公开(公告)号：US5105090A

公开(公告)日：1992-04-14

申请号：US443278

申请日：1989-11-28

申请人： Toshiaki Miyajima ,  Shinji Toyoyama ,  Masayoshi Koba

发明人： Toshiaki Miyajima ,  Shinji Toyoyama ,  Masayoshi Koba

IPC分类号： H01L27/14 ,  H01L27/144 ,  H01L31/12 ,  H03K17/785

CPC分类号： H03K17/785 ,  H01L27/1443

摘要： A semiconductor device is disclosed which comprises a normally-off first MOSFET, a normally-off second MOSFET connected between the gate and source of the first MOSFET, a diode connected between the gate and source of the second MOSFET, a resistor and an optoelectric transducer array, both of which are connected in parallel with each other between the gate and drain of the second MOSFET, wherein all of the components are formed on a single semiconductor chip. Also disclosed is a semiconductor device comprising a normally-off first MOSFET, a normally-on second MOSFET connected between the gate and source of the first MOSFET, a first resistor and a diode, both of which are connected in series between the source and drain of the second MOSFET, a second resistor connected between the gate and source of the second MOSFET, an optoelectric transducer array connected between the gate of the second MOSFET and the terminal which is positioned between the first resistor and the diode, wherein all of the components are formed on a single semiconductor chip.