公开(公告)号：US20070037405A1

公开(公告)日：2007-02-15

申请号：US11413282

申请日：2006-04-28

申请人： Jong-Chae Kim ,  Duk-Min Yi ,  Sang-Il Jung ,  Jong-Wook Hong

发明人： Jong-Chae Kim ,  Duk-Min Yi ,  Sang-Il Jung ,  Jong-Wook Hong

IPC分类号： H01L21/31

CPC分类号： H01L28/40 ,  H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.

摘要翻译： 形成MIM电容器的电介质层的方法可以包括在MIM电容器的电介质层上形成钝化层，以将介电层与上覆的光刻胶图案直接接触。 还公开了相关的电容器结构。

公开(公告)号：US08067301B2

公开(公告)日：2011-11-29

申请号：US12692133

申请日：2010-01-22

申请人： Duk-Min Yi ,  Sung-Keun Won ,  Jun-Yeoul You

发明人： Duk-Min Yi ,  Sung-Keun Won ,  Jun-Yeoul You

IPC分类号： H01L21/00

CPC分类号： H01L27/14687 ,  H01L27/14609 ,  H01L27/14689

摘要： A reliable image sensor and a method for forming the same are provided. The image sensor includes a photo-detective device. At least one transistor is electrically connected to the photo-detective device for outputting charges stored in the photo-detective device. A transistor directly connected to the photo-detective device includes a gate electrode pattern and an ion-implantation interrupting pattern arranged on the gate electrode pattern. Since the ion-implantation interrupting pattern is located on an upper portion of the gate electrode pattern of the transistor in the vicinity of the photo-detective device, a threshold voltage of the gate electrode pattern of the transistor in the vicinity of the photo-detective device is adjusted to a desired value.

摘要翻译： 提供了可靠的图像传感器及其形成方法。 图像传感器包括光检测装置。 至少一个晶体管电连接到光检测器件，用于输出存储在光检测器件中的电荷。 直接连接到光检测器件的晶体管包括布置在栅极电极图案上的栅电极图案和离子注入中断图案。 由于离子注入断线图案位于光检测装置附近的晶体管的栅电极图案的上部，所以在光检测附近的晶体管的栅电极图案的阈值电压 设备被调整到所需的值。

公开(公告)号：US20080081396A1

公开(公告)日：2008-04-03

申请号：US11882155

申请日：2007-07-31

申请人： Jong-Wook Hong ,  Tae-Seok Oh ,  Duk-Min Yi ,  Young-Mook Oh ,  Won-Je Park

发明人： Jong-Wook Hong ,  Tae-Seok Oh ,  Duk-Min Yi ,  Young-Mook Oh ,  Won-Je Park

IPC分类号： H01L21/00

CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14687

摘要： A method of fabricating an image sensor according to example embodiments may include forming a photodiode in a photoelectric conversion region of a substrate and forming an etch stop layer on the substrate. The etch stop layer may be patterned to form an inner lens on the photoelectric conversion region and an etch stop layer pattern on a transistor region of the substrate. A metal interconnection structure may be formed on the inner lens and the etch stop layer pattern. Accordingly, the number of additional processes for fabricating an image sensor may be reduced.

摘要翻译： 根据示例性实施例的制造图像传感器的方法可以包括在衬底的光电转换区域中形成光电二极管，并在衬底上形成蚀刻停止层。 蚀刻停止层可以被图案化以在光电转换区域上形成内透镜，并且在衬底的晶体管区域上形成蚀刻停止层图案。 可以在内透镜和蚀刻停止层图案上形成金属互连结构。 因此，可以减少用于制造图像传感器的附加处理的数量。

公开(公告)号：US20070262366A1

公开(公告)日：2007-11-15

申请号：US11782085

申请日：2007-07-24

申请人： Hyoun-Min Baek ,  Duk-Min Yi

发明人： Hyoun-Min Baek ,  Duk-Min Yi

IPC分类号： H01L31/113

CPC分类号： H01L27/14627 ,  H01L27/14685

摘要： Disclosed are a complementary metal oxide semiconductor (CMOS) image sensor and a method of forming the same. The CMOS image sensor comprises a semiconductor substrate having a photodiode region and a transistor region. An optical path is formed between a micro lens on the photodiode region and a photodiode formed on the semiconductor substrate. The optical path comprises an inner lens formed between an intermetal insulation layer on the photodiode region and a transparent optical region formed on the inner lens. The transparent optical region generally has a different refractive index from the inner lens.

摘要翻译： 公开了互补金属氧化物半导体（CMOS）图像传感器及其形成方法。 CMOS图像传感器包括具有光电二极管区域和晶体管区域的半导体衬底。 在光电二极管区域上的微透镜和形成在半导体衬底上的光电二极管之间形成光路。 光路包括形成在光电二极管区域上的金属间绝缘层和形成在内透镜上的透明光学区域之间的内透镜。 透明光学区域通常具有与内部透镜不同的折射率。

公开(公告)号：US07262073B2

公开(公告)日：2007-08-28

申请号：US11207759

申请日：2005-08-22

申请人： Hyoun-Min Baek ,  Duk-Min Yi

发明人： Hyoun-Min Baek ,  Duk-Min Yi

IPC分类号： H01L21/00

CPC分类号： H01L27/14627 ,  H01L27/14685

摘要： Disclosed are a complementary metal oxide semiconductor (CMOS) image sensor and a method of forming the same. The CMOS image sensor comprises a semiconductor substrate having a photodiode region and a transistor region. An optical path is formed between a micro lens on the photodiode region and a photodiode formed on the semiconductor substrate. The optical path comprises an inner lens formed between an intermetal insulation layer on the photodiode region and a transparent optical region formed on the inner lens. The transparent optical region generally has a different refractive index from the inner lens.

摘要翻译： 公开了互补金属氧化物半导体（CMOS）图像传感器及其形成方法。 CMOS图像传感器包括具有光电二极管区域和晶体管区域的半导体衬底。 在光电二极管区域上的微透镜和形成在半导体基板上的光电二极管之间形成光路。 光路包括形成在光电二极管区域上的金属间绝缘层和形成在内透镜上的透明光学区域之间的内透镜。 透明光学区域通常具有与内部透镜不同的折射率。

公开(公告)号：US20070075337A1

公开(公告)日：2007-04-05

申请号：US11528409

申请日：2006-09-28

申请人： Sang-Il Jung ,  Duk-Min Yi

发明人： Sang-Il Jung ,  Duk-Min Yi

IPC分类号： H01L29/768

CPC分类号： H01L27/14689 ,  H01L27/14603

摘要： Example embodiments relate to an image sensor and a fabrication method thereof. An image sensor may include a semiconductor substrate. A charge transfer structure may be formed on the semiconductor substrate. The charge transfer structure may include a gate insulating film that may be formed on a channel region in the semiconductor substrate between a photoelectric conversion region and charge detection region, and a transfer gate electrode that may be formed on the gate insulating film that may have a region doped with a first conductivity type impurity-doped region and a second conductivity type impurity-doped region which may be adjacent to each other.

摘要翻译： 示例性实施例涉及图像传感器及其制造方法。 图像传感器可以包括半导体衬底。 电荷转移结构可以形成在半导体衬底上。 电荷转移结构可以包括可以形成在半导体衬底中的光电转换区域和电荷检测区域之间的沟道区域上的栅极绝缘膜，以及可以形成在栅极绝缘膜上的传输栅极电极，该栅极绝缘膜可以具有 掺杂有可以彼此相邻的第一导电类型杂质掺杂区域和第二导电类型杂质掺杂区域的区域。

公开(公告)号：US07078775B2

公开(公告)日：2006-07-18

申请号：US10797604

申请日：2004-03-11

申请人： Duk-min Yi ,  Han-su Oh ,  Chul-ho Chung

发明人： Duk-min Yi ,  Han-su Oh ,  Chul-ho Chung

IPC分类号： H01L29/94

CPC分类号： H01L29/4238 ,  H01L23/4824 ,  H01L29/41758 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： A mesh-shaped gate electrode is located over a surface of a substrate. The mesh-shaped gate electrode includes a plurality of first elongate wirings extending parallel to one another, and a plurality of second elongate wirings extending parallel to one another. The first elongate wirings intersect the second elongate wirings to define an array of gate intersection regions over the surface of the substrate and to further define an array of source/drain regions of the substrate. To reduce gate capacitance, at least one oxide region may be located in the substrate below the mesh-shaped gate electrode. For example, an array of oxide regions may be respectively located below the array of gate intersection regions.

摘要翻译： 网状栅极位于基板的表面上方。 网状栅电极包括彼此平行延伸的多个第一细长布线以及彼此平行延伸的多个第二细长布线。 第一细长布线与第二细长布线相交以限定衬底表面上的栅极交叉区域阵列，并进一步限定衬底的源/漏区阵列。 为了减小栅极电容，至少一个氧化物区域可以位于网状栅电极下面的衬底中。 例如，氧化物区域的阵列可以分别位于栅极交叉区域阵列的下方。

公开(公告)号：US20060108614A1

公开(公告)日：2006-05-25

申请号：US11284883

申请日：2005-11-23

申请人： Duk-Min Yi ,  Jong-Chae Kim ,  Jin-Hyeong Park

发明人： Duk-Min Yi ,  Jong-Chae Kim ,  Jin-Hyeong Park

IPC分类号： H01L29/768

CPC分类号： H04N5/357 ,  H01L27/14609

摘要： A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.

摘要翻译： 互补金属氧化物半导体（CMOS）图像传感器包括响应于其上的入射光而产生电荷的光电二极管区域。 CMOS图像传感器还包括第一浮动扩散层，其适于响应于全局转移信号从光电二极管区域接收电荷，以及第二浮动扩散区域，其适于响应于第一浮动扩散区域接收来自第一浮动扩散区域的电荷 像素选择信号。

公开(公告)号：US20060057760A1

公开(公告)日：2006-03-16

申请号：US11217962

申请日：2005-09-01

申请人： Duk-Min Yi ,  Sung-Keun Won ,  Jun-Yeoul You

发明人： Duk-Min Yi ,  Sung-Keun Won ,  Jun-Yeoul You

IPC分类号： H01L21/00

CPC分类号： H01L27/14687 ,  H01L27/14609 ,  H01L27/14689

摘要： A reliable image sensor and a method for forming the same are provided. The image sensor includes a photo-detective device. At least one transistor is electrically connected to the photo-detective device for outputting charges stored in the photo-detective device. A transistor directly connected to the photo-detective device includes a gate electrode pattern and an ion-implantation interrupting pattern arranged on the gate electrode pattern. Since the ion-implantation interrupting pattern is located on an upper portion of the gate electrode pattern of the transistor in the vicinity of the photo-detective device, a threshold voltage of the gate electrode pattern of the transistor in the vicinity of the photo-detective device is adjusted to a desired value.

摘要翻译： 提供了可靠的图像传感器及其形成方法。 图像传感器包括光检测装置。 至少一个晶体管电连接到光检测器件，用于输出存储在光检测器件中的电荷。 直接连接到光检测器件的晶体管包括布置在栅极电极图案上的栅电极图案和离子注入中断图案。 由于离子注入断线图案位于光检测装置附近的晶体管的栅电极图案的上部，所以在光检测附近的晶体管的栅电极图案的阈值电压 设备被调整到所需的值。

公开(公告)号：US08017490B2

公开(公告)日：2011-09-13

申请号：US12784104

申请日：2010-05-20

申请人： Jong-Chae Kim ,  Duk-Min Yi ,  Sang-Il Jung ,  Jong-Wook Hong

发明人： Jong-Chae Kim ,  Duk-Min Yi ,  Sang-Il Jung ,  Jong-Wook Hong

IPC分类号： H01L21/20

CPC分类号： H01L28/40 ,  H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.

摘要翻译： 形成MIM电容器的电介质层的方法可以包括在MIM电容器的电介质层上形成钝化层，以将介电层与上覆的光刻胶图案直接接触。 还公开了相关的电容器结构。