公开(公告)号：US20190189465A1

公开(公告)日：2019-06-20

申请号：US16222005

申请日：2018-12-17

申请人： APPLIED MATERIALS, INC.

发明人： KEITH A. MILLER ,  BENCHERKI MEBARKI ,  JOUNG JOO LEE ,  XIANMIN TANG

IPC分类号： H01L21/3213 ,  H01L21/285 ,  H01L21/768 ,  C23C14/56 ,  C23C14/34 ,  H01J37/34 ,  H01L21/683

CPC分类号： H01L21/32136 ,  C23C14/34 ,  C23C14/568 ,  H01J37/3402 ,  H01L21/2855 ,  H01L21/683 ,  H01L21/76804 ,  H01L21/76807 ,  H01L21/76814

摘要： Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for physical vapor deposition (PVD) includes: a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; and a substrate support having a support surface to support the substrate at a non-perpendicular angle to the stream of material flux, wherein at least one of the substrate support or the linear PVD source are movable in a direction parallel to a plane of the support surface of the substrate support sufficiently to cause the stream of material flux to move completely over a surface of the substrate, when disposed on the substrate support during operation.

公开(公告)号：US20190164801A1

公开(公告)日：2019-05-30

申请号：US16264637

申请日：2019-01-31

申请人： JUSUNG ENGINEERING CO., LTD.

发明人： Ki Bum KIM ,  Seung Youb SA ,  Ram WOO ,  Myung Jin LEE ,  Seung Dae CHOI ,  Jong Sung CHOI ,  Ho Boem HER

IPC分类号： H01L21/683 ,  H01L21/687

CPC分类号： H01L21/683 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  H01L21/68792

摘要： An embodiment of a substrate treatment device may comprise: a disk provided to be able to rotate; at least one susceptor arranged on the disk, a substrate being seated on the upper surface of the susceptor, the susceptor rotating, as the disk rotates, and revolving about the center of the disk as the axis; a metal ring coupled to the lower portion of the susceptor and arranged such that the center of the metal ring coincides with the center of the susceptor, and a magnet arranged radially on the lower portion of the disk with reference to the center of the disk and provided such that at least a part of the magnet faces the metal ring in the up/down direction.

公开(公告)号：US20190088507A1

公开(公告)日：2019-03-21

申请号：US16185902

申请日：2018-11-09

申请人： THE JAPAN STEEL WORKS, LTD.

发明人： Yuki SUZUKI ,  Sadao TANIGAWA

IPC分类号： H01L21/677 ,  F16C32/06 ,  B65G49/06 ,  H01L27/146 ,  H01L21/683

CPC分类号： H01L21/677 ,  B65G49/065 ,  B65G2249/04 ,  F16C32/0614 ,  F16C32/0618 ,  F16C32/0622 ,  F16C32/0625 ,  F16C2326/58 ,  F16C2380/18 ,  H01L21/683 ,  H01L27/146

摘要： An apparatus for conveying a substrate includes a base along which the substrate is conveyed, a first upward gas ejecting section, a second upward gas ejecting section and a third upward gas ejecting section disposed over the base, the third upward gas ejecting section being disposed between the first and second upward gas ejecting sections, and a first downward gas ejecting section and a second downward gas ejecting section disposed above and facing respective portions of the third upward gas ejecting section. Gas ejected upward from the first, second and third upward gas ejecting sections floats the substrate. The substrate is subjected to pressure by gas ejected downward from the first and second downward gas ejecting sections. The first and second downward gas ejecting sections are spaced to provide a working area therebetween and through which the substrate is irradiated with a laser beam.

公开(公告)号：US20180310362A1

公开(公告)日：2018-10-25

申请号：US15736172

申请日：2016-11-29

申请人： NGK Spark Plug Co., LTD.

发明人： Atsushi TSUCHIDA

IPC分类号： H05B3/26 ,  H01L21/683 ,  H01L21/67

CPC分类号： H05B3/265 ,  C04B37/00 ,  C04B37/02 ,  C04B41/88 ,  H01L21/67103 ,  H01L21/683 ,  H01L21/6833 ,  H05B3/03 ,  H05B3/74

摘要： A ceramic member includes a voltage supply rod capable of reducing a local temperature drop of the ceramic member. The ceramic member comprises a ceramic base, a metal body disposed inside the ceramic base, and a voltage supply rod made of an electrically conductive material and having a far end portion electrically connected to the metal body. The far end portion is located at an end of the voltage supply rod in a longitudinal direction. The voltage supply rod also includes a heat-transfer reducing portion continuous with the far end portion. The heat-transfer reducing portion has thermal conductivity k2 and a cross-sectional area A2 in a cross section taken perpendicularly to the longitudinal direction. The thermal conductivity k2 and the cross-sectional area A2 satisfy a formula k2·A2

公开(公告)号：US20180166583A1

公开(公告)日：2018-06-14

申请号：US15812231

申请日：2017-11-14

申请人： Electronics and Telecommunications Research Institute

发明人： Doo-Hee CHO ,  YOUNG SAM PARK ,  Chunwon BYUN ,  Byoung Gon YU ,  Jonghee LEE ,  Hyunkoo LEE ,  Nam Sung CHO

IPC分类号： H01L29/786 ,  H01L21/683 ,  H01L51/00 ,  H01L21/288 ,  H01L51/05 ,  H01L21/02 ,  H01L51/10 ,  H01L29/423

CPC分类号： H01L29/78603 ,  H01L21/02002 ,  H01L21/02288 ,  H01L21/02532 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02628 ,  H01L21/288 ,  H01L21/683 ,  H01L21/6835 ,  H01L29/423 ,  H01L29/42356 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78636 ,  H01L29/78651 ,  H01L29/7869 ,  H01L51/0004 ,  H01L51/0021 ,  H01L51/0055 ,  H01L51/0545 ,  H01L51/10 ,  H01L2221/68318 ,  H01L2221/6835

摘要： Embodiments of the inventive concepts provide a method of fabricating a flexible substrate and the flexible substrate fabricated thereby. The method includes printing a gate catalyst pattern on a separation layer, forming a gate plating pattern on the gate catalyst pattern, forming a gate insulating layer on the gate plating pattern, printing a source catalyst pattern and a drain catalyst pattern spaced apart from each other on the gate insulating layer, and forming a source plating pattern and a drain plating pattern on the source catalyst pattern and the drain catalyst pattern, respectively.

公开(公告)号：US09997422B2

公开(公告)日：2018-06-12

申请号：US15089960

申请日：2016-04-04

申请人： Lam Research Corporation

发明人： Ishtak Karim ,  Yukinori Sakiyama ,  Yaswanth Rangineni ,  Edward Augustyniak ,  Douglas Keil ,  Ramesh Chandrasekharan ,  Adrien LaVoie ,  Karl Leeser

IPC分类号： H05H1/24 ,  H01L21/66 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/458 ,  H01L21/263 ,  H01L21/683 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02 ,  C23C16/455 ,  C23C16/509

CPC分类号： H01L22/20 ,  C23C16/45565 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/263 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67201 ,  H01L21/683 ,  H01L22/12

摘要： A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency signals of a first signal frequency are supplied to the plasma generation region to generate a plasma within the plasma generation region. Formation of a plasma instability is detected within the plasma based on supply of the radiofrequency signals of the first signal frequency. After detecting formation of the plasma instability, radiofrequency signals of a second signal frequency are supplied to the plasma generation region in lieu of the radiofrequency signals of the first signal frequency to generate the plasma. The second signal frequency is greater than the first signal frequency and is set to cause a reduction in ion energy within the plasma and a corresponding reduction in secondary electron emission from the wafer caused by ion interaction with the wafer.

公开(公告)号：US09961783B2

公开(公告)日：2018-05-01

申请号：US15642188

申请日：2017-07-05

申请人： Kateeva, Inc.

发明人： Eliyahu Vronsky ,  Karl Mathia ,  Alexander Sou-Kang Ko

IPC分类号： H01L21/67 ,  H01L21/68 ,  B05C5/02 ,  H01L23/02 ,  H01L23/28 ,  H05K3/46 ,  B05D5/12

CPC分类号： H05K3/4644 ,  B05C5/0208 ,  B05D5/12 ,  B41J2/01 ,  B41J3/407 ,  B41J13/0027 ,  B41J29/393 ,  H01L21/67 ,  H01L21/6715 ,  H01L21/6776 ,  H01L21/67784 ,  H01L21/68 ,  H01L21/683 ,  H05K3/4679 ,  H05K2203/0104 ,  H05K2203/013 ,  H05K2203/0736 ,  H05K2203/166

摘要： A printer deposits material onto a substrate as part of a manufacturing process for an electronic product; at least one transported component experiences error, which affects the deposition. This error is mitigated using transducers that equalize position of the component, e.g., to provide an “ideal” conveyance path, thereby permitting precise droplet placement notwithstanding the error. In one embodiment, an optical guide (e.g., using a laser) is used to define a desired path; sensors mounted to the component dynamically detect deviation from this path, with this deviation then being used to drive the transducers to immediately counteract the deviation. This error correction scheme can be applied to correct for more than type of transport error, for example, to correct for error in a substrate transport path, a printhead transport path and/or split-axis transport non-orthogonality.

公开(公告)号：US09869715B2

公开(公告)日：2018-01-16

申请号：US15236297

申请日：2016-08-12

申请人： Tokyo Seimitsu Co., Ltd.

发明人： Takashi Ishimoto ,  Yuji Shigesawa ,  Akira Yamaguchi ,  Takashi Motoyama ,  Takenori Takahashi

IPC分类号： G01R31/28 ,  H01L21/683 ,  G01R31/00 ,  H01L21/67 ,  H01L21/687 ,  G01R1/067 ,  H01L21/677

CPC分类号： G01R31/2875 ,  G01R1/06705 ,  G01R31/00 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/677 ,  H01L21/683 ,  H01L21/68742

摘要： The present invention provides a semiconductor wafer inspection apparatus and a semiconductor wafer inspection method that can suppress warpage in a semiconductor wafer due to a temperature difference between the mounting surface of a table and the semiconductor wafer. In a prober of the present invention, a semiconductor wafer is heated to have a second temperature which is equal to or lower than a first temperature in a preheating step using an oven, and then the semiconductor wafer is placed on a mounting surface of a table which is heated to the first temperature. Thus, because a temperature difference between the mounting surface of the table and the semiconductor wafer is reduced in the prober, it is possible to suppress warpage in the semiconductor wafer that occurs right after the semiconductor wafer is placed on the mounting surface.

公开(公告)号：US09852937B2

公开(公告)日：2017-12-26

申请号：US15509818

申请日：2015-08-20

申请人： ASML NETHERLANDS B.V.

发明人： Jeroen Gertruda Antonius Huinck

IPC分类号： G03F7/20 ,  H01L21/687 ,  H01L21/683

CPC分类号： H01L21/68742 ,  G03F7/707 ,  G03F7/70708 ,  G03F7/70716 ,  G03F7/70725 ,  G03F7/70733 ,  H01L21/683 ,  H01L21/6835 ,  H01L21/687 ,  H01L21/68714 ,  H01L21/6875 ,  H01L21/68785 ,  H01L21/68792

摘要： An object table has a lifting mechanism to displace an object from a support surface. The lifting mechanism includes one or more elongated rods extending in a direction substantially perpendicular to the support surface to support the object at a distance from the support surface, the one or more elongated rods being displaceable between positions below the support surface and protruding from the support surface. The mechanism further includes a locking mechanism configured to limit a rotation about a longitudinal axis of the one or more elongated rods. The locking mechanism includes an elastic element that is mechanically connected to both a housing of the lifting mechanism and the one or more elongated rods, the elastic element configured to have a comparatively low stiffness in the support direction and a comparatively high stiffness in a rotational direction about the longitudinal axis.

公开(公告)号：US20170338214A1

公开(公告)日：2017-11-23

申请号：US15159649

申请日：2016-05-19

申请人： ZIPTRONIX, INC.

发明人： Cyprian Emeka Uzoh ,  Arkalgud R. Sitaram ,  Paul Enquist

IPC分类号： H01L25/00 ,  H01L21/308 ,  H01L25/065 ,  H01L21/304 ,  H01L21/683 ,  H01L21/306

CPC分类号： H01L25/50 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3081 ,  H01L21/561 ,  H01L21/683 ,  H01L23/3121 ,  H01L23/3135 ,  H01L25/0657 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/351

摘要： In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.