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11.发明申请公开(公告)号：US20250038060A1
公开(公告)日：2025-01-30
申请号：US18917464
申请日：2024-10-16
Applicant: STMicroelectronics S.r.l.
Inventor： Simone RASCUNA' , Claudio CHIBBARO , Alfio GUARNERA , Mario Giuseppe SAGGIO , Francesco LIZIO
Abstract: An electronic power device includes a substrate of silicon carbide (SiC) having a front surface and a rear surface which lie in a horizontal plane and are opposite to one another along a vertical axis. The substrate includes an active area, provided in which are a number of doped regions, and an edge area, which is not active, distinct from and surrounding the active area. A dielectric region is arranged above the front surface, in at least the edge area. A passivation layer is arranged above the front surface of the substrate, and is in contact with the dielectric region in the edge area. The passivation layer includes at least one anchorage region that extends through the thickness of the dielectric region at the edge area, such as to define a mechanical anchorage for the passivation layer.
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公开(公告)号：US12211772B2
公开(公告)日：2025-01-28
申请号：US17688013
申请日：2022-03-07
Applicant: STMicroelectronics S.r.l. , STMicroelectronics, Inc.
IPC: H01L23/495 , H01L21/56 , H01L23/16 , H01L23/31 , H01L23/00
Abstract: A semiconductor device, such as a Quad-Flat No-lead (QFN) package, includes a semiconductor chip arranged on a die pad of a leadframe. The leadframe has an array of electrically-conductive leads around the die pad. The leads in the array have distal ends facing away from the die pad as well as recessed portions at an upper surface of the leads. Resilient material, such as low elasticity modulus material, is present at the upper surface of the leads and filling the recessed portions. An insulating encapsulation is molded onto the semiconductor chip. The resilient material is sandwiched between the insulating encapsulation and the distal ends of the leads. This resilient material facilitates flexibility of the leads, making them suited for reliable soldering to an insulated metal substrate.
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公开(公告)号：US12210089B2
公开(公告)日：2025-01-28
申请号：US18418298
申请日：2024-01-21
Applicant: STMicroelectronics S.r.l.
Inventor： Alessandro Parisi , Andrea Cavarra , Alessandro Finocchiaro , Giuseppe Papotto , Giuseppe Palmisano
Abstract: A flash analog-to-digital converter (ADC) receives an input control signal and performs coarse tuning of a frequency of an output signal, produced between first and second nodes having an inductance coupled therebetween. The flash ADC quantizes an operating frequency range for the output signal produced between the first and second nodes as M·Δf, where M is an integer from 0 to N−1, where N is a number of intervals into which a frequency range for the output signal is divided, and where Δf is a resulting frequency step produced by the quantizing. The value of M is generated based upon the input control signal and a word controlling switches of a plurality of switched capacitance circuits associated with the first and second nodes to close ones of those switches associated with the control word to coarsely tune the frequency of the output signal.
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公开(公告)号：US20250028342A1
公开(公告)日：2025-01-23
申请号：US18907071
申请日：2024-10-04
Applicant: STMicroelectronics S.r.l.
Inventor： Alberto Cattani , Alessandro Gasparini , Stefano Ramorini
IPC: G05F1/56
Abstract: In an embodiment, a method includes: providing a voltage setpoint to a voltage converter; generating an output voltage at a voltage rail with the voltage converter based on the voltage setpoint; when the voltage setpoint is transitioning from a first voltage setpoint to a second voltage setpoint that has a lower magnitude than the first voltage setpoint, providing a first constant current to a first node coupled to a control terminal of an output transistor to turn on the output transistor, where the output transistor includes a source terminal coupled to a first terminal of a first resistor, and where a current path of the output transistor is coupled to the voltage rail; and turning off the output transistor after the output voltage reaches the target output voltage corresponding to the second voltage setpoint.
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公开(公告)号：US12206778B2
公开(公告)日：2025-01-21
申请号：US17857633
申请日：2022-07-05
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Ruggero Susella
IPC: H04L9/08
Abstract: One or more keys are derived from a master key by executing a plurality of encryption operations. A first encryption operation uses the master key to encrypt a plaintext input having a plurality of bytes. Multiple intermediate encryption operations are performed using a respective intermediate key generated by a previous encryption operation to encrypt respective plaintext inputs having a number of bytes. At least two bytes of a plaintext input have values based on a respective set of bits of a plurality of sets of bits of an initialization vector, wherein individual bits of the respective set of bits are introduced into respective individual bytes of the plaintext input and the respective set of bits has at least two bits and at most a number of bits equal to the number of bytes of the plaintext input.
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Patent Agency Ranking
16.发明授权公开(公告)号：US12204092B2
公开(公告)日：2025-01-21
申请号：US17480634
申请日：2021-09-21
Applicant: STMicroelectronics S.r.l.
Inventor： Marco Del Sarto , Alex Gritti , Amedeo Maierna , Luca Maggi
Abstract: An electronic module includes a first die of semiconductor material including a first reflector, a second die of semiconductor material including a second reflector, and a frame including a first supporting portion and a second supporting portion parallel to one another. The first and second dies are carried, respectively, by the first and second supporting portions and are respectively arranged so that the first reflector faces the second supporting portion and the second reflector faces the first supporting portion. An incoming light beam impinges upon the first reflector and is reflected on the second reflector so as to be supplied at output from the electronic module.
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17.发明申请公开(公告)号：US20250022919A1
公开(公告)日：2025-01-16
申请号：US18781808
申请日：2024-07-23
Applicant: STMicroelectronics S.r.l.
Inventor： Simone RASCUNÀ , Paolo BADALÀ , Anna BASSI , Gabriele BELLOCCHI
IPC: H01L29/16 , H01L29/66 , H01L29/872
Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.
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公开(公告)号：US12197557B2
公开(公告)日：2025-01-14
申请号：US17454231
申请日：2021-11-09
Inventor： Antonino Mondello , Stefano Catalano , Cyril Pascal
Abstract: According to one aspect, a system-on-a-chip is proposed which includes a memory storage, a computation circuit, a comparison circuit, and a validation circuit. The memory storage is configured to store an external software module. The computation circuit is configured to compute several modified software modules from the external software module and compute check values by iteration until obtaining a final check value. Each check value is computed at least from a given modified software module and a check value previously computed, starting with a predefined initial check value. The comparison circuit is configured to compare the final check value to an expected value stored in the system-on-a-chip. The validation circuit is configured to validate the external software module when the final check value is equal to the expected value.
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公开(公告)号：US12196730B2
公开(公告)日：2025-01-14
申请号：US18485072
申请日：2023-10-11
Applicant: STMICROELECTRONICS S.r.l. , STMICROELECTRONICS PTE LTD
Inventor： Malek Brahem , Hatem Majeri , Olivier Le Neel , Ravi Shankar , Enrico Rosario Alessi , Pasquale Biancolillo
Abstract: The present disclosure is directed to a gas sensor device that detects gases with large molecules (e.g., a gas with a molecular weight between 150 g/mol and 450 g/mol), such as siloxanes. The gas sensor device includes a thin film gas sensor and a bulk film gas sensor. The thin film gas sensor and the bulk film gas sensor each include a semiconductor metal oxide (SMO) film, a heater, and a temperature sensor. The SMO film of the thin film gas sensor is an thin film (e.g., between 90 nanometers and 110 nanometers thick), and the SMO film of the bulk film gas sensor is an thick film (e.g., between 5 micrometers and 20 micrometers thick). The gas sensor device detects gases with large molecules based on a variation between resistances of the SMO thin film and the SMO thick film.
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公开(公告)号：US20250015708A1
公开(公告)日：2025-01-09
申请号：US18218750
申请日：2023-07-06
Applicant: STMicroelectronics S.r.l. , Politecnico Di Milano
Inventor： Lorenzo CREMONESI , Paolo MELILLO , Alessandro GASPARINI , Massimo GHIONI , Salvatore LEVANTINO
Abstract: Disclosed herein is a DC-DC converter, including a high-side power switch coupled between an input voltage and a switched node and a low-side power switch coupled between the switched node and ground. An inductor is coupled between the switched node and an output node. An output capacitor is coupled between the output node and ground. A control circuit is configured to operate the high-side power switch in a constant charge mode of operation to vary on-time of the high-side power switch to maintain a constant amount of charge being transferred to the output capacitor during each charging cycle, independent of variation of the input voltage.
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