公开(公告)号：US5336903A

公开(公告)日：1994-08-09

申请号：US69030

申请日：1993-05-28

申请人： Mehmet C. Ozturk ,  Douglas T. Grider ,  Mahesh K. Sanganeria ,  Stanton P. Ashburn ,  Jimmie J. Wortman

发明人： Mehmet C. Ozturk ,  Douglas T. Grider ,  Mahesh K. Sanganeria ,  Stanton P. Ashburn ,  Jimmie J. Wortman

IPC分类号： H01L21/225 ,  H01L21/285 ,  H01L21/336 ,  H01L21/60 ,  H01L23/48

CPC分类号： H01L21/76897 ,  H01L21/2254 ,  H01L21/28518 ,  H01L29/41783 ,  H01L29/66545 ,  H01L29/66575 ,  H01L2924/0002 ,  Y10S148/058 ,  Y10S148/059

摘要： Doped silicon-germanium alloy is selectively deposited on a semiconductor substrate, and the semiconductor substrate is then heated to diffuse at least some of the dopant from the silicon-germanium alloy into the semiconductor substrate to form a doped region at the face of the semiconductor substrate. The doped silicon-germanium alloy acts as a diffusion source for the dopant, so that shallow doped, regions may be formed at the face of the semiconductor substrate without ion implantation. A high performance contact to the doped region is also provided by forming a metal layer on the doped silicon-germanium alloy layer and heating to react at least part of the silicon-germanium alloy layer with at least part of the metal layer to form a layer of germanosilicide alloy over the doped regions. The method of the present invention is particularly suitable for forming shallow source and drain regions for a field effect transistor, and self-aligned source and drain contacts therefor.

摘要翻译： 掺杂的硅 - 锗合金被选择性地沉积在半导体衬底上，然后加热半导体衬底以将至少一些掺杂剂从硅 - 锗合金扩散到半导体衬底中，以在半导体衬底的表面形成掺杂区域 。 掺杂的硅 - 锗合金充当掺杂剂的扩散源，使得可以在半导体衬底的表面处形成浅掺杂的区域而不进行离子注入。 还通过在掺杂的硅 - 锗合金层上形成金属层并加热以使至少部分硅 - 锗合金层与至少一部分金属层反应形成层，从而提供与掺杂区的高性能接触 的锗硅酸盐合金。 本发明的方法特别适用于形成用于场效应晶体管的浅源极和漏极区域，以及用于其的自对准源极和漏极接触。

公开(公告)号：US5242847A

公开(公告)日：1993-09-07

申请号：US919735

申请日：1992-07-27

申请人： Mehmet C. Ozturk ,  Douglas T. Grider ,  Mahesh K. Sanganeria ,  Stanton P. Ashburn

发明人： Mehmet C. Ozturk ,  Douglas T. Grider ,  Mahesh K. Sanganeria ,  Stanton P. Ashburn

IPC分类号： H01L21/225 ,  H01L21/285 ,  H01L21/336 ,  H01L21/60

CPC分类号： H01L21/76897 ,  H01L21/2254 ,  H01L21/28518 ,  H01L29/41783 ,  H01L29/66545 ,  H01L29/66575 ,  H01L2924/0002 ,  Y10S148/058 ,  Y10S148/059

摘要： Doped silicon-germanium alloy is selectively deposited on a semiconductor substrate, and the semiconductor substrate is then heated to diffuse at least some of the dopant from the silicon-germanium alloy into the semiconductor substrate to form a doped region at the face of the semiconductor substrate. The doped silicon-germanium alloy acts as a diffusion source for the dopant, so that shallow doped, regions may be formed at the face of the semiconductor substrate without ion implantation. A high performance contact to the doped region is also provided by forming a metal layer on the doped silicon-germanium alloy layer and heating to react at least part of the silicon-germanium alloy layer with at least part of the metal layer to form a layer of germanosilicide alloy over the doped regions. The method of the present invention is particularly suitable for forming shallow source and drain regions for a field effect transistor, and self-aligned source and drain contacts therefor.

摘要翻译： 掺杂的硅 - 锗合金被选择性地沉积在半导体衬底上，然后加热半导体衬底以将至少一些掺杂剂从硅 - 锗合金扩散到半导体衬底中，以在半导体衬底的表面形成掺杂区域 。 掺杂的硅 - 锗合金充当掺杂剂的扩散源，使得可以在半导体衬底的表面处形成浅掺杂的区域而不进行离子注入。 还通过在掺杂的硅 - 锗合金层上形成金属层并加热以使至少部分硅 - 锗合金层与至少一部分金属层反应形成层，从而提供与掺杂区的高性能接触 的锗硅酸盐合金。 本发明的方法特别适用于形成用于场效应晶体管的浅源极和漏极区域，以及用于其的自对准源极和漏极接触。