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公开(公告)号:US07593446B2
公开(公告)日:2009-09-22
申请号:US12117053
申请日:2008-05-08
Applicant: Mathieu Carras , Alfredo De Rossi
Inventor: Mathieu Carras , Alfredo De Rossi
IPC: H01S5/00
CPC classification number: H01S5/12 , H01S5/0654 , H01S5/1218 , H01S5/1231
Abstract: The present invention relates to the field of distributed feedback semiconductor lasers. More specifically, the invention makes it possible to develop single-mode distributed feedback lasers with a production rate close to 100% using a simple and robust technology. To this end, the invention involves introducing radiative losses on just one of the two predominant modes of a DFB laser obtained by index modulation by defining a particular refractive index profile of the active area.
Abstract translation: 本发明涉及分布反馈半导体激光器领域。 更具体地,本发明使得可以使用简单和鲁棒的技术开发生产率接近100%的单模分布反馈激光器。 为此,本发明涉及通过限定有效区域的特定折射率分布,通过索引调制获得的DFB激光器的两种主要模式之一引入辐射损耗。
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公开(公告)号:US07567606B2
公开(公告)日:2009-07-28
申请号:US12117780
申请日:2008-05-09
Applicant: Mathieu Carras , Alfredo De Rossi
Inventor: Mathieu Carras , Alfredo De Rossi
IPC: H01S5/00
CPC classification number: H01S5/1228
Abstract: The present invention relates to a strong distributed feedback semiconductor laser. More specifically, the invention implements a top optical waveguide (2) for semiconductor lasers having a surface metallic grating (5) making it possible to obtain a stable and controlled distributed feedback, using a simple and robust technology. In the inventive laser, which comprises an active area (1) having an effective refractive index (neff) in which a light wave is propagated with a wavelength (λ), the top waveguide (2) is made of a weakly-doped material and the periodic grating (5) depth (p) is [ λ 4 × neff ] plus or minus 50%, the low precision needed being one of the advantages of the inventive laser.
Abstract translation: 本发明涉及强分布反馈半导体激光器。 更具体地,本发明实现了具有表面金属光栅(5)的半导体激光器的顶部光波导(2),使得可以使用简单且鲁棒的技术获得稳定和受控的分布式反馈。 在本发明的激光器中,其中包括有效折射率(neff)的有效区域(1),其中以波长(λ)传播光波,顶部波导管(2)由弱掺杂材料制成, 周期性光栅(5)深度(p)为
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