公开(公告)号：US06670278B2

公开(公告)日：2003-12-30

申请号：US09820726

申请日：2001-03-30

申请人： Si Yi Li ,  Helen H. Zhu ,  S. M. Reza Sadjadi ,  David R. Pirkle ,  James Bowers ,  Michael Goss

发明人： Si Yi Li ,  Helen H. Zhu ,  S. M. Reza Sadjadi ,  David R. Pirkle ,  James Bowers ,  Michael Goss

IPC分类号： H01L21302

CPC分类号： H01L21/7681 ,  H01L21/31116 ,  H01L21/76807

摘要： The invention provides a process for plasma etching silicon carbide with selectivity to an overlapping and/or underlying dielectric layer of material. The etching gas includes a hydrogen-containing fluorocarbon gas such as CH3F, an oxygen-containing gas such as O2 and an optional carrier gas such as Ar. The dielectric material can comprise silicon dioxide, silicon nitride, silicon oxynitride or various low-k dielectric materials including organic low-k materials. In order to achieve a desired selectivity to such dielectric materials, the plasma etch gas chemistry is selected to achieve a desired etch rate of the silicon carbide while etching the dielectric material at a slower rate. The process can be used to selectively etch a hydrogenated silicon carbide etch stop layer or silicon carbide substrates.