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公开(公告)号:USD941787S1
公开(公告)日:2022-01-25
申请号:US29726488
申请日:2020-03-03
Applicant: Applied Materials, Inc.
Designer: Sultan Malik , Srinivas D. Nemani , Adib M. Khan , Qiwei Liang
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公开(公告)号:US10675581B2
公开(公告)日:2020-06-09
申请号:US16055929
申请日:2018-08-06
Applicant: Applied Materials, Inc.
Inventor: Adib Khan , Qiwei Liang , Sultan Malik , Srinivas Nemani , Rafika Smati , Joseph Ng , John O'Hehir
IPC: H01L21/673 , B01D53/047 , B01D53/04 , H01L21/67
Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.
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公开(公告)号:US10468285B2
公开(公告)日:2019-11-05
申请号:US15642977
申请日:2017-07-06
Applicant: Applied Materials, Inc.
Inventor: Toan Q. Tran , Sultan Malik , Dmitry Lubomirsky , Shambhu N. Roy , Satoru Kobayashi , Tae Seung Cho , Soonam Park , Shankar Venkataraman
IPC: H01L21/683 , H01L21/3065 , H01L21/67
Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.
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公开(公告)号:US20180033673A1
公开(公告)日:2018-02-01
申请号:US15657190
申请日:2017-07-23
Applicant: APPLIED MATERIALS, INC.
Inventor: Srinivas D. Nemani , Shambhu N. Roy , Sultan Malik , Viachslav Babayan
IPC: H01L21/687 , H01L21/67 , H01L21/02
CPC classification number: H01L21/68735 , H01L21/02274 , H01L21/67098 , H01L21/68742 , H01L21/68764 , H01L21/68785
Abstract: Embodiments of methods and apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a base having a first support surface designed to support a substrate having a given width; a plurality of arcuate slots formed through the base; a corresponding plurality of lift pins disposed through the arcuate slots, wherein the lift pins are rotationally and vertically movable with respect to the base; and a cover plate disposed on but not coupled to the base to cover the first support surface, wherein the cover plate has a diameter greater than the given width, and wherein the cover plate includes a second support surface designed to support a substrate having the given width.
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