Abstract:
Described herein is mask design and modeling for a set of masks to be successively imaged to print a composite pattern on a substrate, such as a semiconductor wafer. Further described herein is a method of double patterning a substrate with the set of masks. Also described herein is a method of correcting a drawn pattern of one of the mask levels based on a predicted pattern contour of the other of the mask levels. Also described herein is a method of modeling a resist profile contour for a mask level in which photoresist is applied onto a inhomogeneous substrate, as well as method of predicting a resist profile of a Boolean operation of two masks.
Abstract:
This application includes techniques for applying image imbalance compensation by aperture sizing and optical proximity approximation in designing a phase mask.
Abstract:
A method for performing scanned defect inspection of a collection of contiguous areas using a specified false-alarm-rate and capture-rate within an inspection system that has characteristic seek times between inspection locations. The multi-stage method involves setting an increased false-alarm-rate for a first stage of scanning, wherein subsequent stages of scanning inspect only the detected areas of probable defects at lowered values for the false-alarm-rate. For scanning inspection operations wherein the seek time and area uncertainty is favorable, the method can substantially increase inspection throughput.