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公开(公告)号：US20130290603A1
公开(公告)日：2013-10-31
申请号：US13457669
申请日：2012-04-27
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F2212/1024 , G06F2212/151 , G06F2212/7202 , G06F2212/7203 , G06F2212/7204
摘要： A method of transferring data from a non-volatile memory (NVM) having a plurality of blocks of an emulated electrically erasable (EEE) memory to a random access memory (RAM) of the EEE includes accessing a plurality of records, a record from each block. A determination is made if any of the data signals of the first data signals are valid and thereby considered valid data signals. If there is only one or none that are valid, the valid data, if any is loaded into RAM and the process continues with subsequent simultaneous accesses. If more than one is valid, then the processes is halted until the RAM is loaded with the valid data, then the method continues with subsequent simultaneous accesses of records.
摘要翻译： 将具有多个模拟电可擦除（EEE）存储器块的非易失性存储器（NVM）的数据传送到EEE的随机存取存储器（RAM）的方法包括访问多个记录，每个记录 块。 如果第一数据信号的数据信号中的任一个是有效的并因此被认为是有效数据信号，则确定。 如果只有一个或者没有一个有效，则有效数据（如果有的话）被加载到RAM中，并且该进程继续进行后续的同时访问。 如果多于一个有效，那么进程停止，直到RAM被加载有效数据，然后该方法继续随后记录的同时访问。
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公开(公告)号：US08250319B2
公开(公告)日：2012-08-21
申请号：US12569025
申请日：2009-09-29
IPC分类号： G06F12/12
CPC分类号： G06F12/0246 , G06F2212/7203 , G06F2212/7205
摘要： An emulated electrically erasable memory system includes a random access memory (RAM) and a non-volatile memory (NVM). A write access to the RAM is received which provides first write data and a first address, where the first write data is stored in the RAM at the first address, and a currently filling sector of the NVM is updated to store both the first write data and the first address as a first record. In response to the write access, based on whether there are any remaining active records in an oldest filled sector of the NVM, a portion of an erase process or a transfer of up to a predetermined number of active records from the oldest filled sector to the currently filling sector is performed. The predetermined number of active records is less than a maximum number of total records that may be stored within the oldest filled sector.
摘要翻译： 模拟电可擦除存储器系统包括随机存取存储器（RAM）和非易失性存储器（NVM）。 接收对RAM的写访问，其提供第一写数据和第一地址，其中第一写数据存储在RAM中的第一地址处，并且NVM的当前填充扇区被更新以存储第一写数据 第一个地址作为第一个记录。 响应于写入访问，基于在NVM的最旧的填充扇区中是否存在任何剩余的活动记录，擦除处理的一部分或从最旧的填充扇区到达预定数量的活动记录的转移 目前正在填补部门。 预定数量的活动记录小于可以存储在最旧的填充扇区内的总记录的最大数量。
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公开(公告)号：US20110173373A1
公开(公告)日：2011-07-14
申请号：US12685856
申请日：2010-01-12
CPC分类号： G06F12/0246 , G06F11/1441 , G06F2212/7207 , G11C16/16
摘要： A method of storing information at a non-volatile memory includes storing a first status bit at a sector header of the memory prior to erasing a sector at the memory. A second status bit is stored after erasing of the sector. Because the erasure of the sector is interleaved with the storage of the status bits, a brownout or other corrupting event during erasure of the record will likely result in a failure to store the second status bit. Therefore, the first and second status bits can be compared to determine if the data was properly erased at the non-volatile memory. Further, multiple status bits can be employed to indicate the status of other memory sectors, so that a difference in the status bits for a particular sector can indicate a brownout or other corrupting event.
摘要翻译： 在非易失性存储器处存储信息的方法包括在擦除存储器上的扇区之前将第一状态位存储在存储器的扇区头部。 擦除扇区后存储第二个状态位。 由于扇区的擦除与状态位的存储交错，所以在擦除记录期间的掉电或其他破坏事件可能导致存储第二状态位的故障。 因此，可以比较第一和第二状态位以确定数据是否在非易失性存储器处被正确擦除。 此外，可以采用多个状态位来指示其他存储器扇区的状态，使得特定扇区的状态位的差异可以指示掉电或其他破坏事件。
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公开(公告)号：US20110107009A1
公开(公告)日：2011-05-05
申请号：US12608541
申请日：2009-10-29
CPC分类号： G06F11/08
摘要： A method of storing information at a non-volatile memory includes storing a status bit prior to storing data at the memory. A second status bit is stored after storing of the data. Because the storage of data is interleaved with the storage of the status bits, a brownout or other corrupting event during storage of the data will likely result in a failure to store the second status bit. Therefore, the first and second status bits can be compared to determine if the data was properly stored at the non-volatile memory.
摘要翻译： 在非易失性存储器处存储信息的方法包括在将数据存储在存储器之前存储状态位。 存储数据后存储第二个状态位。 由于数据的存储与状态位的存储交错，因此在存储数据期间的掉电或其他损坏的事件可能导致存储第二状态位的故障。 因此，可以比较第一和第二状态位以确定数据是否被适当地存储在非易失性存储器中。
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公开(公告)号：US20110078362A1
公开(公告)日：2011-03-31
申请号：US12569025
申请日：2009-09-29
CPC分类号： G06F12/0246 , G06F2212/7203 , G06F2212/7205
摘要： An emulated electrically erasable memory system includes a random access memory (RAM) and a non-volatile memory (NVM). A write access to the RAM is received which provides first write data and a first address, where the first write data is stored in the RAM at the first address, and a currently filling sector of the NVM is updated to store both the first write data and the first address as a first record. In response to the write access, based on whether there are any remaining active records in an oldest filled sector of the NVM, a portion of an erase process or a transfer of up to a predetermined number of active records from the oldest filled sector to the currently filling sector is performed. The predetermined number of active records is less than a maximum number of total records that may be stored within the oldest filled sector.
摘要翻译： 模拟电可擦除存储器系统包括随机存取存储器（RAM）和非易失性存储器（NVM）。 接收对RAM的写访问，其提供第一写数据和第一地址，其中第一写数据存储在RAM中的第一地址处，并且NVM的当前填充扇区被更新以存储第一写数据 第一个地址作为第一个记录。 响应于写入访问，基于在NVM的最旧的填充扇区中是否存在任何剩余的活动记录，擦除处理的一部分或从最旧的填充扇区到达预定数量的活动记录的转移 目前正在填补部门。 预定数量的活动记录小于可以存储在最旧的填充扇区内的总记录的最大数量。
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