公开(公告)号：US20190189465A1

公开(公告)日：2019-06-20

申请号：US16222005

申请日：2018-12-17

Applicant: APPLIED MATERIALS, INC.

Inventor： KEITH A. MILLER ,  BENCHERKI MEBARKI ,  JOUNG JOO LEE ,  XIANMIN TANG

IPC: H01L21/3213 ,  H01L21/285 ,  H01L21/768 ,  C23C14/56 ,  C23C14/34 ,  H01J37/34 ,  H01L21/683

CPC classification number: H01L21/32136 ,  C23C14/34 ,  C23C14/568 ,  H01J37/3402 ,  H01L21/2855 ,  H01L21/683 ,  H01L21/76804 ,  H01L21/76807 ,  H01L21/76814

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for physical vapor deposition (PVD) includes: a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; and a substrate support having a support surface to support the substrate at a non-perpendicular angle to the stream of material flux, wherein at least one of the substrate support or the linear PVD source are movable in a direction parallel to a plane of the support surface of the substrate support sufficiently to cause the stream of material flux to move completely over a surface of the substrate, when disposed on the substrate support during operation.

公开(公告)号：US20160240432A1

公开(公告)日：2016-08-18

申请号：US15019587

申请日：2016-02-09

Applicant: APPLIED MATERIALS, INC.

Inventor： RONG TAO ,  TAE HONG HA ,  XIANMIN TANG ,  JOUNG JOO LEE

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/28556 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53257

Abstract: Methods for processing a substrate include: (a) depositing a cobalt layer to a first thickness within a first plurality of features and a second plurality of features formed in a substrate, wherein each of the first plurality of features and each of the second plurality of features comprises an opening, and wherein a width of the openings of the first plurality of features is less than a width of the openings of the second plurality of features; and (b) heating the substrate to a first temperature to fill the first plurality of features with cobalt material while simultaneously depositing a fill material on the substrate to fill the second plurality of features.

Abstract translation: 用于处理衬底的方法包括：（a）在第一多个特征中形成第一厚度的钴层和在衬底中形成的第二多个特征，其中第一多个特征和第二多个特征中的每一个 特征包括开口，并且其中第一多个特征的开口的宽度小于第二多个特征的开口的宽度; 和（b）将基底加热到第一温度以用钴材料填充第一多个特征，同时在衬底上沉积填充材料以填充第二多个特征。