公开(公告)号：US5336903A

公开(公告)日：1994-08-09

申请号：US69030

申请日：1993-05-28

申请人： Mehmet C. Ozturk ,  Douglas T. Grider ,  Mahesh K. Sanganeria ,  Stanton P. Ashburn ,  Jimmie J. Wortman

发明人： Mehmet C. Ozturk ,  Douglas T. Grider ,  Mahesh K. Sanganeria ,  Stanton P. Ashburn ,  Jimmie J. Wortman

IPC分类号： H01L21/225 ,  H01L21/285 ,  H01L21/336 ,  H01L21/60 ,  H01L23/48

CPC分类号： H01L21/76897 ,  H01L21/2254 ,  H01L21/28518 ,  H01L29/41783 ,  H01L29/66545 ,  H01L29/66575 ,  H01L2924/0002 ,  Y10S148/058 ,  Y10S148/059

摘要： Doped silicon-germanium alloy is selectively deposited on a semiconductor substrate, and the semiconductor substrate is then heated to diffuse at least some of the dopant from the silicon-germanium alloy into the semiconductor substrate to form a doped region at the face of the semiconductor substrate. The doped silicon-germanium alloy acts as a diffusion source for the dopant, so that shallow doped, regions may be formed at the face of the semiconductor substrate without ion implantation. A high performance contact to the doped region is also provided by forming a metal layer on the doped silicon-germanium alloy layer and heating to react at least part of the silicon-germanium alloy layer with at least part of the metal layer to form a layer of germanosilicide alloy over the doped regions. The method of the present invention is particularly suitable for forming shallow source and drain regions for a field effect transistor, and self-aligned source and drain contacts therefor.

摘要翻译： 掺杂的硅 - 锗合金被选择性地沉积在半导体衬底上，然后加热半导体衬底以将至少一些掺杂剂从硅 - 锗合金扩散到半导体衬底中，以在半导体衬底的表面形成掺杂区域 。 掺杂的硅 - 锗合金充当掺杂剂的扩散源，使得可以在半导体衬底的表面处形成浅掺杂的区域而不进行离子注入。 还通过在掺杂的硅 - 锗合金层上形成金属层并加热以使至少部分硅 - 锗合金层与至少一部分金属层反应形成层，从而提供与掺杂区的高性能接触 的锗硅酸盐合金。 本发明的方法特别适用于形成用于场效应晶体管的浅源极和漏极区域，以及用于其的自对准源极和漏极接触。

公开(公告)号：US5242847A

公开(公告)日：1993-09-07

申请号：US919735

申请日：1992-07-27

申请人： Mehmet C. Ozturk ,  Douglas T. Grider ,  Mahesh K. Sanganeria ,  Stanton P. Ashburn

发明人： Mehmet C. Ozturk ,  Douglas T. Grider ,  Mahesh K. Sanganeria ,  Stanton P. Ashburn

IPC分类号： H01L21/225 ,  H01L21/285 ,  H01L21/336 ,  H01L21/60

CPC分类号： H01L21/76897 ,  H01L21/2254 ,  H01L21/28518 ,  H01L29/41783 ,  H01L29/66545 ,  H01L29/66575 ,  H01L2924/0002 ,  Y10S148/058 ,  Y10S148/059

摘要： Doped silicon-germanium alloy is selectively deposited on a semiconductor substrate, and the semiconductor substrate is then heated to diffuse at least some of the dopant from the silicon-germanium alloy into the semiconductor substrate to form a doped region at the face of the semiconductor substrate. The doped silicon-germanium alloy acts as a diffusion source for the dopant, so that shallow doped, regions may be formed at the face of the semiconductor substrate without ion implantation. A high performance contact to the doped region is also provided by forming a metal layer on the doped silicon-germanium alloy layer and heating to react at least part of the silicon-germanium alloy layer with at least part of the metal layer to form a layer of germanosilicide alloy over the doped regions. The method of the present invention is particularly suitable for forming shallow source and drain regions for a field effect transistor, and self-aligned source and drain contacts therefor.

摘要翻译： 掺杂的硅 - 锗合金被选择性地沉积在半导体衬底上，然后加热半导体衬底以将至少一些掺杂剂从硅 - 锗合金扩散到半导体衬底中，以在半导体衬底的表面形成掺杂区域 。 掺杂的硅 - 锗合金充当掺杂剂的扩散源，使得可以在半导体衬底的表面处形成浅掺杂的区域而不进行离子注入。 还通过在掺杂的硅 - 锗合金层上形成金属层并加热以使至少部分硅 - 锗合金层与至少一部分金属层反应形成层，从而提供与掺杂区的高性能接触 的锗硅酸盐合金。 本发明的方法特别适用于形成用于场效应晶体管的浅源极和漏极区域，以及用于其的自对准源极和漏极接触。

公开(公告)号：US5439850A

公开(公告)日：1995-08-08

申请号：US117870

申请日：1993-09-08

申请人： Mehmet C. Ozturk ,  Mahesh K. Sanganeria

发明人： Mehmet C. Ozturk ,  Mahesh K. Sanganeria

IPC分类号： C23C16/48 ,  H01L21/00 ,  H01L21/205 ,  H01L21/687

CPC分类号： H01L21/68735 ,  C23C16/48 ,  C23C16/481 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/67109

摘要： A ring is provided on a monocrystalline silicon wafer at one face thereof and adjacent the edge thereof. The ring increases the optical absorptivity of the wafer adjacent the ring compared to the optical absorptivity of the wafer distant from the ring. The ring therefore at least partially compensates for edge cooling of the wafer during rapid thermal processing thereof. Uniform thickness layers can therefore be deposited on a wafer in a rapid thermal processing system. When depositing polycrystalline silicon on an oxide covered layer, the ring may be formed as a circular trench in the oxide layer adjacent the wafer edge.

摘要翻译： 在单晶硅晶片的一个表面上并且在其边缘附近提供环。 与远离环的晶片的光吸收率相比，环增加了与环相邻的晶片的光吸收率。 因此，环在其快速热处理期间至少部分补偿晶片的边缘冷却。 因此，均匀的厚度层可以在快速热处理系统中沉积在晶片上。 当在氧化物覆盖层上沉积多晶硅时，环可以形成为邻近晶片边缘的氧化物层中的圆形沟槽。