公开(公告)号：US20210320064A1

公开(公告)日：2021-10-14

申请号：US17356717

申请日：2021-06-24

Applicant: APPLIED MATERIALS, INC.

Inventor： SUKETU A. PARIKH ,  RONG TAO ,  ROEY SHAVIV ,  JOUNG JOO LEE ,  SESHADRI GANGULI ,  SHIRISH PETHE ,  DAVID GAGE ,  JIANSHE TANG ,  MICHAEL A STOLFI

IPC: H01L23/528 ,  H01L21/67 ,  H01L23/532 ,  H01L21/02 ,  H01L21/321 ,  H01L21/768 ,  H01L23/522

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.

公开(公告)号：US20210020569A1

公开(公告)日：2021-01-21

申请号：US16516817

申请日：2019-07-19

Applicant: APPLIED MATERIALS, INC.

Inventor： SUKETU A. PARIKH ,  RONG TAO ,  ROEY SHAVIV ,  JOUNG JOO LEE ,  SESHADRI GANGULI ,  SHIRISH PETHE ,  DAVID GAGE ,  JIANSHE TANG ,  MICHAEL A. STOLFI

IPC: H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L21/321 ,  H01L21/768 ,  H01L21/67

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1× feature and at least one wider than 1× feature; the first metal material is reflowed such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1× feature is filled with the second metal material.

公开(公告)号：US20160240432A1

公开(公告)日：2016-08-18

申请号：US15019587

申请日：2016-02-09

Applicant: APPLIED MATERIALS, INC.

Inventor： RONG TAO ,  TAE HONG HA ,  XIANMIN TANG ,  JOUNG JOO LEE

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/28556 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53257

Abstract: Methods for processing a substrate include: (a) depositing a cobalt layer to a first thickness within a first plurality of features and a second plurality of features formed in a substrate, wherein each of the first plurality of features and each of the second plurality of features comprises an opening, and wherein a width of the openings of the first plurality of features is less than a width of the openings of the second plurality of features; and (b) heating the substrate to a first temperature to fill the first plurality of features with cobalt material while simultaneously depositing a fill material on the substrate to fill the second plurality of features.

Abstract translation: 用于处理衬底的方法包括：（a）在第一多个特征中形成第一厚度的钴层和在衬底中形成的第二多个特征，其中第一多个特征和第二多个特征中的每一个 特征包括开口，并且其中第一多个特征的开口的宽度小于第二多个特征的开口的宽度; 和（b）将基底加热到第一温度以用钴材料填充第一多个特征，同时在衬底上沉积填充材料以填充第二多个特征。