专利检索 ap:"Hans Van Meer" 第 2 页

11.

发明申请
METHOD FOR FORMING SEMICONDUCTOR DEVICES WITH ACTIVE SILICON HEIGHT VARIATION 有权
标题翻译：用于形成具有活性硅高度变化的半导体器件的方法

公开(公告)号：US20110272791A1

公开(公告)日：2011-11-10

申请号：US13184050

申请日：2011-07-15

申请人： David E. Brown , Hans Van Meer , Sey-Ping Sun

发明人： David E. Brown , Hans Van Meer , Sey-Ping Sun

IPC分类号： H01L27/06 , H01L21/20

CPC分类号： H01L29/0684 , H01L21/84 , H01L27/1203

摘要： A method far farming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.

摘要翻译： 在同一硅层上种植不同有源厚度的方法包括掩蔽硅层并暴露硅层的选定区域。通过在曝光区域从层中添加硅或从中减去硅来改变暴露区域处的硅层的厚度。一旦去除掩模，硅层就具有不同有源厚度的区域，分别适用于不同类型的器件，例如二极管和晶体管。

12.

发明授权
Technique for forming a transistor having raised drain and source regions with a tri-layer hard mask for gate patterning 有权
标题翻译：用于形成具有用于栅极图案化的三层硬掩模的具有升高的漏极和源极区域的晶体管的技术

公开(公告)号：US07279389B2

公开(公告)日：2007-10-09

申请号：US11280484

申请日：2005-11-16

申请人： Karla Romero , Thorsten Kammler , Scott Luning , Hans Van Meer

发明人： Karla Romero , Thorsten Kammler , Scott Luning , Hans Van Meer

IPC分类号： H01L21/336

CPC分类号： H01L21/32139 , H01L21/823814 , H01L29/6656 , H01L29/66628 , H01L29/7834

摘要： By providing a hard mask layer stack including at least three different layers for patterning a gate electrode structure, constraints demanded by sophisticated lithography, as well as cap layer integrity, in a subsequent selective epitaxial growth process may be accomplished, thereby providing the potential for further device scaling of transistor devices requiring raised drain and source regions.

摘要翻译： 通过提供包括用于图案化栅电极结构的至少三个不同层的硬掩模层堆叠，可以实现随后的选择性外延生长工艺中复杂光刻所需的约束以及覆盖层完整性，从而提供进一步的潜力晶体管器件的器件缩放需要高的漏极和源极区域。