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公开(公告)号：US20110318672A1
公开(公告)日：2011-12-29
申请号：US12824037
申请日：2010-06-25
申请人： Shem Ogadhoh , Raguraman Venkatesan , Kevin J. Hooker , Sungwon Kim , Bin Hu , Vivek Singh , Bikram Baidya , Prasad Narendra Atkar , Seongtae Jeong
发明人： Shem Ogadhoh , Raguraman Venkatesan , Kevin J. Hooker , Sungwon Kim , Bin Hu , Vivek Singh , Bikram Baidya , Prasad Narendra Atkar , Seongtae Jeong
摘要： Described herein is mask design and modeling for a set of masks to be successively imaged to print a composite pattern on a substrate, such as a semiconductor wafer. Further described herein is a method of double patterning a substrate with the set of masks. Also described herein is a method of correcting a drawn pattern of one of the mask levels based on a predicted pattern contour of the other of the mask levels. Also described herein is a method of modeling a resist profile contour for a mask level in which photoresist is applied onto a inhomogeneous substrate, as well as method of predicting a resist profile of a Boolean operation of two masks.
摘要翻译： 这里描述的是要连续成像以在诸如半导体晶片的衬底上打印复合图案的一组掩模的掩模设计和建模。 本文进一步描述的是使用该组掩模对衬底进行双重图案化的方法。 这里还描述了一种基于掩模级别中的另一个的预测图案轮廓来校正掩模级中的一个的绘制图案的方法。 本文还描述了一种对光致抗蚀剂施加到非均匀衬底上的掩模级的抗蚀剂轮廓轮廓建模方法，以及预测两个掩模的布尔运算的抗蚀剂轮廓的方法。
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公开(公告)号：US08404403B2
公开(公告)日：2013-03-26
申请号：US12824037
申请日：2010-06-25
申请人： Shem Ogadhoh , Raguraman Venkatesan , Kevin J. Hooker , Sungwon Kim , Bin Hu , Vivek Singh , Bikram Baidya , Prasad Narendra Atkar , Seongtae Jeong
发明人： Shem Ogadhoh , Raguraman Venkatesan , Kevin J. Hooker , Sungwon Kim , Bin Hu , Vivek Singh , Bikram Baidya , Prasad Narendra Atkar , Seongtae Jeong
IPC分类号： G03F1/68
摘要： Described herein is mask design and modeling for a set of masks to be successively imaged to print a composite pattern on a substrate, such as a semiconductor wafer. Further described herein is a method of double patterning a substrate with the set of masks. Also described herein is a method of correcting a drawn pattern of one of the mask levels based on a predicted pattern contour of the other of the mask levels. Also described herein is a method of modeling a resist profile contour for a mask level in which photoresist is applied onto a inhomogeneous substrate, as well as method of predicting a resist profile of a Boolean operation of two masks.
摘要翻译： 这里描述的是要连续成像以在诸如半导体晶片的衬底上打印复合图案的一组掩模的掩模设计和建模。 本文进一步描述的是使用该组掩模对衬底进行双重图案化的方法。 这里还描述了一种基于掩模级别中的另一个的预测图案轮廓来校正掩模级中的一个的绘制图案的方法。 本文还描述了一种对光致抗蚀剂施加到非均匀衬底上的掩模级的抗蚀剂轮廓轮廓建模方法，以及预测两个掩模的布尔运算的抗蚀剂轮廓的方法。
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公开(公告)号：US08778605B2
公开(公告)日：2014-07-15
申请号：US13762083
申请日：2013-02-07
申请人： Shem Ogadhoh , Raguraman Venkatesan , Kevin J. Hooker , Sungwon Kim , Bin Hu , Vivek Singh , Bikram Baidya , Prasad Narendra Atkar , Seongtae Jeong
发明人： Shem Ogadhoh , Raguraman Venkatesan , Kevin J. Hooker , Sungwon Kim , Bin Hu , Vivek Singh , Bikram Baidya , Prasad Narendra Atkar , Seongtae Jeong
摘要： Described herein is mask design and modeling for a set of masks to be successively imaged to print a composite pattern on a substrate, such as a semiconductor wafer. Further described herein is a method of double patterning a substrate with the set of masks. Also described herein is a method of correcting a drawn pattern of one of the mask levels based on a predicted pattern contour of the other of the mask levels. Also described herein is a method of modeling a resist profile contour for a mask level in which photoresist is applied onto a inhomogeneous substrate, as well as method of predicting a resist profile of a Boolean operation of two masks.
摘要翻译： 这里描述的是要连续成像以在诸如半导体晶片的衬底上打印复合图案的一组掩模的掩模设计和建模。 本文进一步描述的是使用该组掩模对衬底进行双重图案化的方法。 这里还描述了一种基于掩模级别中的另一个的预测图案轮廓来校正掩模级中的一个的绘制图案的方法。 本文还描述了一种对光致抗蚀剂施加到非均匀衬底上的掩模级的抗蚀剂轮廓轮廓建模方法，以及预测两个掩模的布尔运算的抗蚀剂轮廓的方法。
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公开(公告)号：US20130149638A1
公开(公告)日：2013-06-13
申请号：US13762083
申请日：2013-02-07
申请人： Shem OGADHOH , Raguraman VENKATESAN , Kevin J. HOOKER , Sungwon KIM , Bin HU , Vivek SINGH , Bikram BAIDYA , Prasad NARENDRA ATKAR , Seongtae JEONG
发明人： Shem OGADHOH , Raguraman VENKATESAN , Kevin J. HOOKER , Sungwon KIM , Bin HU , Vivek SINGH , Bikram BAIDYA , Prasad NARENDRA ATKAR , Seongtae JEONG
摘要： Described herein is mask design and modeling for a set of masks to be successively imaged to print a composite pattern on a substrate, such as a semiconductor wafer. Further described herein is a method of double patterning a substrate with the set of masks. Also described herein is a method of correcting a drawn pattern of one of the mask levels based on a predicted pattern contour of the other of the mask levels. Also described herein is a method of modeling a resist profile contour for a mask level in which photoresist is applied onto a inhomogeneous substrate, as well as method of predicting a resist profile of a Boolean operation of two masks.
摘要翻译： 这里描述的是要连续成像以在诸如半导体晶片的衬底上打印复合图案的一组掩模的掩模设计和建模。 本文进一步描述的是使用该组掩模对衬底进行双重图案化的方法。 这里还描述了一种基于掩模级别中的另一个的预测图案轮廓来校正掩模级中的一个的绘制图案的方法。 本文还描述了一种对光致抗蚀剂施加到非均匀衬底上的掩模级的抗蚀剂轮廓轮廓建模方法，以及预测两个掩模的布尔运算的抗蚀剂轮廓的方法。
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