PROCESS FOR FORMING SILICON-FILLED OPENINGS WITH A REDUCED OCCURRENCE OF VOIDS
    11.
    发明申请
    PROCESS FOR FORMING SILICON-FILLED OPENINGS WITH A REDUCED OCCURRENCE OF VOIDS 审中-公开
    形成硅填充开口的方法,减少了声音的发生

    公开(公告)号:US20160020094A1

    公开(公告)日:2016-01-21

    申请号:US14555379

    申请日:2014-11-26

    IPC分类号: H01L21/02

    摘要: In some embodiments, silicon-filled openings are formed having no or a low occurrence of voids in the silicon fill, while maintaining a smooth exposed silicon surface. In some embodiments, an opening in a substrate may be filled with silicon, such as amorphous silicon. The deposited silicon may have interior voids. This deposited silicon is then exposed to a silicon mobility inhibitor, such as an oxygen-containing species and/or a semiconductor dopant. The deposited silicon fill is subsequently annealed. After the anneal, the voids may be reduced in size and, in some embodiments, this reduction in size may occur to such an extent that the voids are eliminated.

    摘要翻译: 在一些实施例中,形成硅填充开口,其在硅填充物中没有或少量出现空隙,同时保持光滑的暴露的硅表面。 在一些实施例中,衬底中的开口可以填充有硅,例如非晶硅。 沉积的硅可能具有内部空隙。 然后将沉积的硅暴露于硅迁移率抑制剂,例如含氧物质和/或半导体掺杂剂。 沉积的硅填充物随后退火。 在退火之后,空隙的尺寸可以减小,并且在一些实施例中,尺寸的这种减小可以发生到消除空隙的程度。