公开(公告)号：US11306391B2

公开(公告)日：2022-04-19

申请号：US17124749

申请日：2020-12-17

Applicant: IonQuest Corp.

Inventor： Bassam Hanna Abraham ,  Roman Chistyakov

IPC: C23C14/34 ,  C23C14/35 ,  C23C16/505 ,  H01J37/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01J37/32 ,  C23C14/00 ,  C23C14/06 ,  C23C14/14

Abstract: A magnetically enhanced low temperature high density plasma chemical vapor deposition (LT-HDP-CVD) source has a hollow cathode target and an anode, which form a gap. A cathode target magnet assembly forms magnetic field lines substantially perpendicular to the cathode surface. A gap magnet assembly forms a magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross the pole piece electrode positioned in the gap. The pole piece is isolated from ground and can be connected to a voltage power supply. The pole piece can have negative, positive, floating, or RF electrical potentials. By controlling the duration, value, and sign of the electric potential on the pole piece, plasma ionization can be controlled. Feed gas flows through the gap between the hollow cathode and anode. The cathode can be connected to a pulse power or RF power supply, or cathode can be connected to both power supplies. The cathode target and substrate can be inductively grounded.

公开(公告)号：US20200176234A1

公开(公告)日：2020-06-04

申请号：US16025928

申请日：2017-08-24

Applicant: IonQuest Corp.

Inventor： Bassam Hanna Abraham ,  Roman Chistyakov

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/34

Abstract: A method of sputtering using a high energy density plasma (HEDP) magnetron includes configuring an anode and cathode target magnet assembly in a vacuum chamber with a sputtering cathode target and substrate, applying regulated unipolar voltage pulses to a tunable pulse forming network, and adjusting amplitude and frequency of the unipolar voltage pulses to cause a resonance mode associated with the tunable pulse forming network and an output AC waveform generated from the pulse forming network. The output AC waveform is operatively coupled to the sputtering cathode target, and the output AC waveform includes a negative voltage exceeding the amplitude of the unipolar voltage pulses during sputtering discharge of the HEDP magnetron. An increase in the amplitude of the unipolar voltage pulses causes a constant amplitude of the negative voltage of the output AC waveform in response to the pulse forming network being in the resonance mode, thereby causing the HEDP magnetron sputtering discharge to form the layer on the substrate. A corresponding apparatus and computer-readable medium are disclosed.

公开(公告)号：US12217949B2

公开(公告)日：2025-02-04

申请号：US17495730

申请日：2021-10-06

Applicant: IonQuest Corp.

Inventor： Bassam Hanna Abraham

IPC: H01J37/34 ,  C23C14/14 ,  C23C14/34 ,  C23C14/35

Abstract: A method of sputtering a layer on a substrate includes positioning an HEDP magnetron in a vacuum with an anode, cathode target, magnet assembly, substrate, and feed gas; applying a plurality of unipolar negative direct current (DC) voltage pulses from a pulse power supply to a pulse converting network (PCN), wherein the PCN comprises at least one inductor and at least one capacitor; and adjusting an amplitude, pulse duration, and frequency associated with the plurality of unipolar negative DC voltage pulses and adjusting a value of at least one of the at least one inductor and the at least one capacitor, thereby causing a resonance mode associated with the PCN. The substrate is operatively coupled to ground by a first diode, thereby attracting positively charged ions sputtered from the cathode target and plasma to the substrate. A corresponding apparatus and computer-readable medium are also disclosed.

公开(公告)号：US11359274B2

公开(公告)日：2022-06-14

申请号：US16284327

申请日：2019-02-25

Applicant: IonQuest Corp.

Inventor： Bassam Hanna Abraham ,  Roman Chistyakov

IPC: C23C14/35 ,  C23C14/34 ,  H01J37/34 ,  H01L21/285

Abstract: A method of depositing a layer on a substrate includes applying a first magnetic field to a cathode target, electrically coupling the cathode target to a first high power pulse resonance alternating current (AC) power supply, positioning an additional cylindrical cathode target electrode around the cathode, applying a second magnetic field to the additional cylindrical cathode target electrode, electrically coupling the additional cylindrical cathode target electrode to a second high power pulse resonance AC power supply, generating magnetic coupling between the cathode target and an anode, providing a feed gas, and selecting a time shift between negative voltage peaks associated with AC voltage waveforms generated by the first high power pulse resonance AC power supply and the second high power pulse resonance AC power supply. An apparatus includes a vacuum chamber, cathode target magnet assembly, first high power pulse resonance AC power supply, additional electrode, additional electrode magnet assembly, second high power pulse resonance AC power supply, and feed gas.

公开(公告)号：US10900118B2

公开(公告)日：2021-01-26

申请号：US16261516

申请日：2019-01-29

Applicant: IonQuest Corp.

Inventor： Bassam Hanna Abraham ,  Roman Chistyakov

IPC: C23C14/35 ,  C23C14/34 ,  H01J37/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01J37/32 ,  C23C14/00 ,  C23C14/06 ,  C23C14/14

Abstract: A magnetically enhanced low temperature high density plasma chemical vapor deposition (LT-HDP-CVD) source has a hollow cathode target and an anode, which form a gap. A cathode target magnet assembly forms magnetic field lines substantially perpendicular to the cathode surface. A gap magnet assembly forms a magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross the pole piece electrode positioned in the gap. The pole piece is isolated from ground and can be connected to a voltage power supply. The pole piece can have negative, positive, floating, or RF electrical potentials. By controlling the duration, value, and sign of the electric potential on the pole piece, plasma ionization can be controlled. Feed gas flows through the gap between the hollow cathode and anode. The cathode can be connected to a pulse power or RF power supply, or cathode can be connected to both power supplies. The cathode target and substrate can be inductively grounded.

公开(公告)号：US20190316249A1

公开(公告)日：2019-10-17

申请号：US16284327

申请日：2019-02-25

Applicant: IonQuest Corp.

Inventor： Bassam Hanna ABRAHAM ,  Roman CHISTYAKOV

IPC: C23C14/35 ,  H01L21/285 ,  C23C14/34 ,  H01J37/34

Abstract: A method of depositing a layer on a substrate includes applying a first magnetic field to a cathode target, electrically coupling the cathode target to a first high power pulse resonance alternating current (AC) power supply, positioning an additional cylindrical cathode target electrode around the cathode, applying a second magnetic field to the additional cylindrical cathode target electrode, electrically coupling the additional cylindrical cathode target electrode to a second high power pulse resonance AC power supply, generating magnetic coupling between the cathode target and an anode, providing a feed gas, and selecting a time shift between negative voltage peaks associated with AC voltage waveforms generated by the first high power pulse resonance AC power supply and the second high power pulse resonance AC power supply. An apparatus includes a vacuum chamber, cathode target magnet assembly, first high power pulse resonance AC power supply, additional electrode, additional electrode magnet assembly, second high power pulse resonance AC power supply, and feed gas.

公开(公告)号：US20210317569A1

公开(公告)日：2021-10-14

申请号：US17352168

申请日：2021-06-18

Applicant: IonQuest Corp.

Inventor： Bassam Hanna Abraham

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01J37/32 ,  C23C14/00 ,  C23C14/06 ,  C23C14/14

Abstract: A method of sputtering a layer on a substrate using a high-energy density plasma (HEDP) magnetron includes positioning the magnetron in a vacuum with an anode, cathode target, magnet assembly, substrate, and feed gas; applying unipolar negative direct current (DC) voltage pulses from a pulse power supply with a pulse forming network (PFN) to a pulse converting network (PCN); and adjusting an amplitude and frequency associated with the plurality of unipolar negative DC voltage pulses causing a resonance mode associated with the PCN. The PCN converts the unipolar negative DC voltage pulses to an asymmetric alternating current (AC) signal that generates a high-density plasma discharge on the HEDP magnetron. An increase in amplitude or pulse duration of the plurality of unipolar negative DC voltage pulses causes an increase in the amplitude of a negative voltage of the asymmetric AC signal in response to the PCN being in the resonance mode, thereby causing sputtering discharge associated with the HEDP magnetron to form the layer from the cathode target on the substrate. A corresponding apparatus and computer-readable medium are disclosed.

公开(公告)号：US20210102284A1

公开(公告)日：2021-04-08

申请号：US17124749

申请日：2020-12-17

Applicant: IonQuest Corp.

Inventor： Bassam Hanna Abraham ,  Roman Chistyakov

IPC: C23C14/35 ,  C23C14/34 ,  H01J37/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01J37/32 ,  C23C14/00 ,  C23C14/06 ,  C23C14/14

Abstract: A magnetically enhanced low temperature high density plasma chemical vapor deposition (LT-HDP-CVD) source has a hollow cathode target and an anode, which form a gap. A cathode target magnet assembly forms magnetic field lines substantially perpendicular to the cathode surface. A gap magnet assembly forms a magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross the pole piece electrode positioned in the gap. The pole piece is isolated from ground and can be connected to a voltage power supply. The pole piece can have negative, positive, floating, or RF electrical potentials. By controlling the duration, value, and sign of the electric potential on the pole piece, plasma ionization can be controlled. Feed gas flows through the gap between the hollow cathode and anode. The cathode can be connected to a pulse power or RF power supply, or cathode can be connected to both power supplies. The cathode target and substrate can be inductively grounded.

公开(公告)号：US10913998B2

公开(公告)日：2021-02-09

申请号：US16261514

申请日：2019-01-29

Applicant: IonQuest Corp.

Inventor： Roman Chistyakov ,  Bassam Hanna Abraham

IPC: C23C14/35 ,  C23C14/34 ,  H01J37/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01J37/32 ,  C23C14/00 ,  C23C14/06 ,  C23C14/14

Abstract: A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.

公开(公告)号：US20190271070A1

公开(公告)日：2019-09-05

申请号：US16400539

申请日：2019-05-01

Applicant: IonQuest Corp.

Inventor： Bassam Hanna Abraham ,  Roman Chistyakov

IPC: C23C14/35 ,  C23C14/34 ,  C23C14/00 ,  C23C14/06 ,  C23C14/14 ,  H01J37/34 ,  H01J37/32 ,  H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L23/522

Abstract: An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) magnetron apparatus and method is provided for sputtering material from a cathode target on a substrate, and in particular, for sputtering ceramic and diamond-like coatings. The electrically and magnetically enhanced magnetron sputtering source has unbalanced magnetic fields that couple the cathode target and additional electrode together. The additional electrode is electrically isolated from ground and connected to a power supply that can generate positive, negative, or bipolar high frequency voltages, and is preferably a radio frequency (RF) power supply. RF discharge near the additional electrode increases plasma density and a degree of ionization of sputtered material atoms.