是集成电路的带隙电压，并且使得输出电压 温度不变。
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公开(公告)号：US07233539B2
公开(公告)日：2007-06-19
申请号：US11135963
申请日：2005-05-24
IPC分类号： G11C17/18
摘要： A non-volatile memory cell 100 includes a static latch 125 having a first terminal and a second terminal, a first transistor 124 having a first current electrode coupled to said first terminal of said static latch 125 and a fusible element 110 having a first terminal coupled to a second current electrode of the first transistor 125 and a second terminal coupled to a first power supply voltage terminal. In a particular embodiment, the non-volatile memory cell includes a fusible element programming circuit 140 coupled to the first terminal of said fusible element. In another particular embodiment, the non-volatile memory cell includes a cell preset circuit 120 coupled to a control electrode of the first transistor.
摘要翻译： 非易失性存储单元100包括具有第一端子和第二端子的静态锁存器125，第一晶体管124，其具有耦合到所述静态锁存器125的所述第一端子的第一电流电极和可熔元件110，第一端子耦合 耦合到第一晶体管125的第二电流电极和耦合到第一电源电压端子的第二端子。 在特定实施例中，非易失性存储单元包括耦合到所述可熔元件的第一端子的可熔元件编程电路140。 在另一特定实施例中，非易失性存储单元包括耦合到第一晶体管的控制电极的单元预置电路120。
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公开(公告)号：US20150346748A1
公开(公告)日：2015-12-03
申请号：US14287395
申请日：2014-05-27
IPC分类号： G05F1/575
摘要： A semiconductor device including a voltage regulator is disclosed. The voltage regulator may include a multipath amplifier stage, a driver stage coupled to the multipath amplifier stage, a dynamic compensation circuit coupled to the multipath amplifier stage, and a current compensation circuit. The dynamic compensation circuit may be operable to provide a varying level of compensation to the multipath amplifier stage, where the varying level of compensation proportional to a current level associated with the load; and the current compensation circuit may be operable to allow a minimum current level at the driver stage.
摘要翻译： 公开了一种包括电压调节器的半导体器件。 电压调节器可以包括多径放大器级，耦合到多径放大器级的驱动级，耦合到多径放大器级的动态补偿电路和电流补偿电路。 动态补偿电路可以用于向多径放大器级提供变化的补偿电平，其中与负载相关联的当前电平成正比的变化的补偿电平; 并且电流补偿电路可操作以允许在驱动级的最小电流电平。
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公开(公告)号：US08830772B2
公开(公告)日：2014-09-09
申请号：US13524555
申请日：2012-06-15
IPC分类号： G11C7/00
摘要： A sense amplifier (100) includes first and second inverters (112 and 113). The first inverter has an input terminal (116) and an OUT_B output node and a first transistor (124). The second inverter (113) has an input terminal (115) and an OUT output node and a second transistor (125). The OUT_B output node of the first inverter is coupled to an input terminal of the second inverter, and the OUT node of the second inverter is coupled to an input terminal of the first inverter. The sense amplifier does not use a reference current; therefore, the sense amplifier does not need a reference current generator. The sense amplifier needs only one enable signal to reset a latch (110) of the sense amplifier. When coupled to a non-volatile memory element, voltages at the output nodes are indicative of a logic level of a bit stored in the non-volatile memory element.
摘要翻译： 读出放大器（100）包括第一和第二反相器（112和113）。 第一反相器具有输入端（116）和OUT_B输出节点和第一晶体管（124）。 第二反相器（113）具有输入端（115）和OUT输出节点和第二晶体管（125）。 第一反相器的OUT_B输出节点耦合到第二反相器的输入端，第二反相器的OUT节点耦合到第一反相器的输入端。 读出放大器不使用参考电流; 因此，读出放大器不需要参考电流发生器。 读出放大器仅需要一个使能信号来复位读出放大器的锁存器（110）。 当耦合到非易失性存储器元件时，输出节点处的电压指示存储在非易失性存储器元件中的位的逻辑电平。
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公开(公告)号：US08362814B2
公开(公告)日：2013-01-29
申请号：US13553095
申请日：2012-07-19
IPC分类号： H03L7/00
CPC分类号： G01R19/16552 , G01R19/16519 , G06F11/3024 , G06F11/3062 , G06F11/3093 , G11C11/417
摘要： A data processing system includes a brown-out detection circuit with a first resistive element, a first transistor, a second transistor, and a comparator. The first resistive element has a first terminal coupled to a first power supply voltage terminal, and a second terminal. The first transistor has a first current electrode coupled to the second terminal of the first resistive element, a control electrode, and a second current electrode. The second transistor has a first current electrode coupled to the second current electrode of the first transistor, a control electrode, and a second current electrode coupled to a second power supply voltage terminal. The comparator has a first input terminal coupled to the first terminal of the first resistive element, a second input terminal coupled to the second terminal of the first resistive element, and an output terminal for providing a brown-out detection signal.
摘要翻译： 数据处理系统包括具有第一电阻元件的欠压检测电路，第一晶体管，第二晶体管和比较器。 第一电阻元件具有耦合到第一电源电压端子的第一端子和第二端子。 第一晶体管具有耦合到第一电阻元件的第二端子的第一电流电极，控制电极和第二电流电极。 第二晶体管具有耦合到第一晶体管的第二电流电极的第一电流电极，耦合到第二电源电压端子的控制电极和第二电流电极。 比较器具有耦合到第一电阻元件的第一端子的第一输入端子，耦合到第一电阻元件的第二端子的第二输入端子和用于提供欠压检测信号的输出端子。
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公开(公告)号：US08330526B2
公开(公告)日：2012-12-11
申请号：US12836997
申请日：2010-07-15
CPC分类号： G06F1/28 , G01R19/16552
摘要： A low voltage detector (100) includes a voltage and current reference circuit (102); a power supply voltage monitor circuit (104), coupled to the voltage and current reference circuit and to a power supply; and a voltage comparator (106), coupled to the voltage and current reference circuit and to the power supply voltage monitor circuit. The voltage and current reference circuit includes a self-cascode MOSFET structure (SCM) (110) that produces a reference voltage. The power supply voltage monitoring circuit includes another SCM (140) that produces a monitor voltage, related to the power supply voltage. The reference voltage and the monitor voltage have a same behavior with changes in temperature, thereby allowing the trip point of the low voltage detector to minimally vary with temperature. The low voltage detector is disposed on an integrated circuit (101), and the transistors of the low voltage detector consist of only CMOS transistors.
摘要翻译： 低电压检测器（100）包括电压和电流参考电路（102）; 电源电压监视电路（104），耦合到电压和电流参考电路和电源; 以及耦合到电压和电流参考电路和电源电压监视电路的电压比较器（106）。 电压和电流参考电路包括产生参考电压的自共源共栅MOSFET结构（SCM）（110）。 电源电压监视电路包括产生与电源电压相关的监视电压的另一SCM（140）。 参考电压和监视电压与温度变化具有相同的行为，从而允许低电压检测器的跳变点最小化随温度变化。 低电压检测器设置在集成电路（101）上，低电压检测器的晶体管仅由CMOS晶体管构成。
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公开(公告)号：US20120013365A1
公开(公告)日：2012-01-19
申请号：US12836997
申请日：2010-07-15
IPC分类号： H03K5/153
CPC分类号： G06F1/28 , G01R19/16552
摘要： A low voltage detector (100) includes a voltage and current reference circuit (102); a power supply voltage monitor circuit (104), coupled to the voltage and current reference circuit and to a power supply; and a voltage comparator (106), coupled to the voltage and current reference circuit and to the power supply voltage monitor circuit. The voltage and current reference circuit includes a self-cascode MOSFET structure (SCM) (110) that produces a reference voltage. The power supply voltage monitoring circuit includes another SCM (140) that produces a monitor voltage, related to the power supply voltage. The reference voltage and the monitor voltage have a same behavior with changes in temperature, thereby allowing the trip point of the low voltage detector to minimally vary with temperature. The low voltage detector is disposed on an integrated circuit (101), and the transistors of the low voltage detector consist of only CMOS transistors.
摘要翻译： 低电压检测器（100）包括电压和电流参考电路（102）; 电源电压监视电路（104），耦合到电压和电流参考电路和电源; 以及耦合到电压和电流参考电路和电源电压监视电路的电压比较器（106）。 电压和电流参考电路包括产生参考电压的自共源共栅MOSFET结构（SCM）（110）。 电源电压监视电路包括产生与电源电压相关的监视电压的另一SCM（140）。 参考电压和监视电压与温度变化具有相同的行为，从而允许低电压检测器的跳变点最小化随温度变化。 低电压检测器设置在集成电路（101）上，低电压检测器的晶体管仅由CMOS晶体管构成。
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19.发明授权Programmable voltage reference with a voltage reference circuit having a self-cascode metal-oxide semiconductor field-effect transistor structure 有权具有电压参考电路的可编程参考电压，具有自共存状态金属氧化物半导体场效应晶体管结构公开(公告)号：US08093880B2
公开(公告)日：2012-01-10
申请号：US12277695
申请日：2008-11-25
IPC分类号： G05F3/08
CPC分类号： G05F3/16
摘要： A programmable voltage reference includes a temperature compensated current source and a voltage reference circuit. The temperature compensated current source includes an output configured to provide a reference current. The voltage reference circuit includes an input coupled to the output of the temperature compensated current source and a reference output. The voltage reference circuit includes a self-cascode metal-oxide semiconductor field-effect transistor structure that includes a first device that is diode-connected and operates in a weak inversion saturation region and a second device that operates in a weak inversion triode region. A length of the second device is selectable. The voltage reference circuit is configured to provide a reference voltage on the reference output based on the reference current.
摘要翻译： 可编程电压基准包括温度补偿电流源和电压参考电路。 温度补偿电流源包括被配置为提供参考电流的输出。 电压参考电路包括耦合到温度补偿电流源的输出和参考输出的输入。 电压参考电路包括自共成共栅型金属氧化物半导体场效应晶体管结构，其包括二极管连接并在弱反相饱和区工作的第一器件和在弱反相三极管区工作的第二器件。 第二装置的长度是可选择的。 电压参考电路被配置为基于参考电流在参考输出上提供参考电压。
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公开(公告)号：US20110121809A1
公开(公告)日：2011-05-26
申请号：US12626321
申请日：2009-11-25
IPC分类号： G05F3/16
CPC分类号： G05F3/262
摘要： A bandgap voltage reference unit on an integrated circuit (101) includes a proportional-to-absolute-temperature (PTAT) current source (100) coupled to a bandgap voltage reference circuit (200) that includes a plurality of self-cascode MOSFET structures (201-204) that are cascaded together to form a PTAT voltage generator (205). The bandgap voltage reference circuit also includes a complementary-to-absolute-temperature (CTAT) device (260). A PTAT voltage from the PTAT voltage generator is added to a CTAT voltage from the CTAT device to produce an output voltage of the bandgap voltage reference unit, such that the output voltage is the bandgap voltage of the integrated circuit and such that the output voltage does not change with temperature.
摘要翻译： 集成电路（101）上的带隙电压参考单元包括耦合到带隙电压参考电路（200）的比例绝对温度（PTAT）电流源（100），该带隙电压参考电路包括多个自共源共栅MOSFET结构 201-204），其级联在一起以形成PTAT电压发生器（205）。 带隙电压参考电路还包括互补绝对温度（CTAT）装置（260）。 来自PTAT电压发生器的PTAT电压被加到来自CTAT装置的CTAT电压，以产生带隙电压参考单元的输出电压，使得输出电压是集成电路的带隙电压，并且使得输出电压 不随温度变化。
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