公开(公告)号：US20200266057A1

公开(公告)日：2020-08-20

申请号：US16792058

申请日：2020-02-14

Applicant: ASM IP Holding B.V.

Inventor： SeungHwan Lee ,  HakYong Kwon ,  KiKang Kim ,  SungBae Kim ,  JongHyun Ahn ,  SeongRyeong Kim

IPC: H01L21/02 ,  H01L21/762 ,  C23C16/455

Abstract: A method and apparatus for depositing a material on a surface of a substrate are disclosed. The method can include a treatment step to suppress a rate of material deposition on the surface of the substrate. The method can result in higher-quality deposited material. Additionally or alternatively, the method can be used to fill a recess within the surface of the substrate with reduced or no seam formation.