公开(公告)号：US07989365B2

公开(公告)日：2011-08-02

申请号：US12543245

申请日：2009-08-18

Applicant: Soonam Park ,  Soo Jeon ,  Toan Q. Tran ,  Jang-Gyoo Yang ,  Qiwei Liang ,  Dmitry Lubomirsky

Inventor： Soonam Park ,  Soo Jeon ,  Toan Q. Tran ,  Jang-Gyoo Yang ,  Qiwei Liang ,  Dmitry Lubomirsky

IPC: H01L21/316

CPC classification number: C23C16/4404 ,  C23C16/401 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  Y10S438/905

Abstract: Methods of seasoning a remote plasma system are described. The methods include the steps of flowing a silicon-containing precursor into a remote plasma region to deposit a silicon containing film on an interior surface of the remote plasma system. The methods reduce reactions with the seasoned walls during deposition processes, resulting in improved deposition rate, improved deposition uniformity and reduced defectivity during subsequent deposition.

Abstract translation: 描述了调制远程等离子体系统的方法。 这些方法包括将含硅前体流入远程等离子体区域以将含硅膜沉积在远程等离子体系统的内表面上的步骤。 该方法在沉积过程中减少了与经调节的壁的反应，从而提高了沉积速率，改善了沉积均匀性，并降低了后续沉积时的缺陷率。

公开(公告)号：US20110045676A1

公开(公告)日：2011-02-24

申请号：US12543245

申请日：2009-08-18

Applicant: Soonam Park ,  Soo Jeon ,  Toan Q. Tran ,  Jang-Gyoo Yang ,  Qiwei Liang ,  Dmitry Lubomirsky

Inventor： Soonam Park ,  Soo Jeon ,  Toan Q. Tran ,  Jang-Gyoo Yang ,  Qiwei Liang ,  Dmitry Lubomirsky

IPC: H01L21/314

CPC classification number: C23C16/4404 ,  C23C16/401 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  Y10S438/905

Abstract: Methods of seasoning a remote plasma system are described. The methods include the steps of flowing a silicon-containing precursor into a remote plasma region to deposit a silicon containing film on an interior surface of the remote plasma system. The methods reduce reactions with the seasoned walls during deposition processes, resulting in improved deposition rate, improved deposition uniformity and reduced defectivity during subsequent deposition.

Abstract translation: 描述了调制远程等离子体系统的方法。 这些方法包括将含硅前体流入远程等离子体区域以将含硅膜沉积在远程等离子体系统的内表面上的步骤。 该方法在沉积过程中减少了与经调节的壁的反应，从而提高了沉积速率，改善了沉积均匀性，并降低了后续沉积时的缺陷率。